SLW9N90C

SLW9N90C THINKISEMI | Alldatasheet

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Features

※ Uninterruptible Power Supply(UPS) LCD Panel Power ※ DC-AC Inverter,Amplifier and SMPS Mechanical Data ※ Case:TO-3P non-isolated package ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As per configuration ※ Mountin g p osition: An y ※ Wei g ht: 6.0 g ram a pp roximatel y Epoxy: UL 94V-0 rate flame retardant Schematic Diagram Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved 100% Avalanche Tested /g36/g69/g86/g82/g79/g88/g87/g72/g3/g48/g68/g91/g76/g80/g88/g80/g3/g53/g68/g87/g76/g81/g74/g86/g3/g3/g3/g3/g3 T C = 25ƒC unless otherwise noted /g54/g92/g80/g69/g82/g79 /g51/g68/g85/g68/g80/g72/g87/g72/g85 /g54/g47/g58/g28/g49/g28/g19/g38 /g56/g81/g76/g87/g86 V DSS Drain-Source Voltage 900 V Drain Current Continuous (T C =2 5 A I D Drain Current Continuous C A - Continuous (T C = 100୅)5 . 4 A I DM Drain Current - Pulsed (Note 1) 36 A V GSS Gate-Source Voltage —30 V EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ I AR Avalanche Current (Note 1) E AR Repetitive Avalanche Energy (Note 1) 28 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

4.5 V/ns

P D Power Dissipation (T C = 25୅) 280 W P D - Derate above 25୅ 2.22 W/ ୅ T J , T STG Operating and Storage Temperature Range -55 to +150 ୅ T L Maximum lead temperature for soldering purposes, 300 ୅1/8" from case for 5 seconds /g55/g75/g72/g85/g80/g68/g79/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86/g3 /g54/g92/g80/g69/g82/g79 /g51/g68/g85/g68/g80/g72/g87/g72/g85 /g55/g60/g51 /g48/g36/g59 /g56/g81/g76/g87/g86 /g54/g92/g80/g69/g82/g79 /g51/g68/g85/g68/g80/g72/g87/g72/g85 /g55/g60/g51 /g48/g36/g59 /g56/g81/g76/g87/g86 R /g537JC Thermal Resistance, Junction-to-Case -- 0.45 ୅/W R /g537JS Thermal Resistance, Case-to-Sink Typ. 0.24 -- ୅/W R /g537JA Thermal Resistance, Junction-to-Ambient -- 40 ୅/W

http://www.thinkisemi.com.tw/ Page 2/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. SLW9N90C /g40/g79/g72/g70/g87/g85/g76/g70/g68/g79/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86/g3/g3/g3/g3/g3/g3/g3/g3/g3 T C = 25ƒC unless otherwise noted /g54/g92/g80/g69/g82/g79 /g51/g68/g85/g68/g80/g72/g87/g72/g85 /g55/g72/g86/g87/g3/g38/g82/g81/g71/g76/g87/g76/g82/g81/g86 /g48/g76/g81 /g55/g92/g83 /g48/g68/g91 /g56/g81/g76/g87/g86 /g50/g73/g73/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 uA 900 -- -- V ೚BV DSS / ೚T J Breakdown Voltage Temperature Coefficient I D = 250 uA, Referenced to 25୅ -- 0.9 -- V/ ୅ I DSS Zero Gate Voltage Drain Current V DS = 900 V, V GS = 0 V -- -- 1 uA V DS = 720 V, T C = 125୅ -- -- 10 uA I GSSF Gate-Body Leakage Current, Forward V GS = 25 V, V DS = 0 V -- -- 10 uA I GSSR Gate-Body Leakage Current, Reverse V GS = -25 V, V DS = 0 V -- -- -10 uA /g50/g81 /g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 /g50/g81 /g3 /g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 uA 2.0 -- 4.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D g FS Forward Transconductance V DS = 40 V, I D = 4.5 A (Note 4) -- 9.0 -- S /g39/g92/g81/g68/g80/g76/g70/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 C iss Input Capacitance V DS = 25 V, V GS = 0 V, -- 2780 -- pF C Output Capacitance 228 pF f = 1.0 MHz C oss Output Capacitance 228 pF C rss Reverse Transfer Capacitance -- 28 -- pF /g54/g90/g76/g87/g70/g75/g76/g81/g74/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 t d(on) Turn-On Delay Time V DD = 450 V, I D = 9 A, R G = 25 /g525 (Note 4, 5) -- 55 -- ns t r Turn-On Rise Time -- 130 -- ns t d(off) Turn-Off Delay Time -- 110 -- ns t f Turn-Off Fall Time -- 80 -- ns Q g Total Gate Charge V DS = 720 V, I D = 9 A, V 10 V -- 70 -- nC Q Gate Source Charge 13 5 nC V GS V (Note 4, 5) Q gs Gate Source Charge nC Q gd Gate-Drain Charge -- 27 -- nC /g39/g85/g68/g76/g81/g16/g54/g82/g88/g85/g70/g72/g3/g39/g76/g82/g71/g72/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86/g3/g68/g81/g71/g3/g48/g68/g91/g76/g80/g88/g80/g3/g53/g68/g87/g76/g81/g74/g86 I S Maximum Continuous Drain-Source Diode Forward Current -- -- 9 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 9 A -- -- 1.4 V t rr Reverse Recovery Time V GS = 0 V, I S Q rr Reverse Recovery Charge dI F / dt = 100 A/us (Note 4) -- 10 -- uC /g49/g82/g87/g72/g86/g29 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, I AS = 9A, V DD = 50V, R G = 25/g525, Starting T J = 25ƒC 3. I SD /g1009A, di/dt /g100200A/us, V DD /g100BV DSS, Starting T J = 25ƒC 4. Pulse Test : Pulse width /g100300us, Duty cycle /g1002% 5. Essentially independent of operating temperature

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http://www.thinkisemi.com.tw/ Page 5/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. SLW9N90C /g42/g68/g87/g72/g3/g38/g75/g68/g85/g74/g72/g3/g55/g72/g86/g87/g3/g38/g76/g85/g70/g88/g76/g87/g3/g3/g9/g3/g3/g58/g68/g89/g72/g73/g82/g85/g80 V Current Regulator V GS 10V Q g Q gs Q gd V GS DUT V DS 300nF 50K/g525 200nF12V Same Type as DUT /g53/g72/g86/g76/g86/g87/g76/g89/g72/g3/g54/g90/g76/g87/g70/g75/g76/g81 /g74 /g3/g55/g72/g86/g87/g3/g38/g76/g85/g70/g88/g76/g87/g3/g3/g9/g3/g3/g58/g68/g89/g72/g73/g82/g85/g80/g86 Charge 3mA Current Sampling (I G Resistor Current Sampling (I D Resistor R R /g74 V in V out 10% 90%V DD ( 0.5 rated V DS 10V V out V in R L DUT R G /g56/g81/g70/g79/g68/g80/g83/g72/g71/g3/g44/g81/g71/g88/g70/g87/g76/g89/g72/g3/g54/g90/g76/g87/g70/g75/g76/g81/g74/g3/g55/g72/g86/g87/g3/g38/g76/g85/g70/g88/g76/g87/g3/g3/g9/g3/g3/g58/g68/g89/g72/g73/g82/g85/g80/g86 t d(on) t r t on t off t d(off) t f 10V E AS L I AS ---- BV DSS -- V DD BV DSS Vary t p to obtain required peak I D V DD C L L V DS I D R G DUT BV DSS V DD I AS V DS (t) I D (t) 10V t p t p Time

http://www.thinkisemi.com.tw/ Page 6/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. SLW9N90C /g51/g72/g68/g78/g3/g39/g76/g82/g71/g72/g3/g53/g72/g70/g82/g89/g72/g85/g92/g3/g71/g89/g18/g71/g87/g55/g72/g86/g87/g3/g38/g76/g85/g70/g88/g76/g87/g3/g3/g9/g3/g3/g58/g68/g89/g72/g73/g82/g85/g80/g86 DUT DUT V DS L I S DriverV GS R G Same Type as DUT V GS

• dv/dt controlled by ᫸ G S controlled by Duty Factor ᫪? V DD
• dv/dt controlled by R G
• I SD controlled by pulse period 10V V GS ( Driver ) I S I FM , Body Diode Forward Current D = Gate Pulse Width Gate Pulse Period S ( DUT ) V DS ( DUT ) Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt V DD Body Diode Forward Voltage Drop V f

15.60 ±0.20 4.80 ±0.20 13.60 ±0.20 9.60 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 1.40 ±0.20 ø3.20 ±0.10 3.80 ±0.20 13.90 ±0.20 3.50 ±0.20 16.50 ±0.30 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.50 +0.15 –0.05 0.60 +0.15 –0.05 5.45TYP [5.45 ±0.30 5.45TYP [5.45 ±0.30 TO-3PN-SQ/TO-3PB-SQ http://www.thinkisemi.com.tw/ Page 7/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. SLW9N90C