SLW9N90CZ | DigiCamel IC Datasheet

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SLW9N90CZ THINKISEMI | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 7

Technical content

Features

※ Uninterruptible Power Supply(UPS) LCD Panel Power ※ DC-AC Inverter,Amplifier and SMPS Mechanical Data ※ Case:TO-3P non-isolated package ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As per configuration ※ Mountin g p osition: An y ※ Wei g ht: 6.0 g ram a pp roximatel y Epoxy: UL 94V-0 rate flame retardant Schematic Diagram Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved 100% Avalanche Tested D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter SLW9N90CZ Units V DSS Drain-Source Voltage 900 V Drain Current Continuous (T C =2 5 A I D Drain Current Continuous C A - Continuous (T C = 100℃)5 . 4 A I DM Drain Current - Pulsed (Note 1) 36 A V GSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ I AR Avalanche Current (Note 1) E AR Repetitive Avalanche Energy (Note 1) 28 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

4.5 V/ns

P D Power Dissipation (T C = 25℃) 280 W P D - Derate above 25℃ 2.22 W/ ℃ T J , T STG Operating and Storage Temperature Range -55 to +150 ℃ T L Maximum lead temperature for soldering purposes, 300 ℃1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter TYP MAX Units Symbol Parameter TYP MAX Units R θJC Thermal Resistance, Junction-to-Case -- 0.45 ℃/W R θJS Thermal Resistance, Case-to-Sink Typ. 0.24 -- ℃/W R θJA Thermal Resistance, Junction-to-Ambient -- 40 ℃/W

Electrical Characteristics

T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 uA 900 -- -- V △BV DSS / △T J Breakdown Voltage Temperature Coefficient I D = 250 uA, Referenced to 25℃ -- 0.9 -- V/ ℃ I DSS Zero Gate Voltage Drain Current V DS = 900 V, V GS = 0 V -- -- 1 uA V DS = 720 V, T C = 125℃ -- -- 10 uA I GSSF Gate-Body Leakage Current, Forward V GS = 25 V, V DS = 0 V -- -- 10 uA I GSSR Gate-Body Leakage Current, Reverse V GS = -25 V, V DS = 0 V -- -- -10 uA On Characteristics On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 uA 2.0 -- 4.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D g FS Forward Transconductance V DS = 40 V, I D = 4.5 A (Note 4) -- 9.0 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, -- 2780 -- pF C Output Capacitance 228 pF f = 1.0 MHz C oss Output Capacitance 228 pF C rss Reverse Transfer Capacitance -- 28 -- pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 450 V, I D = 9 A, R G = 25 Ω (Note 4, 5) -- 55 -- ns t r Turn-On Rise Time -- 130 -- ns t d(off) Turn-Off Delay Time -- 110 -- ns t f Turn-Off Fall Time -- 80 -- ns Q g Total Gate Charge V DS = 720 V, I D = 9 A, V 10 V -- 70 -- nC Q Gate Source Charge 13 5 nC V GS V (Note 4, 5) Q gs Gate Source Charge nC Q gd Gate-Drain Charge -- 27 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 9 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 9 A -- -- 1.4 V t rr Reverse Recovery Time V GS = 0 V, I S Q rr Reverse Recovery Charge dI F / dt = 100 A/us (Note 4) -- 10 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, I AS = 9A, V DD = 50V, R G = 25Ω, Starting T J = 25°C 3. I SD  9A, di/dt  200A/us, V DD  BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width  300us, Duty cycle  2% 5. Essentially independent of operating temperature

http://www.thinkisemi.com.tw/ Page 5/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. SLW9N90CZ Gate Charge Test Circuit & Waveform V Current Regulator V GS 10V Q g Q gs Q gd V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Resistive Switchin g Test Circuit & Waveforms Charge 3mA Current Sampling (I G Resistor Current Sampling (I D Resistor R R g V in V out 10% 90%V DD ( 0.5 rated V DS 10V V out V in R L DUT R G Unclamped Inductive Switching Test Circuit & Waveforms t d(on) t r t on t off t d(off) t f 10V E AS L I AS ---- BV DSS -- V DD BV DSS Vary t p to obtain required peak I D V DD C L L V DS I D R G DUT BV DSS V DD I AS V DS (t) I D (t) 10V t p t p Time

dv/dt controlled by 밨 G S controlled by Duty Factor 밆? V DD
dv/dt controlled by R G SD controlled by pulse period 10V V GS ( Driver ) I S I FM , Body Diode Forward Current D = Gate Pulse Width Gate Pulse Period S ( DUT ) V DS ( DUT ) Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt V DD Body Diode Forward Voltage Drop V f

15.60 ±0.20 4.80 ±0.20 13.60 ±0.20 9.60 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 1.40 ±0.20 ø3.20 ±0.10 3.80 ±0.20 13.90 ±0.20 3.50 ±0.20 16.50 ±0.30 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.50 +0.15 –0.05 0.60 +0.15 –0.05 5.45TYP [5.45 ±0.30 5.45TYP [5.45 ±0.30 TO-3PN-SQ/TO-3PB-SQ http://www.thinkisemi.com.tw/ Page 7/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. SLW9N90CZ

Product Information

SLW9N90CZ specifications and overview.

Summary

THINKISEMI 9A,900V N-CHANNEL PLANAR STRIPE POWER MOSFETs

Description

THINKISEMI 9A,900V N-CHANNEL PLANAR STRIPE POWER MOSFETs

Source title SLW9N90CZ Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

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