SLW16N50C THINKISEMI | Alldatasheet

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※ Uninterruptible Power Supply(UPS) LCD Panel Power ※ DC-AC Inverter,Amplifier and SMPS Mechanical Data ※ Case:TO-3P non-isolated package ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As per configuration ※ Mountin g p osition: An y ※ Wei g ht: 6.0 g ram a pp roximatel y Epoxy: UL 94V-0 rate flame retardant Schematic Diagram Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve ESD Capability Improved 100% Avalanche Tested Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ± 30 V ID Drain Current TC = 25℃ 16 A TC = 100℃ 9.6 A IDM Pulsed Drain Current (Note 1) 64 A EAS Single Pulsed Avalanche Energy (Note 2) 995 mJ EAR Repetitive Avalanche Energy (Note 1) 20.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) -Derate above 25℃ 205 W

2.1 W/℃

TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RθJC Thermal Resistance,Junction-to-Case -- 0.6 ℃/W RθCS Thermal Resistance,Case-to-Sink Typ. 0.24 -- ℃/W RθJA Thermal Resistance,Junction-to-Ambient -- 40 ℃/W

http://www.thinkisemi.com.tw/ Page 2/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. SLW16N50C Electrical Characteristics TJ=25 ℃ unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 16.0 A ISM Pulsed Source-Drain Diode Forward Current -- -- 64.0 VSD Source-Drain Diode Forward Voltage IS = 16.0 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time IS = 16.0A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 500 -- ns㎱ Qrr Reverse Recovery Charge -- 5.0 -- uC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA㎂ 500 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.6 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 uA VDS = 400 V, TJ = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current,Forward VGS = 30 V, VDS = 0 V -- -- 100 nA㎁ IGSSR Gate-Body Leakage Current,Reverse VGS =- 30 V, VDS = 0 V -- -- -100 nA㎁ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2200 -- pF㎊ Coss Output Capacitance -- 350 -- pF㎊ Crss Reverse Transfer Capacitance -- 35 -- pF Dynamic Characteristics td(on) Turn-On Time VDS = 250 V, ID = 16.0 A, RG = 25 Ω (Note 4,5) -- 50 -- ns tr Turn-On Rise Time -- 170 -- ns㎱ td(off) Turn-Off Delay Time -- 90 -- ns㎱ tf Turn-Off Fall Time -- 80 -- ns㎱ Qg Total Gate Charge VDS = 400 V, ID = 16.0 A, VGS = 10 V (Note 4,5) -- 45 -- nC Qgs Gate-Source Charge -- 12 -- nC Qgd Gate-Drain Charge -- 20 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 uA㎂ 2.5 3.8 4.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 8.0A -- 0.32 0.38 Ω NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=7mH, IAS=16.0A, VDD=50V, RG=25 Ω,Starting TJ=25 ℃ 3. ISD≤16.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25 ℃ 4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics

http://www.thinkisemi.com.tw/ Page 5/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2 ---- 2 Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF 12V Same Type as DUT 10V DUT RG L I D BVDSS t p VDD IAS VDS (t) ID (t) Time SLW16N50C

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width http://www.thinkisemi.com.tw/ Page 6/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. SLW16N50C

15.60 ±0.20 4.80 ±0.20 13.60 ±0.20 9.60 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 1.40 ±0.20 ø3.20 ±0.10 3.80 ±0.20 13.90 ±0.20 3.50 ±0.20 16.50 ±0.30 12.76 ±0.20 19.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.50 +0.15 –0.05 0.60 +0.15 –0.05 5.45TYP [5.45 ±0.30 5.45TYP [5.45 ±0.30 TO-3PN-SQ/TO-3PB-SQ http://www.thinkisemi.com.tw/ Page 7/7Rev.11T © 1995 Thinki Semiconductor Co., Ltd. SLW16N50C