SM05 SAMYANG | Alldatasheet
Document overview
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Technical content
Features
- For Sensitive ESD Protection
- Excellent Clamping Capability
- Low Leakage
- Fast Response, Response Time Less than 1ns
- Moisture Sensitivity Level 1
- Epoxy Meets UL 94 V-0 Flammability Rating
- Halogen Free. “Green” Device (Note 1)
- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Internal Structure MCC Part Number Device Marking SM05 5M ±15KV ±8KV JESD22-A114-B(ESD) 16KV SM12 12M IEC61000-4-2(ESD) Parameter Limits Peak Pulse Power (8/20us) 300W 1 2 SOT-23 0.079 2.000 inches mm 0.031 0.800 0.035 0.900 0.037 0.950 0.037 0.950 A C B D EF G H J K L Suggested Solder Pad Layout MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0. 083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.03 0.041 0.8 5 1.05 E 0.0 0.08 1.70 2.10 F 0. 018 0.024 0.45 0.60 G 0.000 0.00 0.01 0.1 5 H 0. 035 0.04 0.90 1.10 J 0. 003 0.007 0.0 8 0.18 K 0.012 0. 020 0.30 0. 51 DIMENSIONS DIM INCHES MM NOTE L 0. 020 0.500.00 0.20 Note: 1. <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. SM05 --- SM12SAMYANG ELECTRONICS SAM Y ANG ESD PROTECTION www.diode.co.kr All d ata sheet.com
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VVC V BR VRWM IPP IT IR VF IF Symbol Parameter VRWM Peak Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP PPP Peak Pulse Power CJ Junction Capacitance IF t n e r r u C d r a w r o F VF Forward Voltage @ IF Symbol Min. Typ. Max. Units VRWM 5 V VBR 6.2 7.3 V IR 10 μA VF 0.9 V IPP 12 A VC 9.8 V CJ 110 pF Symbol Min. Typ. Max. Units VRWM 12 V VBR 13.3 15.75 V IR 1 μA VF 0.9 V IPP 11.2 A VC 19 V CJ 60 pF IPP=1A, tP=8/20μs Reverse Breakdown Voltage Peak Pulse Current tP=8/20μs Conditions Reverse Working Voltage Parameter Electrical Characteristics @ 25°C (Unless Otherwise Specified) SM05 Reverse Leakage Current VRWM =5V Forward Voltage IF = 10mA Junction Capacitance VR = 0V, f = 1MHz, Pin 1 to Pin 3 IT = 1mA Clamping Voltage Clamping Voltage IPP=1A, tP=8/20μs Junction Capacitance VR = 0V, f = 1MHz, Pin 1 to Pin 3 Reverse Leakage Current VRWM =12V Forward Voltage IF = 10mA Peak Pulse Current tP=8/20μs Reverse Breakdown Voltage IT = 1mA Parameter Conditions Reverse Working Voltage SM12 SM05 --- SM12SAMYANG ELECTRONICS SAM Y ANG www.diode.co.kr All d ata sheet.com
Half value IRSM @ 20 s Peak value IRSM @ 8 s Percent of Peak Pulse Current (%) Time ( s) Fig. 1 - 8 X 20 s Pulse Waveform Pulse width(tP) is defined as that point where the peak current decay=8 s 0 25 125 150 100 120 Percent of Rated Power (%) 50 75 100 Ambient Temperature (°C) Fig. 2 - Pulse Derating Curve SM05 --- SM12SAMYANG ELECTRONICS SAM Y ANG www.diode.co.kr All d ata sheet.com