SLVU2.8-4BTG-S LITTELFUSE | Alldatasheet

Document overview

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Technical content

Features

Applications

The SLVU2.8-4BTG-S was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in series with each low voltage TVS to present a low loading capacitance to the line being protected. These robust structures can safely absorb repetitive ESD strikes at ±30kV (contact discharge) per IEC61000-4-2 standard and each structure can safely dissipate up to 40A (IEC61000-4-5 2 nd edition, tP=8/20μs) with very low clamping voltages. Pinout Functional Block Diagram

  • ESD, IEC61000-4-2, ±30kV contact, ±30kV air
  • EFT, IEC61000-4-4, 40A (5/50ns)
  • Lightning, IEC61000-4-5 2nd edition, 40A (8/20μs)
  • Low capacitance of 2pF per line
  • Low leakage current of 1μA (MAX) at 2.8V
  • SOIC-8 (JEDEC MO-012) pin configuration allows for simple flow-through layout
  • Halogen free, Lead free and RoHS compliant
  • 10/100/1000 Ethernet
  • WAN/LAN Equipment
  • Switching Systems
  • Desktops, Servers, and Notebooks
  • Analog Inputs
  • Base Stations 56 78 43 21 Pin 1.3 Pin 2.4 Pin 6.8 Pin 5.7 RoHS Pb GREEN Application Example Ethernet PHY RJ-45 Connector SLVU2.8-4 Device is shown as transparent for actual footprintCase GND Tx+ Tx- Rx+ Rx- SLVU2.8-4BTG-S - 2.8V 40A TVS Array

©2015 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 02/24/16 Lightning Surge Protection - SLVU2.8-4BTG-S Absolute Maximum Ratings Parameter Rating Units Peak Pulse Power (tP=8/20µs) 600 W Peak Pulse Current (tP=8/20µs) 40 A Operating Temperature -40 to 125 ºC Storage Temperature -55 to 150 ºC Electrical Characteristics (TOP = 25°C) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 2.8 V Reverse Breakdown Voltage VBR IT=2μA 3.0 V Snap Back Voltage VSB IT=50mA 2.8 V Reverse Leakage Current ILEAK VR=2.8V (Each Line) 1 μA Clamping Voltage1 VC IPP=5A, tP=8/20μs (Each Line) 9.0 V Clamping Voltage1 VC IPP=24A, tP=8/20μs (Each Line) 18.0 V ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact) ±30 kV IEC61000-4-2 (Air) ±30 kV Dynamic Resistance RDYN (VC2 - VC1) / (IPP2 - IPP1) (Each Line) 1. 1 Ω Diode Capacitance1 CD VR=0V, f=1MHz (Each Line) 2.0 pF CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Note: 1Parameter is guaranteed by design and/or device characterization. Clamping Voltage vs. IPP Capacitance vs. Reverse Voltage 8/20μS Pulse Waveform 0.5 1.5 2.5 3.5 4.5 Capacitance (pF) Bias Voltage (V) 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP 0.0 5.0 10.0 15.0 20.0 Clamp Voltage (VC) Peak Pulse Current-IPP (A)

©2015 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 02/24/16 Lightning Surge Protection - SLVU2.8-4BTG-S Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone T L to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters Package Dimensions — Mechanical Drawings and Recommended Solder Pad Outline Package SOIC-8 Pins 8 JEDEC MS-012 Millimetres Inches Min Max Min Max A 1 .35 1 .75 0.053 0.069 A1 0.10 0.25 0.004 0.010 A2 1 .25 1 .65 0.050 0.065 B 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 5.80 6.20 0.228 0.244 E1 3.80 4.00 0.150 0.157 e 1 .27 BSC 0.050 BSC L 0.40 1 .27 0.016 0.050 o Recommended Soldering Pad Outline (Reference Only) FL Product Characteristics Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.004 inches(0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to JEDEC SPEC MO-203 Issue A 5. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 6. Package surface matte finish VDI 11-13.

©2015 Littelfuse, Inc. Specifications are subject to change without notice. TVS Diode Arrays (SPA ® Diodes) Revision: 02/24/16 Lightning Surge Protection - SLVU2.8-4BTG-S

Ordering Information

Part Number Package Marking Min. Order Qty. SLVU2.8-4BTG-S SOIC-8 U2.8-4 2500 Part Numbering System Part Marking System SLVU2.8 B T G Series Package B = SOIC-8 No. of channels T= Tape & Reel G= Green - S Customer Code FL Date Code Marking X:Location YYWW: Date Code U2.8-4 XYYWW Marking Code Pin 1 Embossed Carrier T ape & Reel Specification — SOIC Package User Feeding Direction Pin 1 Location Symbol Millimetres Inches Min Max Min Max E 1 .65 1 .85 0.065 0.073 F 5.4 5.6 0.213 0.22 P2 1 .95 2.05 0.077 0.081 D 1. 5 1. 6 0.059 0.063 D1 1 .50 Min 0.059 Min P0 3.9 4.1 0.154 0.161 W 11. 9 12.1 0.468 0.476 P 7. 9 8.1 0.311 0.319 A0 6.3 6.5 0.248 0.256 B0 5.1 5.3 0.2 0.209 K0 2 2.2 0.079 0.087