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NIPPON PRECISION CIRCUITS—1 NIPPON PRECISION CIRCUITS INC. Crystal Oscillator Module ICs OVERVIEW The SM5010 series are crystal oscillator module ICs, that incorporate oscillator and output buffer circuits. High-frequency capacitors and feedback resistors are built-in, eliminating the need for external components to make a stable fundamental-harmonic oscillator.

FEATURES

I Inverter ampliﬁer feedback resistor built-in I Capacitors C G , C D built-in I Standby function I Power-save pull-up resistor built-in (5010CL I 16 mA (V DD

4.5 V) drive capability

(5010AN , AK , BN , BK , CL , DN I 4 mA (V DD (5010AH , BH I Output three-state function I 2.7 to 5.5 V supply voltage I Oscillator frequency output (f O , f O /2, f O /4, f O determined by internal connection) I 8-pin SOP (SM5010 ××× I Chip form (CF5010 ××× SERIES CONFIGURATION Note: Recommended oper ating frequency is not the guar anteed v alue but is measured using NPC’s standard cr ystal. Version 1. Chip form devices have designation CF5010 ××× Output frequency 3V operating 5V operating R D Ω Built-in capacitance Input level (5V) Output duty level Standby functionOutput load (max) [pF] Recommended operating frequency range [MHz] Output load (max) [pF] Recommended operating frequency range [MHz] Output current [mA] C G [pF] C D [pF] SM5010AN1S f O 15 30 50 30 16 – TBD TTL CMOS No SM5010AN2S f O /2 15 30 50 30 16 – TTL CMOS/TTL No SM5010AN3S f O /4 15 30 50 30 16 – TTL CMOS/TTL No SM5010AN4S f O /8 15 30 50 30 16 – TTL CMOS/TTL No SM5010AK1S f O – – 15 30 16 – TTL TTL No SM5010AH1S f O 15 16 15 30 4 – TTL CMOS No SM5010AH2S f O / 2 15 16 15 30 4 – TTL CMOS No SM5010AH3S f O / 4 15 16 15 30 4 – TTL CMOS No SM5010AH4S f O / 8 15 16 15 30 4 – TTL CMOS No SM5010BN1S f O 15 30 50 30 16 820 TTL CMOS No SM5010BN2S f O /2 15 30 50 30 16 820 TTL CMOS/TTL No SM5010BN3S f O /4 15 30 50 30 16 820 TTL CMOS/TTL No SM5010BN4S f O /8 15 30 50 30 16 820 TTL CMOS/TTL No SM5010BK1S f O – – 15 30 16 820 TTL TTL No SM5010BH1S f O 15 16 15 30 4 820 TTL CMOS No SM5010BH2S f O / 2 15 16 15 30 4 820 TTL CMOS No SM5010BH3S f O / 4 15 16 15 30 4 820 TTL CMOS No SM5010BH4S f O / 8 15 16 15 30 4 820 TTL CMOS No SM5010CL1S f O 15 30 50 30 16 – CMOS CMOS Y es SM5010CL2S f O / 2 15 30 50 30 16 – CMOS CMOS Y es SM5010CL3S f O / 4 15 30 50 30 16 – CMOS CMOS Y es SM5010CL4S f O / 8 15 30 50 30 16 – CMOS CMOS Y es SM5010DN1S f O 15 30 50 30 16 820 TTL CMOS No

NIPPON PRECISION CIRCUITS—2

ORDERING INFORMATION

(Unit:mm) 8-pin SOP Device Package SM5010 ××× S 8-pin SOP CF5010 ××× –1 Chip form 4.4 0.2 1.5 0.1 0.05 0.05 0.4 0.2 5.2 0.3 0.4 0.1 0.15 + 0.1− 0.05 0 to 10 6.2 0.3 0.695typ 1.27 0.12 M 0.10

NIPPON PRECISION CIRCUITS—3 PAD LAYOUT (Unit: µ PINOUT (Top view) PIN DESCRIPTION and PAD DIMENSIONS BLOCK DIAGRAM Chip size: 0.92 1.18 mm Chip thic kness: 300 ± 30 µm Chip base: V DD level QVDD XT VSS(0,0) (920,1180) X Y HA5010 INH XT XT VSS Q VDD 3 NC NC XT INH Number Name I/O Description Pad dimensions [µm] XY 1I N H I Output state control input. High impedance when LOW. In the case of the 5010CL , the oscillator stops and Pow er-saving pull-up resistor bu ilt in. 195 174.4 2 XT I Ampliﬁer input. Crystal oscillator connection pins. Crystal oscillator connected betw een XT and XT 385 174.4 3X T O Ampliﬁer output. 575 174.4 4 VSS – Ground 765 174.4 5 Q O Output. Output frequency (f O , f O /2, f O /4, f O /8) deter mined by inter nal connection 757.6 1017.6

6 NC – No connection ––

7 NC – No connection ––

8 VDD – Supply v oltage 165.4 1014.6 XT VSSVDD Q CG CD Rf XT INH 1/2 1/2 1/2RD

NIPPON PRECISION CIRCUITS—4 SPECIFICATIONS Absolute Maximum Ratings V SS = 0 V Recommended Operating Conditions 3V operation V SS = 0 V 5V operation V SS = 0 V Parameter Symbol Condition Rating Unit Supply v oltage r ange V DD 0.5 to 7.0 V Input voltage r ange V IN 0.5 to V DD + 0.5 V Output v oltage r ange V OUT 0.5 to V DD + 0.5 V Operating temper ature r ange T opr 40 to 85 C Storage temper ature r ange T stg Chip form 65 to 150 C 8-pin SOP 55 to 125 Output current I OUT 5010 H mA 5010 N K , CL Pow er dissipation P D 8-pin SOP 500 m W Soldering temper ature T sld 8-pin SOP 255 C Solder ing time t sld 8-pin SOP 10 s Parameter Symbol S eries Condition Rating Unit min typ max Supply v oltage V DD N f

30 MHz, C

L 15 pF 2.7 – 3.6 V H f

16 MHz, C

L 15 pF 2.7 – 3.6 CL f L 15 pF 2.7 – 3.6 Input v oltage V IN N f L 15 pF V SS DD V H ≤ f ≤ 16 MHz, C L ≤ 15 pF V SS –V DD CL × 2 ≤ f ≤ 30 MHz, C L ≤ 15 pF V SS –V DD Operating temperature T OPR ×N × 2 ≤ f ≤ 30 MHz, C L ≤ 15 pF − 10 – + 70 °C×H × 2 ≤ f ≤ 16 MHz, C L ≤ 15 pF − 10 – + 70 CL × 2 ≤ f ≤ 30 MHz, C L ≤ 15 pF − 20 – + 80 Parameter Symbol S eries Condition Rating Unit min typ max Supply v oltage V DD ×N × 2 ≤ f ≤ 30 MHz, C L ≤ 50 pF 4.5 – 5.5 V ×K × 2 ≤ f ≤ 30 MHz, C L ≤ 15 pF 4.5 – 5.5 ×H × 2 ≤ f ≤ 30 MHz, C L ≤ 15 pF 4.5 – 5.5 CL × 2 ≤ f ≤ 30 MHz, C L ≤ 50 pF 4.5 – 5.5 Input v oltage V IN ×N × 2 ≤ f ≤ 30 MHz, C L ≤ 50 pF V SS –V DD V ×K × 2 ≤ f ≤ 30 MHz, C L ≤ 15 pF V SS –V DD ×H × 2 ≤ f ≤ 30 MHz, C L ≤ 15 pF V SS –V DD CL × 2 ≤ f ≤ 30 MHz, C L ≤ 50 pF V SS –V DD Operating temperature T OPR ×N × 2 ≤ f ≤ 30 MHz, C L ≤ 50 pF − 40 – + 85 ×K × 2 ≤ f ≤ 30 MHz, C L ≤ 15 pF − 40 – + 85 ×H × 2 ≤ f ≤ 30 MHz, C L ≤ 15 pF − 40 – + 85 CL × 2 ≤ f ≤ 30 MHz, C L ≤ 50 pF − 40 – + 85

NIPPON PRECISION CIRCUITS—5

Electrical Characteristics

5010×N× series 3 V operation: VDD = 2.7 to 3.6 V , VSS = 0 V , Ta = −10 to 70 °C unless otherwise noted. 5010×N×, ×K× series 5 V operation: VDD = 4.5 to 5.5 V , VSS = 0 V , Ta = −40 to 85 °C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output v oltage V OH Q: Measurement cct 1, V DD = 2.7 V, I OH = 8 m A 2.1 2.4 – V LOW -level output v oltage V OL Q: Measurement cct 2, V DD = 2.7 V, I OL = 8 m A – 0.3 0.4 V Output leakage current I Z Q: Measurement cct 2, INH = LOW , V DD = 3.6 V, V OH = V DD –– 1 0 µA Q: Measurement cct 2, INH = LOW , V DD = 3.6 V, V OL = V SS –– 1 0 HIGH-level input v oltage V IH INH 2.0 – – V LOW -level input v oltage V IL INH – – 0.5 V Current consumption I DD Measurement cct 3, load cct 1, INH = open, C L = 15 pF, f = 30 MHz 5010 ×N1 TBD mA 5010 ×N2 5010 ×N3 5010 ×N4 INH pull-up resistance R UP1 Measurement cct 4 – 100 – k Ω Feedback resistance R f Measurement cct 5 – 200 – k Ω Oscillator ampliﬁer output resistance R D Design value 5010B ×× – 820 – Ω Built-in capacitance C G Design value, deter mined by the internal w afer pattern 5010A ××, 5010B ×× TBD pF C D pF Parameter Symbol Condition Rating Unit min typ max HIGH-level output v oltage V OH Q: Measurement cct 1, V DD = 4.5 V, I OH = 16 m A 3.9 4.2 – V LOW -level output v oltage V OL Q: Measurement cct 2, V DD = 4.5 V, I OL = 16 m A – 0.3 0.4 V Output leakage current I Z Q: Measurement cct 2, INH = LOW , V DD = 5.5 V, V OH = V DD –– 1 0 µA Q: Measurement cct 2, INH = LOW , V DD = 5.5 V, V OL = V SS –– 1 0 HIGH-level input v oltage V IH INH 2.0 – – V LOW -level input v oltage V IL INH – – 0.8 V Current consumption I DD Measurement cct 3, load cct 2, INH = open, C L = 50 pF, f = 30 MHz 5010 ×N1 TBD mA 5010 ×N2 5010 ×N3 5010 ×N4 Measurement cct 3, load cct 1, INH = open, C L = 15 pF, f = 30 MHz 5010 ×K × INH pull-up resistance R UP1 Measurement cct 4 – 100 – k Ω Feedback resistance R f Measurement cct 5 – 200 – k Ω Oscillator ampliﬁer output resistance R D Design value 5010B ×× – 820 – Ω Built-in capacitance C G Design value, deter mined by the internal w afer pattern 5010A ××, 5010B ×× TBD pF C D pF

NIPPON PRECISION CIRCUITS—6 5010×H× series 3 V operation: VDD = 2.7 to 3.6 V , VSS = 0 V , Ta = −10 to 70 °C unless otherwise noted. 5 V operation: VDD = 4.5 to 5.5 V , VSS = 0 V , Ta = −40 to 85 °C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output v oltage V OH Q: Measurement cct 1, V DD = 2.7 V, I OH = 2 m A 2.1 2.4 – V LOW -level output v oltage V OL Q: Measurement cct 2, V DD = 2.7 V, I OL = 2 m A – 0.3 0.5 V Output leakage current I Z Q: Measurement cct 2, INH = LOW , V DD = 3.6 V, V OH = V DD –– 1 0 µA Q: Measurement cct 2, INH = LOW , V DD = 3.6 V, V OL = V SS –– 1 0 HIGH-level input v oltage V IH INH 2.0 – – V LOW -level input v oltage V IL INH – – 0.5 V Current consumption I DD Measurement cct 3, load cct 2, INH = open, C L = 15 pF, f = 16 MHz 5010 ×H1 TBD mA 5010 ×H2 5010 ×H3 5010 ×H4 INH pull-up resistance R UP1 Measurement cct 4 – 100 – k Ω Feedback resistance R f Measurement cct 5 – 200 – k Ω Oscillator ampliﬁer output resistance R D Design value 5010B ×× – 820 – Ω Built-in capacitance C G Design value, deter mined by the internal w afer pattern 5010A ××, 5010B ×× TBD pF C D pF Parameter Symbol Condition Rating Unit min typ max HIGH-level output v oltage V OH Q: Measurement cct 1, V DD = 4.5 V, I OH = 4 m A 3.9 4.2 – V LOW -level output v oltage V OL Q: Measurement cct 2, V DD = 4.5 V, I OL = 4 m A – 0.3 0.5 V Output leakage current I Z Q: Measurement cct 2, INH = LOW , V DD = 5.5 V, V OH = V DD –– 1 0 µA Q: Measurement cct 2, INH = LOW , V DD = 5.5 V, V OL = V SS –– 1 0 HIGH-level input v oltage V IH INH 2.0 – – V LOW -level input v oltage V IL INH – – 0.8 V Current consumption I DD Measurement cct 3, load cct 2, INH = open, C L = 15 pF, f = 30 MHz 5010 ×H1 TBD mA 5010 ×H2 5010 ×H3 5010 ×H4 INH pull-up resistance R UP1 Measurement cct 4 – 100 – k Ω Feedback resistance R f Measurement cct 5 – 200 – k Ω Oscillator ampliﬁer output resistance R D Design value 5010B ×× – 820 – Ω Built-in capacitance C G Design value, deter mined by the internal w afer pattern 5010A ××, 5010B ×× TBD pF C D pF

NIPPON PRECISION CIRCUITS—7 5010CL× series 3 V operation: VDD = 2.7 to 3.6 V , VSS = 0 V , Ta = −20 to 80 °C unless otherwise noted. 5 V operation: VDD = 4.5 to 5.5 V , VSS = 0 V , Ta = −40 to 85 °C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output v oltage V OH Q: Measurement cct 1, V DD = 2.7 V, I OH = 8 m A 2.2 2.4 – V LOW -level output v oltage V OL Q: Measurement cct 2, V DD = 2.7 V, I OL = 8 m A – 0.3 0.4 V Output leakage current I Z Q: Measurement cct 2, INH = LOW , V DD = 3.6 V, V OH = V DD –– 1 0 µA Q: Measurement cct 2, INH = LOW , V DD = 3.6 V, V OL = V SS –– 1 0 HIGH-level input v oltage V IH INH 0.7V DD V LOW -level input v oltage V IL INH 0.3V DD V Current consumption I DD Measurement cct 3, load cct 2, INH = open, C L = 15 pF, f = 30 MHz 5010CL1 TBD mA 5010CL2 5010CL3 5010CL4 INH pull-up resistance R UP1 Measurement cct 4 – 100 – k Ω R UP2 TBD M Ω Feedback resistance R f Measurement cct 5 – 200 – k Ω Built-in capacitance C G Design value, deter mined by the inter nal wafer pattern TBD pF C D pF Parameter Symbol Condition Rating Unit min typ max HIGH-level output v oltage V OH Q: Measurement cct 1, V DD = 4.5 V, I OH = 16 m A 4.0 4.2 – V LOW -level output v oltage V OL Q: Measurement cct 2, V DD = 4.5 V, I OL = 16 m A – 0.3 0.4 V Output leakage current I Z Q: Measurement cct 2, INH = LOW , V DD = 5.5 V, V OH = V DD –– 1 0 µA Q: Measurement cct 2, INH = LOW , V DD = 5.5 V, V OL = V SS –– 1 0 HIGH-level input v oltage V IH INH 0.7V DD V LOW -level input v oltage V IL INH 0.3V DD V Current consumption I DD Measurement cct 3, load cct 2, INH = open, C L = 50 pF, f = 30 MHz 5010CL1 TBD mA 5010CL2 5010CL3 5010CL4 INH pull-up resistance R UP1 Measurement cct 4 – 100 – k Ω R UP2 TBD M Ω Feedback resistance R f Measurement cct 5 – 200 – k Ω Built-in capacitance C G Design value, deter mined by the inter nal wafer pattern TBD pF C D pF

NIPPON PRECISION CIRCUITS—8 Switching Characteristics 5010×N× series 3 V operation: VDD = 2.7 to 3.6 V , VSS = 0 V , Ta = −10 to 70 °C unless otherwise noted. 5010×N×, ×K× series 5 V operation (5010×N×): VDD = 4.5 to 5.5 V , VSS = 0 V , Ta = −40 to 85 °C unless otherwise noted. 5 V operation (5010AN2, AN3, AN4, BN2, BN3, BN4, ×K×): VDD = 4.5 to 5.5 V , VSS = 0 V , Ta = −40 to 85 °C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time t r1 Measurement cct 6, load cct 2, C L = 15 pF, 0.1V DD to 0.9V DD – 3.0 6.0 ns Output f all time t f1 Measurement cct 6, load cct 2, C L = 15 pF, 0.9V DD to 0.1V DD – 3.0 6.0 ns Output duty cycle 1 1. Determined by the lot monitor. Duty Measurement cct 6, load cct 2, V DD = 3.0 V, Ta = 25 °C, C L = 15 pF, f = 30MHz 4 0–6 0 % Output disable delay time t PLZ Measurement cct 7, load cct 2, V DD = 3.0 V, Ta = 25 °C, C L = 15 pF – – 100 ns Output enable delay time t PZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr2 Measurement cct 6, load cct 2, 0.1V DD to 0.9V DD C L = 15 pF – 2.0 4.0 ns tr3 C L = 50 pF – 4.0 8.0 Output f all time tf2 Measurement cct 6, load cct 2, 0.9V DD to 0.1V DD C L = 15 pF – 2.0 4.0 ns tf3 C L = 50 pF – 4.0 8.0 Output duty cycle 1 1. Determined by the lot monitor. Duty Measurement cct 6, load cct 2, V DD = 5.0 V, Ta = 25 °C, C L = 50 pF, f = 30MHz 4 5–5 5 % Output disable delay time t PLZ Measurement cct 7, load cct 2, V DD = 5.0 V, Ta = 25 °C, C L = 15 pF – – 100 ns Output enable delay time t PZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time t r4 Measurement cct 6, load cct 1, C L = 15 pF, 0.4V to 2.4V – 1.5 3.0 ns Output f all time t f4 Measurement cct 6, load cct 1, C L = 15 pF, 2.4V to 0.4V – 1.5 3.0 ns Output duty cycle 1 1. Determined by the lot monitor. Duty Measurement cct 6, load cct 1, V DD = 5.0 V, Ta = 25 °C, C L = 15 pF, f = 30MHz 4 5–5 5 % Output disable delay time t PLZ Measurement cct 7, load cct 1, V DD = 5.0 V, Ta = 25 °C, C L = 15 pF – – 100 ns Output enable delay time t PZL – – 100 ns

NIPPON PRECISION CIRCUITS—9 5010×H× series 3 V operation: VDD = 2.7 to 3.6 V , VSS = 0 V , Ta = −10 to 70 °C unless otherwise noted. 5 V operation: VDD = 4.5 to 5.5 V , VSS = 0 V , Ta = −40 to 85 °C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time t r1 Measurement cct 6, load cct 2, C L = 15 pF, 0.1V DD to 0.9V DD –1 5 3 0 n s Output f all time t f1 Measurement cct 6, load cct 2, C L = 15 pF, 0.9V DD to 0.1V DD –1 5 3 0 n s Output duty cycle 1 1. Determined by the lot monitor. Duty Measurement cct 6, load cct 2, V DD = 3.0 V, Ta = 25 °C, C L = 15 pF, f = 16MHz 4 0–6 0 % Output disable delay time t PLZ Measurement cct 7, load cct 2, V DD = 3.0 V, Ta = 25 °C, C L = 15 pF – – 100 ns Output enable delay time t PZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr2 Measurement cct 6, load cct 2, 0.1V DD to 0.9V DD C L = 15 pF – 5 10 ns tr3 C L = 50 pF – 13 26 Output f all time tf2 Measurement cct 6, load cct 2, 0.9V DD to 0.1V DD C L = 15 pF – 5 10 ns tf3 C L = 50 pF – 13 26 Output duty cycle 1 1. Determined by the lot monitor. Duty Measurement cct 6, load cct 2, V DD = 5.0 V, Ta = 25 °C, C L = 15 pF, f = 30MHz 4 5–5 5 % Output disable delay time t PLZ Measurement cct 7, load cct 2, V DD = 5.0 V, Ta = 25 °C, C L = 15 pF – – 100 ns Output enable delay time t PZL – – 100 ns

NIPPON PRECISION CIRCUITS—10 5010CL× series 3 V operation: VDD = 2.7 to 3.6 V , VSS = 0 V , Ta = −20 to 80 °C unless otherwise noted. 5 V operation: VDD = 4.5 to 5.5 V , VSS = 0 V , Ta = −40 to 85 °C unless otherwise noted. Current consumption and Output waveform with NPC’s standard crystal Parameter Symbol Condition Rating Unit min typ max Output rise time tr2 Measurement cct 6, load cct 2, 0.1V DD to 0.9V DD C L = 15 pF – 2.0 4.0 ns tr4 C L = 30 pF – 3.0 6.0 Output f all time tf2 Measurement cct 6, load cct 2, 0.9V DD to 0.1V DD C L = 15 pF – 2.0 4.0 ns tf4 C L = 30 pF – 3.0 6.0 Output duty cycle 1 1. Determined by the lot monitor. Duty Measurement cct 6, load cct 2, V DD = 3.0 V, Ta = 25 °C, C L = 15 pF, f = 30MHz 4 5–5 5 % Output disable delay time 2 2. Oscillator stop function is bu ilt-in. When INH goes LOW , normal output stops. W hen INH goes HIGH, normal output is not r esumed until after the oscillator star t-up time has elapsed. tPLZ Measurement cct 7, load cct 2, V DD = 3.0 V, Ta = 25 °C, C L = 15 pF – – 100 ns Output enable delay time 2 tPZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr2 Measurement cct 6, load cct 2, 0.1V DD to 0.9V DD C L = 15 pF – 1.5 3.0 ns tr3 C L = 50 pF – 4.0 8.0 Output f all time tf2 Measurement cct 6, load cct 2, 0.9V DD to 0.1V DD C L = 15 pF – 1.5 3.0 ns tf3 C L = 50 pF – 4.0 8.0 Output duty cycle 1 1. Determined by the lot monitor. Duty Measurement cct 6, load cct 2, V DD = 5.0 V, Ta = 25 °C, C L = 50 pF, f = 30MHz 4 0–6 0 % Output disable delay time 2 2. Oscillator stop function is bu ilt-in. When INH goes LOW , normal output stops. When INH goes HIGH, normal output is not res umed until after the oscillator star t-up time has elapsed. tPLZ Measurement cct 7, load cct 2, V DD = 5.0 V, Ta = 25 °C, C L = 15 pF – – 100 ns Output enable delay time 2 tPZL – – 100 ns f (MHz) R ( Ω) L (mH) Ca (fF) Cb (pF) 30 17.2 4.36 6.46 2.26 L Ca R Cb

NIPPON PRECISION CIRCUITS—11 FUNCTIONAL DESCRIPTION Standby Function AH, AK, AN, BH, BK, BN, DN series When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop. CL series When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance. Power-save Pull-up Resistance (CL series only) The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby. Version INH Q Oscillator AH, AK, AN, BH, BK, BN, DN series HIGH (or open) Any f O , fO /2, f O /4 or f O /8 output frequency Normal oper ation LOW High impedance Normal oper ation CL series HIGH (or open) Any f O , fO /2, f O /4 or f O /8 output frequency Normal oper ation LOW High impedance Stopped

NIPPON PRECISION CIRCUITS—12 MEASUREMENT CIRCUITS Measurement cct 1 2.0V P −P , 10MHz sine wave input signal (3V operation) 3.5V P −P , 10MHz sine wave input signal (5V operation) C1 : 0.001 µF R1 : 50 Ω R2 : 263 Ω (5010 ×N ×, ×K ×/ 3V oper ation) 245 Ω (5010 ×N ×, ×K ×/ 5V oper ation) 1050 Ω (5010 ×H ×/ 3V oper ation) 975 Ω (5010 ×H ×/ 5V oper ation) 275 Ω (5010CL ×/ 3V oper ation) 250 Ω (5010CL ×/ 5V oper ation) Measurement cct 2 Measurement cct 3 2.0V P −P , 30MHz sine wave input signal (3V operation) 3.5V P −P , 30MHz sine wave input signal (5V operation) C1 : 0.001 µF R1 : 50 Ω Signal Generator VDD VSS XT Q R1 R2 VOH Q output VDD VSS Q IZ, IOL VOH VOL V A IZ INH Signal Generator VDD VSS XT Q IDDA Measurement cct 4 Measurement cct 5 Measurement cct 6 Measurement cct 7 R1 : 50 Ω VDD VSS IPRA 3.0V or 5.0V INH V VIH VIL VDD IPR (VIL = 0V) RUP2 = IPR (VIH = 0.7VDD)VDD VIH RUP1 = VDD VSS IRf Rf = XT VDD IRf XT A VDD VSS XT QX'tal XT INH IDD ISTA Signal Generator VSS XT Q VDD INH

NIPPON PRECISION CIRCUITS—13 Load cct 1 Load cct 2 Switching Time Measurement Waveform Output duty level (CMOS) Output duty level (TTL) Output duty cycle (CMOS) Output duty cycle (TTL) C L = 15pF : DUTY , I DD , tr , tf R = 400 Ω Q output (Including probe capacitance) R CL C L = 15pF : DUTY , I DD , tr1 , tf1 , tr2 , tf2 , tr4 , tf4 C L = 30pF : t r4 , tf4 C L = 50pF : t r3 , tf3 Q output CL (Including probe capacitance) 0.9VDD 0.1VDD 0.9VDD 0.1VDD tr tf Q output DUTY measurement voltage (0.5VDD) TW 2.4V 0.4V 2.4V 0.4V tr tf Q output DUTY measurement voltage (1.4V) TW DUTY measurement voltage (0.5VDD)Q output TW T DUTY= TW/ T 100 (%) DUTY measurement voltage (1.4V) Q output TW T DUTY= TW/ T 100 (%)

NIPPON PRECISION CIRCUITS—14 NP0015AE 2000.10 NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility fo r the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infr ingement. Applications for any devices shown in this data sheet are for illustr ation only and Nippon Precision Circuits Inc. makes no claim or warranty that such applications will be suitable for the use speciﬁed without further testing o r modiﬁcation. The products described in this data sheet are not intended to use for the apparatus which inﬂ uence human lives due to the failure or malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinaft er, including compliance with export controls on the distribution or dissemination of the products. Customers shall not e xport, directly or indirectly, any products without ﬁrst obtaining required licenses and approv als from appropriate gover nment agencies. NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome Koto-ku, Tokyo 135-8430, J apan Telephone: +81-3-3642-6661 Facsimile: +81-3-3642-6698 http://www.npc.co .jp/ Email: sales @ npc.co.jp NIPPON PRECISION CIRCUITS INC. Output Enable/Disable Delay Note (CL series only) : when the device is in standby, the oscillator stops. When standby is released, the oscil- lator starts and stable oscillator output occurs after a short delay. Q output INH VIH VIL tPLZ tPZL INH input waveform tr = tf 10ns

Product Information

SM5010AH4S specifications and overview.

Summary

Crystal Oscillator Module ICs

Description

Crystal Oscillator Module ICs

Source title SM5010AH4S Datasheet(PDF) - Nippon Precision Circuits Inc

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