SM581XWS GWSEMI | Alldatasheet

Document overview

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Technical content

Surface Mount Schottky Barrier Diode Absolute Maximum Ratings (T a = 25 O Parameter Symbol Value Unit Reverse Voltage SM5817WS SM5818WS SM5819WS V R V Average Forward Rectified Current I F(AV) 1 A Non-Repetitive Peak Forward Surge Current (t = 8.3 ms) I FSM 9 A Power Dissipation P tot 450 mW Operating Temperature Range T j - 55 to + 125 O C Storage Temperature Range T stg - 55 to + 125 O C Characteristics at T a = 25 O C Parameter Symbol Min. Max. Unit Reverse Breakdown Voltage at I R = 1 m A SM5817WS SM5818WS SM5819WS V (BR)R V Forward Voltage at I F = 1 A at I F = 3 A SM5817WS SM5818WS SM5819WS SM5817WS SM5818WS SM5819WS V F 0.45 0.55 0.6 0.75 0.875 0.9 V Reverse Voltage Leakage Current at V R = 2 0 V at V R = 30 V at V R = 4 0 V SM5817WS SM5818WS SM5819WS I R mA Total Capacitance at V R = 4 V, f = 1 MHz C tot - 120 pF Anode Cathode SL

  • -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable SM581xWS-CAR SERIES

FEATURES

Marking Code: SM5817WS: SJ SM5818:6 SK SM5819WS: SL

Plastic surface mounted package; 2 leads SOD-323 PACKAGE OUTLINE