SMXX-02HTG UMW | Alldatasheet

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Technical content

Features

 RoHS compliant and lead-free  ESD, IEC 61000-4-2, ±30kV contact, ±30kV air  EFT , IEC 61000-4-4, 50A (5/50ns)  Lightning, IEC 61000- 4-5, 2nd Edition, 24A (tP=8/20μs, SM05)  Working voltages: 5V , 12V , 15V , 24V and 36V  Low clamping voltage  Low leakage current  AEC-Q101 qualified (SOT23-3 package)  Moisture Sensitivity Level (MSL -1)  Industrial Equipment  Test and Medical Equipment  Point-of-Sale Terminals  Motor Controls  Legacy Ports (RS-232, RS-485)  Security and Alarm System  Automotive Electronics IC RD TD RTS CTS DSR DTR RS-232 Port Transceiver SM15 (x6) (bidirec/g415onal implementa/g415on) Case GND UMW RSMxx-02HTG www.umw-ic.com 1 UTD Semiconductor Co.,Limited

Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units PPk Peak Pulse Power (tp=8/20μs) 400 W TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 5.0 V Reverse Voltage Drop VR IR=1mA 6.0 V Leakage Current ILEAK VR=5V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 9.8 V IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 13.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.19 Ω Peak Pulse Current (8/20µs) 1 Ipp tp=8/20µs 24.0 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 400 pF CI/O-I/O Reverse Bias=0V , f=1MHz 350 pFwww.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW RSMxx-02HTG Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 12.0 V Reverse Voltage Drop VR IR=1mA 13.3 V Leakage Current ILEAK VR=12V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 18.5 V IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 22.5 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.25 Ω Peak Pulse Current (8/20µs) 1 Ipp tp=8/20µs 1 7. 0 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 150 pF CI/O-I/O Reverse Bias=0V , f=1MHz 120 pF

Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 15.0 V Reverse Voltage Drop VR IR=1mA 16.7 V Leakage Current ILEAK VR=15V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 24.0 V IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 30.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.30 Ω Peak Pulse Current (8/20µs) 1 Ipp tp=8/20µs 12.0 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 100 pF CI/O-I/O Reverse Bias=0V , f=1MHz 75 pF Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 24.0 V Reverse Voltage Drop VR IR=1mA 26.7 V Leakage Current ILEAK VR=24V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 36.0 V IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 42.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.50 Ω Peak Pulse Current (8/20µs) 1 Ipp tp=8/20µs 7. 0 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 65 pF CI/O-I/O Reverse Bias=0V , f=1MHz 50 pF Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 36.0 V Reverse Voltage Drop VR IR=1mA 40.0 V Leakage Current ILEAK VR=36V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 52.0 V IPP=4A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 62.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to GND 0.65 Ω Peak Pulse Current (8/20µs) 1 Ipp tp=8/20µs 5.0 A ESD Withstand Voltage1 VESD IEC 61000-4-2 (Contact Discharge) ±30 kV IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 50 pF CI/O-I/O Reverse Bias=0V , f=1MHz 40 pF Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.www.umw-ic.com 3 UTD Semiconductor Co.,Limited UMW RSMxx-02HTG

10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP Power Derating Curve 100 110 02 55 07 51 00 1251 50 Ambient Temperature - TA (oC) % of Rated Power I PP Non-Repetitive Peak Pulse Power vs. Pulse Time Pulse Duration - tp (µs) Peak Pulse Power - P pk (kW) 0.01 0.1 0.11 10 100 1000 0246 81 01 2 SM05 TLP Voltage (V) TLP Current (A) SM05 T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 TLP Voltage (V) TLP Current (A) SM12 SM12 T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 30 SM15 TLP Voltage (V) TLP Current (A) SM15 T ransmission Line Pulsing(TLP) Plotwww.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW RSMxx-02HTG

e TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (T s(min) ) 150°C - Temperature Max (T s(max) ) 200°C - Time (min to max) (t s) 60 – 180 secs Average ramp up rate (Liquidus) Temp L) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (t L) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (T P) 8 minutes Max. Do not exceed 260°C Soldering Parameters 05 10 15 20 25 30 35 40 SM24 TLP Voltage (V) TLP Current (A) SM24 T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 30 35 40 45 50 55 SM36 TLP Voltage (V) TLP Current (A) SM36 T ransmission Line Pulsing(TLP) Plotwww.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW RSMxx-02HTG

E 1 2 b A D C 502B Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. Marking

Ordering information

Ordercode Package Baseqty Deliverymode SOT-23 3000 Tape and reel www.umw-ic.com 6 UTD Semiconductor Co.,Limited UMW SM05-02HTG UMW RSMxx-02HTG UMW SM12-02HTG UMW SM15-02HTG UMW SM24-02HTG UMW SM36-02HTG SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel