SM581XW GWSEMI | Alldatasheet

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Plastic-Encapsulate Diodes SC HOTTKY BARRIER DIODE

FEATURES

For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol SM5817W SM5818W SM5819W Unit Non-Repetitive Peak Reverse Voltage V RM 20 30 40 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 20 30 40 V RMS Reverse Voltage V R(RMS) 14 21 28 V Average Rectified Output Current I O 1 A Peak Forward Surge Current @t=8.3ms I FSM 9 A Repetitive Peak Forward Current I FRM 1.5 A Power Dissipation Pd 500 mW Thermal Resistance Junction to Ambient R θJA 250 Storage Temperature T STG - 55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Pa rameter Symbol Test conditions M in M ax Unit Reverse breakdown voltage V (BR) I R = 1mA V Reverse voltage leakage current I R V R =20V V R =30V V R =40V mA I F =1A I F =3A 0.45 0.75 V I F =1A I F =3A 0.55 0.875 V Forward voltage V F I F =1A I F =3A 0.6 0.9 V Diode capacitance C D V R =4V, f=1MHz 120 pF ℃/W PINNING PIN DESCRIPTION

1 Cathode

2 Anode

Marking Code: SM5817W: SJ SM5818: SK Simplified outline SOD-123 and symbol SM5819W: SL 605817W 605818W 605819W 605817W 605818W 605819W 605817W 605818W 605819W

0.1 1 10 100 100 1000 0 25 50 75 100 125 150 100 200 300 400 500 600 0.01 0.1 0 5 10 15 20 25 1E-3 0.01 0.1 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics T a =10 o C T a =25 o C FORWARD CURRENT I F (A) FORWARD VOLTAGE V F (V) Reverse Characteristics T a =100 o C T a =25 o C REVERSE CURRENT I R (mA) REVERSE VOLTAGE V R (V) Typical Characteristics (SM5817W) SM581xW-SERIES

0.1 0 102 0 304 0 1E-3 0.01 0.1 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics T a T a FORWARD CURRENT I F (A) FORWARD VOLTAGE V F (V) Pulesd Pulesd Reverse Characteristics T a =100 T a =25 REVERSE CURRENT I R (mA) REVERSE VOLTAGE V R (V) Typical Characteristics (SM5818W) SM581xW-SERIES

0.1 10 20 30 40 1E-3 0.01 0.1 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Pulsed Forward Characteristics T a T a =25 FORWARD CURRENT I F (A) FORWARD VOLTAGE V F (V) T a =75 Reverse Characteristics T a =100 T a =25 REVERSE CURRENT I R (mA) REVERSE VOLTAGE V R (V) Pulsed Typical Characteristics (SM5819W) SM581xW-SERIES

Plastic surface mounted package; 2 leads SOD-123 SM581xW-SERIES