SM0502 MICROSEMI | Alldatasheet
Document overview
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Technical content
Microsemi – Lowell 75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600 CERAMIC MELF PIN DIODES
- Magnetic/Non-Magnetic“Cer-Met” (MELF) Packages
- Very Low Inductance, Full Faced Bonding
- Hermetic, Low Loss and Low Distortion
Applications
- High Volume Manufacturing Capability
- 100% TX Screening Available
DESCRIPTION
This new line of ‘MELF’ high power PIN diodes are hermetically sealed surface mount packaged devices with full face bonded chips for low inductance construction. The MELF ceramic package has square end terminations which are ideal for surface mount and pick and place operations. The PIN diode chips are coated with a special hard glass passivation which is required for high power applications to enhance the reliability resulting in MTBF’s of greater than one million hours. These MELF diodes are used as switching, attenuating and phase shifting elements from HF through 2 GHz and have breakdown voltage ratings up to 700 volts. Non-magnetic “Cer-Met” (MEL F’s) are also used as switching elements in MRI (magnetic resonance imaging) applications. Conventional magnetic MELF packages are used in cellular, beam steering applications, filter switch banks, and antenna tuning units..
Microsemi – Lowell 75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600 CERAMIC MELF ELECTRICAL SPECIFICATION AT 25°C PART NO. CASE STYLE SUGGESTED VOLTAGE RATING IR < 10µa VR TOTAL CAPACITANCE F = 1 MHz VR=50V pF (MAX) SERIES RESISTANCE If=100mA F=100MHz OHM (MAX) SERIES RESISTANCE If=200mA F=100MHz OHM (TYP) CARRIER LIFETIME If=10mA µSEC (TYP) TYPICAL THERMAL RESISTANCE °C/W SM0502 M1 500 0.50 0.70 0.55 1.0 35 SM0504 M1 500 0.60 0.60 0.45 1.5 20 SM0508 M1 500 0.90 0.40 0.25 2.0 15 SM0509 M1 500 1.20 0.35 0.20 2.5 15 SM0511 M1 500 1.25 0.30 0.15 3.0 15 SM0512 M1 500 1.50 0.25 0.12 3.5 15 SM0812 M1 700 1.30 0.40 0.25 4.0 15 SM1001 M1 700 1.30 0.35 0.20 4.5 15 SM1002 M1 50 1.20 . 75 @50mA 0.20 4.0 15 SM1003 M1 35 1.2 @ 20V .50 @ 10mA 0.10 0.6 25 ABSOLUTE MAXIMUM RATINGS AT 25°C Peak Inverse Voltage (PIV): Same as VB Forward Current (IF) : 1 A M P ( 1µS Pulse) Power Dissipation (PD): JC MAXJ MAX J T θβ Junction Temp. (Operating): -5 5°C to +150°C Storage Temp. (Non-Operating): -5 5°C to +150°C TOC Case style M2 available as special option / some limitations apply / consult factory for details. M1 M2 INCHES INCHES DIM MIN MAX MIN MAX A 0.080 0.095 0.100 0.120 B 0.115 0.135 0.188 0.205 C 0.008 0.030 0.008 0.030 Non-magnetic packages are available upon request.