SLVU2.8 SEMITECH | Alldatasheet

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD M a r c h 2 0 0 7 SLVU2.8 Utralow Capacitance Transient Voltage Suppressors General Description Features The Utralow Capacitance Transient Voltage Suppressors are designed to low votage, integrated circuits from transients caused by electrostatic discharge (ESD), electrical fast transients (EFT), tertiary lightning and other induced voltages. z 400 W Peak Pulse Power per Line (tp=8/20 μs) z One Device Protects one Unidirectional Line. z Low Capacitance. z Low Leakage Current. z Low Operating and Clamping Voltages. z Transient Protection for High Speed Data Lines to z Ethernet – 10/100/1000 Base T IEC61000-4-4(EFT) 40A(5/50ns) IEC61000-4-5(lightning) 24A(8/20us) z WAN/LAN Equipment z Desktops,Servers,Notebooks & Handhelds z Laser Diode Protection S O T - 2 3 Absolute Maximum Ratings Parameter Value Units Symbol Peak Pulse Power (tp = 8/20μs) - See Fig1. P 400 W PK Peak Pulse Current (tp = 8/20μs) I 24 A PP Storage Temperature Range T -55 to 150 °C STG Operating Junction Temperature Range T -55 to 150 °C J Fig1. Peak Pulse Power VS Pulse Time

SLVU2.8 . 2. Electrical Parameter Symbol Parameter IPP Peak Pulse Current VC Clamping Voltage @ IPP VRWM Reverse Stand-Off Voltage IR Reverse Leakage Current @ VRWM VSB Snap-Back Voltage @ ISB ISB Snap-Back Current VPT Punch-Through Voltage IPT Punch-Through Current VBRR Reverse Breakdown Voltage @ IBRR IBRR Reverse Breakdown Current F i g 2 . SLVU2.8 IV Characteristic Curve

Electrical Characteristics

Parameter Symbol Conditions Minimum Typical Maximum Units Reverse Stand-Off Voltage V Pin 3 to 1 or Pin 2 to 1 2.8 V RWM Punch-Through Voltage V IPT PT = 2uA, Pin 3 to 1 2.8 V Snap-Back Voltage V ISB SB = 50mA, Pin 3 to 1 2.8 V V =2.8V, T=25℃ RWM Reverse Leakage Current I 1 uA R Pin 3 to 1 or Pin 2 to 1 IClamping Voltage VC PP =2A, tP=8/20us 3.9 V Pin 3 to 1 IClamping Voltage VC PP =5A, tP=8/20us 7 V Pin 3 to 1 IClamping Voltage VC PP =24A, tP=8/20us 12.5 V Pin 3 to 1 IClamping Voltage VC PP =5A, tP=8/20us 8.5 V Pin 2 to 1 IClamping Voltage VC PP =24A, tP=8/20us 15 V Pin 2 to 1 Pin 3 to 1 and 2 Junction Capacitance C (Pin 1 and 2 tied together) 70 100 pF j VR =0V, f =1MHz Pin 2 to 1 (Pin 3 N.C.) Junction Capacitance C 3.5 5 pF j VR =0V, f =1MHz

SLVU2.8 Steering Diode Characteristics Parameter Symbol Conditions Typical Minimum Maximum Units =10uA, Pin 3 to 2 Reverse Breakdown Voltage V I 40 V BRR T V =2.8V, T =25℃RWM Reverse Leakage Current I 1 UA BRR Pin 3 to 2 =1A, Pin 2 to 3 Forward Voltage V I 2 V F F Typical Characteristics Fig3. Pulse Waveform Fig4. Power Derating Curve Fig5. Clamping Voltage vs. F i g 6 . F o r w a r d V o l t a g e v s . Peak Pulse Current Forward Current . 3.

SLVU2.8 Fig7. Insertion Loss S21 Application Note The SLVU2.8 is ideal for providing protection for el ectronic equipment that is susceptible to damage caused by Electrostatic Discharge (ESD), Electrical Fast Transients (EFT) and tertiary lightning effects. This product is offered in a unidirectional configuration and provides both commonmode or differential-mode protection. Unidirectional Common-Mode Protection (Figure 9) The SLVU2.8 provides one line of unidirectional protection in a common-mode configuration as depicted in figure 9. Circuit connectivity is as follows: z Line 1 is connected to Pin 3 z Pins 1 and 2 are connected to ground Fig9. . 4.

SLVU2.8 Bidirectional Common-Mode Protection (Figure 10) Two SLVU2.8 devices provide one line of bidirectional protection in a common-mode configuration as depicted in figure 10. Circuit connectivity is as follows: z Line 1 is connected to Pin1 of Device 1 & Pin 2 of Device 2 z Pin 2 of Device 1 and Pin 1 of Device 2 are connected to ground z Pin 3 of both devices is not connected Bidirectional Differential-Mode Protection (Figure 11) Two SLVU2.8 devices provide up to two lines of bidrectional protection in a differenitalmode configuration as depicted in figure 11. Circuit connectivity is as follows: z Line 1 is connected to Pin1 of Device 1 & Pin 2 of Device 2 z Line 2 is connected to Pin 2 of Device 1 & Pin 1 of Device 2 Circuit Board Layout Protection Circuit board layout is critical for Electromagnetic Compatibility (EMC) protection. The following guidelines are recommended: z The protection device should be plac ed near the input terminals or co nnectors, the device will divert the transient current immediately before it can be coupled into the nearby traces. z The path length between the TVS device and the protected line should be minimized. z All conductive loops including power and ground loops should be minimized. z The transient current return path to ground should be kept as short as possible to reduce parasitic inductance. z Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. Fig10. Fig11. . 5.

SLVU2.8 Typical Applications Fig12. 10/100 Ethernet Protection Circuit Fig13. 10/100 Ethernet “Enhanced ” Lightning Protection Circuit . 6.

SLVU2.8 SOT-23 MECHANICAL DATA Millimeters Dim Min TYP Max 1.00 1.40 A 0 0.10 A1 1.00 1.30 A2 0.35 0.50 b 0.10 0.20 c 2.70 2.90 3.10 D 2.40 2.80 E 1.40 1.60 E1 0.85 1.15 e 1.90 e1 0.40 . L1 0° 10° q 0.45 0.55 S . 7.