SM5S10AT_V01 VISHAY | Alldatasheet

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www.vishay.com Vishay General Semiconductor Revision: 26-Oct-2021 1 Document Number: 87609 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions

FEATURES

  • Junction passivation optimized design passivated anisotropic rectifier technology
  • T J = 175 °C capability suitable for high reliability and automotive requirement
  • Available in unidirectional polarity only
  • Low leakage current
  • Low forward voltage drop
  • High surge capability
  • Meets ISO7637-2 surge specification (varied by test condition)
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AC Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode Note (1) Non-repetitive current pulse at TA = 25 °C PRIMARY CHARACTERISTICS VWM 10 V to 43 V VBR 11.1 V to 52.8 V PPPM (10 x 1000 μs) 3600 W PPPM (10 x 10 000 μs) 2800 W PD 5 W IFSM 500 A TJ max. 175 °C Polarity Unidirectional Package DO-218AC DO-218 Compatible CathodeAnode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with 10/1000 μs waveform PPPM 3600 W with 10/10 000 μs waveform 2800 Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) P D 5.0 W Peak pulse current with 10/1000 μs waveform IPPM (1) See next table A Peak forward surge current 8.3 ms single half sine-wave IFSM 500 A Operating junction and storage temperature range TJ, TSTG -55 to +175 °C

www.vishay.com Vishay General Semiconductor Revision: 26-Oct-2021 2 Document Number: 87609 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes

  • For all types maximum V F = 2.0 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (1) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) Note (1) AEC-Q101 qualified ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) MAX. PEAK PULSE CURRENT AT 10/1000 μs WAVEFORM (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) TYPICAL TEMP. COEFFICIENT OF VBR (1) αT (%/°C) MIN. NOM. MAX. THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case RθJC 1.0 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM5S10ATHE3/I (1) 2.505 I 750 13" diameter plastic tape and reel, anode towards the sprocket hole

www.vishay.com Vishay General Semiconductor Revision: 26-Oct-2021 3 Document Number: 87609 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Power Derating Curve Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 3 - Pulse Waveform Fig. 4 - Reverse Power Capability Fig. 5 - Typical Transient Thermal Impedance 2.0 4.0 6.0 8.0 0 50 100 150 200 Case Temperature (°C) Power Di ss ip ation (W 1000 500 1500 2000 2500 3000 25 50 75 100 125 150 175 Load Dump Power (W) Case Temperature (°C) 100 150 0 10 20 30 40 Input Peak Pulse Current (%) t - Time (ms) td tr = 10 μs Peak Value I PPM Half Value - I PPM IPP TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Reverse Surge Power (W) 1000 10 100 10 000 Pulse Width (ms) - ½ IPP Exponential Waveform RθJC 0.01 0.1 1 10 100 100 0.1 0.01 t - Pulse Width (s) Tran sient Thermal Impedance (°C/W) RθJA

www.vishay.com Vishay General Semiconductor Revision: 26-Oct-2021 4 Document Number: 87609 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.116 (3.0) 0.093 (2.4) 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.342 (8.7) 0.327 (8.3) 0.413 (10.5) 0.374 (9.5) 0.028 (0.7) 0.020 (0.5) 0.138 (3.5) 0.098 (2.5) Lead 1 0.098 (2.5) 0.059 (1.5)Lead 2/Metal Heatsink 0.197 (5.0) 0.185 (4.7) Mounting Pad Layout 0.413 (10.5) 0.374 (9.5) 0.091 (2.3) 0.067 (1.7) 0.116 (3.0) 0.093 (2.4) 0.150 (3.8) 0.126 (3.2) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) DO-218AC

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