SM320AF AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com SM320AF~SM3200AF SCHOTTKY DIODES REVERSE VOL TAGE 20V TO 200V FORWARD CURRENT 3.0A REV1.0 - APR 2015 RELEASED - - 1 - DESCRIPTION FEATURES The SM320AF~SM3200AF is available in SMAF package Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection
applications
Available in SMAF package
ORDERING INFORMATION
Note 3,000pcs/Reel AiT provides all RoHS Compliant Products MECHANICAL DATA Case: SMAF Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight:27mg 0.00086oz PIN DESCRIPTION 1. CATHODE 2. ANODE
AiT Semiconductor Inc. www.ait-ic.com SM320AF~SM3200AF SCHOTTKY DIODES REVERSE VOL TAGE 20V TO 200V FORWARD CURRENT 3.0A REV1.0 - APR 2015 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbol SM 320AF SM 340AF SM 360AF SM 380AF SM 3100AF SM 3120AF SM 3150AF SM 3200AF Unit Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS Voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current IF(AV) 3.0 A Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 80 70 A Max Instantaneous Forward Voltage at 3A VF 0.55 0.70 0.85 0.95 V Maximum DC Reverse Current at Rated DC Reverse Voltage TA=25°C TA=100°C IR 0.5 0.3 5.0 mA Typical Junction Capacitance NOTE1 CJ 250 160 pF Typical Thermal ResistanceNOTE2 RθJA 40 °C/W Operating Junction Temperature Range TJ -55 ~125 °C Storage Temperature Range TSTG -55 ~150 °C NOTE1: Measured at 1MHz and applied reverse voltage of 4V D.C.
AiT Semiconductor Inc. www.ait-ic.com SM320AF~SM3200AF SCHOTTKY DIODES REVERSE VOL TAGE 20V TO 200V FORWARD CURRENT 3.0A REV1.0 - APR 2015 RELEASED - - 3 - TYPICAL CHARACTERISTICS Figure. 1 Forward Current Derating Curve Figure. 2 Typical Reverse Characteristics Figure. 3 Typical Forward Characteristic Figure. 4 Typical Junction Capacitance Figure. 5 Maximum Non-Repetitive Peak Forward Surge Current Figure. 6 Typical Transient Thermal Impedance
AiT Semiconductor Inc. www.ait-ic.com SM320AF~SM3200AF SCHOTTKY DIODES REVERSE VOL TAGE 20V TO 200V FORWARD CURRENT 3.0A REV1.0 - APR 2015 RELEASED - - 4 -
PACKAGE INFORMATION
Dimension in SMAF (Unit: mm) Plastic surface mounted package; 2 leads The recommended mounting pad size UNIT A B C E e g HE ∠ mm mil Max 51 9.1 146 106 63 51 193 Min 43 7.1 130 94 51 39 173
AiT Semiconductor Inc. www.ait-ic.com SM320AF~SM3200AF SCHOTTKY DIODES REVERSE VOL TAGE 20V TO 200V FORWARD CURRENT 3.0A REV1.0 - APR 2015 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to ob tain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or s ervere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desi gn or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.