SLG59H1017V

SLG59H1017V RENESAS | Alldatasheet

Document overview

• Manufacturer or author: pwong
• PDF pages: 37

Technical content

Features

• Wide Operating Input Voltage: 12 V or 24 V
• Maximum Continuous Current: 4 A
• Automatic nFET SOA Protection
• 10 W SOA Protection Threshold
• High-performance MOSFET Switch Low RDS ON : 13.3 mΩ at V IN = 24 V Low ΔRDS ON /ΔV IN : < 0.05 mΩ/V Low ΔRDS ON /ΔT: < 0.06 mΩ/°C
• Pin-selectable 12V/24V Input Overvoltage and Undervoltage Lockout
• Capacitor-adjustable Inrush Current Control
• Two stage Current Limit Protection: Resistor-adjustable Active Current Limit Internal Short-circuit Current limit
• Open Drain FAULT Signaling
• Analog MOSFET Current Monitor Output: 10 µA/A
• Fast 4 kΩ Output Discharge
• Pb-Free / Halogen-Free / RoHS Compliant Packaging Pin Configuration

Applications

• Power-Rail Switching
• Multifunction Printers
• Large-format Copiers
• Telecommunications Equipment
• High-performance Computing

12 V and 24 V Point-of-Load Power Distribution

• Motor Drives ON 1 FAULT CAP GND GND 2 VIN 4 VOUT SEL RSET IOUT VIN VIN 5 VIN 7 VOUT 12 VOUT VOUT VIN VOUT 8 9 18-pin STQFN 1.6 x 3.0 mm, 0.40mm pitch (Top View) SLG59H1017V ON

3 V FS - Connect

(CL/SC Detection and Over Temperature Protection) Discharge CMOS Input

27 V OVLO

20.5 V UVLO

24 V V IN

47 µF 22 µF CLOAD = C 5 + C 6 CAP RSET VIN SEL FAULT VOUT ON IOUT RIOUT 84.5 kΩ CIOUT 180 pF RPU 100 k Ω CSLEW 10 nF RSET 30.1 kΩ RPU 10 kΩ 47 µF 22 µF 0.1 µF

24 V ±5%

CIN = C 1 + C 2 + C 3

Revision 1.04 Page 2 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Pin Description

Ordering Information

Pin # Pin Name Type Pin Description

1 ON Input

A low-to-high transition on this pin initiates the operation of the SLG59H1017V’s state machine. ON is an asserted HIGH, level-sensitive CMOS input with ON_V IL < 0.3 V and ON_V IH > 0.9 V. As the ON pin input circuit does not have an internal pull-down resistor, connect this pin to a general-purpose output (GPO) of a microcontroller, an application processor, or a system controller, do not allow this pin to be open-circuited. 2 GND GND Pin 2 is a low-current GND terminal for the SLG59H1017V. Connect directly to Pin 3.

3 GND GND

Pin 3 is the main ground connection for the SLG59H1017V’s internal charge pump, its gate driver and current-limit circuits as well as its internal state machine. Therefore, use a short, stout connection from Pin 3 to the system’s analog or power plane. 4-8 VIN MOSFET VIN supplies the power for the operation of the SLG59H1017V, its internal control circuitry, and the drain terminal of the nFET load switch. With 5 pins fused together at VIN, connect a 47 μF (or larger) low-ESR capacitor from this pin to ground. Capacitors used at VIN should be rated at 50 V or higher. 9-13 VOUT MOSFET Source terminal of n-channel MOSFET (5 pins fused for VOUT). Connect a 47 μF (or larger) low-ESR capacitor from this pin to ground. Capacitors used at VOUT should be rated at 50 V or higher.

14 SEL Input

As a low logic-level CMOS input with SEL_V IL < 0.3 V and SEL_V IH > 1.65 V, SEL selects one of two undervoltage/overvoltage lockout windows. When SEL = LOW, the V IN undervoltage/overvoltage lockout window is set for 12 V ±10% applications. When SEL = HIGH, the V IN undervoltage/overvoltage lockout window is set for 24 V ± 5% applications. See the Electrical Characteristics table for additional information.

15 FAULT Output

An open drain output, FAULT is asserted within TFAULT LOW when a V IN undervoltage, V IN overvoltage, a current-limit, or an over-temperature condition is detected. FAULT is deasserted within TFAULT HIGH when the fault condition is removed. Connect an 100 k Ω external resistor from the FAULT pin to local system logic supply.

16 CAP Output

A low-ESR, stable dielectric, ceramic surface-mount capacitor connected from CAP pin to GND sets the V OUT slew rate and overall turn-on time of the SLG59H1017V. For best performance, the range for C SLEW values are 10 nF ≤ C SLEW ≤ 20 nF – please see typical characteristics for additional information. Capacitors used at the CAP pin should be rated at 10 V or higher. Please consult Applications Section on how to select C SLEW based on V OUT slew rate and loading conditions.

17 IOUT Output

IOUT is the SLG59H1017V’s power MOSFET load current monitor output. As an analog current output, this signal when applied to a ground-reference resistor generates a voltage proportional to the current through the n-channel MOSFET. The I OUT transfer characteristic is typically 10 μA/A with a voltage compliance range of 0.5 V ≤ V IOUT ≤ 4 V. Optimal I OUT linearity is exhibited for 0.5 A ≤ IDS ≤ 4 A. In addition, it is recommended to bypass the IOUT pin to GND with a 0.18 nF capacitor.

18 RSET Input

A 1%-tolerance, metal-film resistor between 20 kΩ and 91 kΩ sets the SLG59H1017V’s active current limit. A 91 kΩ resistor sets the SLG59H1017V’s active current limit to 1 A and a 20 kΩ resistor sets the active current limit to 4.5 A. Part Number Type Production Flow SLG59H1017V STQFN 18L FC Industrial, -40 °C to 85 °C SLG59H1017VTR STQFN 18L FC (Tape and Reel) Industrial , -40 °C to 85 °C

Revision 1.04 Page 3 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Absolute Maximum Ratings Parameter Description Conditions Min. Typ. Max. Unit VIN to GND Load Switch Input Voltage to GND Continuous -0.3 -- 30 V Maximum pulsed V IN , pulse width <0.1s -- -- 32 V VOUT to GND Load Switch Output Voltage to GND -0.3 -- V IN V ON, SEL, CAP , RSET, IOUT, and FAULT to GND ON, SEL, CAP , RSET, IOUT, and FAULT Pin Voltages to GND -0.3 -- 7 V TS Storage Temperature -65 -- 150 °C ESD HBM ESD Protection Human Body Model 2000 -- -- V ESD CDM ESD Protection Charged Device Model 500 -- -- V MSL Moisture Sensitivity Level 1 θJA Package Thermal Resistance, Junction-to-Ambient 1.6 x 3.0 mm 18L STQFN; De - termined with the device mount - ed onto a 1 in 2, 1 oz. copper pad of FR-4 material -- 40 -- °C/W MOSFET IDS CONT Continuous Current from VIN to VOUT T MOSFET IDS PEAK Peak Current from VIN to VOUT Maximum pulsed switch current, pulse width < 1 ms -- -- 6 A Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at thes e or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Electrical Characteristics

12 V ≤ V IN ≤ 24 V; C IN = 47 µF, T A = -40 °C to 85 °C, unless otherwise noted. Typical values are at T A = 25 °C Parameter Description Conditions Min. Typ. Max. Unit VIN Operating Input Voltage 10.8 -- 25.2 V VIN(OVLO) VIN Overvoltage Lockout Threshold VIN ↑; SEL = HIGH 25.3 27 28.5 V VIN ↑; SEL = LOW 13.3 13.7 14.5 V VIN(UVLO) VIN Undervoltage Lockout Threshold VIN ↓; SEL = HIGH 19.5 20.5 21.5 V VIN ↓; SEL = LOW 9.7 10.2 10.7 V IQ Quiescent Supply Current ON = HIGH; I DS = 0 A -- 0.5 0.6 mA ISHDN OFF Mode Supply Current ON = LOW; I DS = 0 A -- 1 3 µA RDS ON ON Resistance TA = 25 °C; I DS = 0.1 A -- 13.3 14 mΩ TA = 85 °C; I DS = 0.1 A -- 16.8 19 mΩ MOSFET IDS Current from VIN to VOUT Continuous -- -- 4 A ILIMIT Short-circuit Current Limit, I SCL VOUT < 0.5 V -- 0.5 - A TACL Active Current Limit Response Time V IN = 12 V; R SET = 91 kΩ; CLOAD = 10 µF; switch in 10 Ω load 117 150 220 µs RDISCHRG Output Discharge Resistance V OUT = 0.4 V Input Bias; ON = LOW 3.5 4.4 5.3 kΩ IOUT Analog MOSFET Current Monitor Output IDS = 1 A 9.3 10 10.7 µA IDS = 3 A 28.5 30 31.5 µA

Revision 1.04 Page 4 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation TIOUT IOUT Response Time to Change Current in Main MOSFET CIOUT = 180 pF; Step load 0 to 2.4 A; 0% to 90% I OUT -- 45 -- µs CLOAD Output Load Capacitance C LOAD connected from VOUT to GND -- 47 -- µF TON_Delay ON Delay Time 50% ON to 10% V OUT ↑; VIN = 12 V; C SLEW = 10 nF; RLOAD = 100 Ω, C LOAD = 10 µF 480 600 720 µs 50% ON to 10% V OUT ↑; VIN = 24 V; C SLEW = 10 nF; RLOAD = 100 Ω, C LOAD = 10µF 0.8 1.0 1.2 ms TTotal_ON Total Turn ON Time 50% ON to 90% V OUT ↑ Set by External C SLEW 1 ms 50% ON to 90% V OUT ↑; VIN = 12 V; C SLEW = 10 nF; RLOAD = 100 Ω, C LOAD = 10 µF 2.9 3.6 4.3 ms 50% ON to 90% V OUT ↑; VIN = 24 V; C SLEW = 10 nF; RLOAD = 100 Ω, C LOAD = 10 µF 5.7 7.1 8.5 ms VOUT(SR) VOUT Slew rate 10% V OUT to 90% V OUT ↑ Set by External C SLEW

1 V/ms

10% V OUT to 90% V OUT ↑; VIN = 12 V or 24 V; C SLEW = 10 nF; RLOAD = 100 Ω, C LOAD = 10 µF 2.7 3.2 3.9 V/ms TOFF_Delay OFF Delay Time 50% ON to V OUT Fall Start ↓; VIN = 12 V or 24 V; RLOAD = 100 Ω, No C LOAD -- 15 -- µs TFALL VOUT Fall Time 90% V OUT to 10% V OUT ; ON = HIGH-to-LOW; V IN = 12 V or 24 V; RLOAD = 100 Ω, No C LOAD 10.4 12.7 14.3 µs TFAULT LOW FAULT Assertion Time Abnormal Step Load Current event to FAULT ↓; I ACL = 1 A; V IN = 24 V; RSET = 91 kΩ; switch in 20 Ω load -- 80 -- µs TFAULT HIGH FAULT De-assertion Time Delay to FAULT ↑ after fault condition is removed; I ACL = 1 A; V IN = 24 V; RSET = 91 kΩ; switch out 20 Ω load -- 180 -- µs FAULT VOL FAULT Output Low Voltage I FAULT = 1 mA -- 0.2 -- V ON_V IH ON Pin Input High Voltage 0.9 -- 5 V ON_V IL ON Pin Input Low Voltage -0.3 0 0.3 V SEL_V IH SEL pin Input High Voltage 1.65 -- 4.5 V SEL_V IL SEL pin Input Low Voltage -0.3 -- 0.3 V ION(Leakage) ON Pin Leakage Current 1 V ≤ ON ≤ 5 V or ON = GND -- - - 1 µA THERM ON Thermal Protection Shutdown Threshold -- 145 -- °C THERM OFF Thermal Protection Restart Threshold -- 125 -- °C Notes: 1. Refer to typical Timing Parameter vs. C SLEW performance charts for additional information. Electrical Characteristics (continued) 12 V ≤ V IN ≤ 24 V; C IN = 47 µF, T A = -40 °C to 85 °C, unless otherwise noted. Typical values are at T A = 25 °C Parameter Description Conditions Min. Typ. Max. Unit

Revision 1.04 Page 5 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation TTotal_ON , T ON_Delay and Slew Rate Measurement 90% V OUT 50% ON TON_Delay VOUT(SR) (V/ms) ON* VOUT TTotal_ON 10% V OUT 50% ON 10% V OUT TOFF_Delay TFALL 90% V OUT *Rise and Fall Times of the ON Signal are 100 ns

Revision 1.04 Page 6 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Typical Performance Characteristics RDS ON vs. Temperature and V IN IACL vs. Temperature and R SET

Revision 1.04 Page 7 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation IACL vs. R SET and V IN IOUT vs. MOSFET IDS and V IN

Revision 1.04 Page 8 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation IOUT vs. Temperature and MOSFET IDS VOUT Slew Rate vs. Temperature, V IN , and C SLEW

Revision 1.04 Page 9 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation TTotal_ON vs. C SLEW and V IN

Revision 1.04 Page 10 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Timing Diagram - Basic Operation including Active C urrent Limit Protection VIN ON Time LOW HIGH TFAULT HIGH VOUT IDS 90% 10% TON_Delay Active Current Limit Operation FAULT HIGH ISCL IACL ISCL IACL ON TFAULT LOW Nominal Steady State Operation Resumes ACL Threshold Triggered Abnormal Step Load Current Event TRISE

Revision 1.04 Page 11 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Timing Diagram - Active Current Limit & Thermal Pro tection Operation VOUT IDS 90% 10% TON_Delay Active Current Limit Operation Thermal Protection Operation ISCL IACL ISCL IACL TFAULT HIGH FAULT VIN ON Time LOW HIGH Nominal Steady State Operation Resumes TFAULT LOW Die temp > THERM ON Abnormal Step Load Current Event TRISE TTotal_ON Die temp < THERM OFF

Revision 1.04 Page 12 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Timing Diagram - Basic Operation including Active C urrent + Internal FET SOA Protection VIN ON Time LOW HIGH TFAULT HIGH VOUT IDS 90% 10% 0.2s TON_Delay Active Current Limit Operation FAULT HIGH ISCL IACL ISCL IACL ON TFAULT LOW ACL Threshold Triggered Nominal Steady State Operation resumes once overload condition is removed Automatic restart after 0.2s “cool off” delay and normal operation resumes if overload condition is removed FET SOA Threshold Triggered and FET is turned off ACL Threshold Triggered Abnormal Step Load Current Event SOA Threshold TRISE Decreasing R LOAD drops V OUT SOA Protection

Figure 25. Typical non-monotonic V OUT ramping waveform during power up on heavy load for V IN = 24 V,

Revision 1.04 Page 26 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Applications Information High Voltage GreenFET Safe Operating Area Explained Renesas’s High Voltage GreenFET load switches incor porate a number of internal protection features tha t prevents them from damaging themselves or any other circuit or subcirc uit downstream of them. One particular protection f eature is their Safe Operation Area (SOA) protection. SOA protection is automatically activated under overpower and, in som e cases, under overcurrent conditions. Overpower SOA is activated if package power dissipation exceeds an internal 10 W threshold and High Voltage GreenFET devices will quickly switch off (o pen circuit) upon overpower detection and automatic ally resume (close) nominal operation once overpower condition no longer exists. One of the possible ways to have an overpower condi tion trigger SOA protection is when High Voltage GreenFET products are enabled into heavy output resistive loads and/or into large load capacitors. It is under these conditions to follow carefully the “Safe Start-up Loading” guidance in the Applications section of the datasheet. During an overcurrent condition, High Voltage GreenFET devices will try to limit the output current to the level set by the external R SET resistor. Limiting the output current, however, causes an increased voltage drop across the FET’s channel because the FET’s RDS ON increased as well. Since the FET’s RDS ON is larger, package power dissipation also increases. If the resultant increase in package power dissipation is greater than or equal to 10 W, internal SOA protection will be triggered and the FET will open circuit (switch off). Every time SOA protection is triggered, all High Voltage GreenFET devices will automaticall y attempt to resume nominal operation after 160 ms. The automatic retry attempt only allows power-up with SOA at 5 W. This SOA fold back power ensures that the FET survives a short circuit condition. To clear the 5 W SOA fold back, switch the ON pin to “LOW” to power reset SOA to 10 W. Safe Start-up Condition SLG59H1017V has built-in protection to prevent over-heating during start-up into a heavy load. Overloading the VOUT pin with a capacitor and a resistor may result in non-monoto nic V OUT ramping ( Figure 25 ) or repeated restarts ( Figure 21 to Figure 24 ). In general, under light loading on VOUT, V OUT ramping can be controlled with C SLEW value. The following equation serves as a guide: where T RISE = Total rise time from 10% V OUT to 90% V OUT VIN = Input Voltage CSLEW = Capacitor value for CAP pin When capacitor and resistor loading on VOUT during start up, the following tables will ensure V OUT ramping is monotonic without triggering internal protection: Safe Start-up Loading for V IN = 12 V (Monotonic Ramp) Slew Rate (V/ms) CSLEW (nF) 2 CLOAD (µF) RLOAD (Ω) 1 33.3 500 8 2 16.7 250 8 3 11.1 160 8 4 8.3 120 8 5 6.7 100 8 CSLEW = TRISE VIN x 4.9 µA x 20

Revision 1.04 Page 27 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Note 2: Select the closest value tolerance capacitor. Setting the SLG59H1017V’s Active Current Limit Note 3: Active Current Limit accuracy is ±15% over voltage range and over temperature range. Configuring the SLG59H1017V for 12 V V IN Lockout Applications To configure the SLG59H1017V for conditioned 12 V ±10% V IN applications is simply a matter of connecting the SEL pin to GND as shown in Figure A. For other V IN lockout window applications, please consult Renesas for additional information. Safe Start-up Loading for V IN = 24 V (Monotonic Ramp) Slew Rate (V/ms) CSLEW (nF) 2 CLOAD (µF) RLOAD (Ω) 0.5 66.7 500 30 1.0 33.3 250 30 1.5 22.2 160 30 2.0 16.7 120 30 2.5 13.3 100 30 RSET (kΩ) Active Current Limit (A) 3 91 1 45 2 30 3 20 4.5 ON Charge Pump Linear Ramp Control State Machine (CL/SC Detection and Over Temperature Protection) Discharge CMOS Input 13.7V OVLO 10.2V UVLO GND OFF

12 V V IN

Figure A. 47 µF 22 µF CLOAD = C 5 + C 6VOUT Connect to System GPI RPU 100 k Ω RIOUT 84.5 kΩ CIOUT 180 pF FAULT IOUT CSLEW 10 nF RSET 30.1 kΩ SEL ON CAP RSET

12 V ±10%

47 µF 22 µF 0.1 µF VIN CIN = C 1 + C 2 + C 3

Revision 1.04 Page 28 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation

24 V V IN and 12 V V IN Lockout Window Thresholds

Shown in Figure B and Figure C are the two sets of V IN overvoltage/undervoltage lockout windows – one for conditioned 24 V ±5% V IN systems and the second for conditioned 12 V ±10% VIN systems. To avoid lockout threshold collision with nominal operation, the SLG59H1017V’s V IN(OVLO) min and V IN(UVLO) max thresholds were set 0.1 V correspondingly high er than the system’s nominal V IN max or lower than the system’s V IN min range. Power Dissipation The junction temperature of the SLG59H1017V depends on different factors such as board layout, ambient temperature, and other environmental factors. The primary contributor to the increase in the junction temperature of the SLG59H1017V is the power dissipation of its power MOSFET. Its power dissipation and the junction temperature in nominal operating mode can be calculated using the following equations: where: PD = Power dissipation, in Watts (W) RDS ON = Power MOSFET ON resistance, in Ohms (Ω) IDS = Output current, in Amps (A) and where: T J = Junction temperature, in Celsius degrees (°C) θJA = Package thermal resistance, in Celsius degrees per Watt (°C/W) TA = Ambient temperature, in Celsius degrees (°C) Figure B. Figure C. PD = RDS ON x I DS TJ = PD x θJA + T A

Revision 1.04 Page 29 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Power Dissipation (continued) In current-limit mode, the SLG59H1017V’s power diss ipation can be calculated by taking into account th e voltage drop across the load switch (V IN - V OUT ) and the magnitude of the output current in current-limit mode (I ACL ): where: PD = Power dissipation, in Watts (W) V IN = Input Voltage, in Volts (V) RLOAD = Load Resistance, in Ohms (Ω) IACL = Output limited current, in Amps (A) VOUT = R LOAD x I ACL PD = (V IN -V OUT ) x I ACL or PD = (V IN – (R LOAD x I ACL )) x I ACL

1. Since the VIN and VOUT pins dissipate most of the heat generated during high-load current operation, it is highly recommended
2. To minimize the effects of parasitic trace inductance on normal operation, it is recommended to connect input C IN and output
3. The GND pin should be connected to system analog or power ground plane.
4. 2 oz. copper is recommended for high current operation.

Figure 26. SLG59H1017V Evaluation Board

Revision 1.04 Page 32 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Package Top Marking System Definition 1017V Part Code Pin 1 Identifier WWNNN Date Code + LOT Code ARR Assembly + Rev. Code 1017V - Part ID Field WW - Date Code Field NNN - Lot Traceability Code Field 1 A - Assembly Site Code Field 2 RR - Part Revision Code Field 2 Note 1: Each character in code field can be alphanumeric A-Z and 0-9 Note 2: Character in code field can be alphabetic A-Z

Revision 1.04 Page 33 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Package Drawing and Dimensions 18 Lead TQFN Package 1.6 x 3 mm (Fused Lead) JEDEC MO-220, Variation WCEE

Revision 1.04 Page 34 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation SLG59H1017V 18-pin STQFN PCB Landing Pattern Note: All dimensions shown in micrometers ( µm)

Revision 1.04 Page 35 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation Tape and Reel Specifications Carrier Tape Drawing and Dimensions Recommended Reflow Soldering Profile Please see IPC/JEDEC J-STD-020: latest revision for reflow profile based on package volume of 2.64 mm 3 (nominal). More information can be found at www.jedec.org. Package Type # of Pins Nominal Package Size [mm] Max Units Reel & Hub Size [mm] Leader (min) Trailer (min) Tape Width [mm] Part Pitch [mm] per Reel per Box Pockets Length [mm] Pockets Length [mm] STQFN 18L 1.6x3mm 0.4P FC Green 18 1.6 x 3 x 0.55 3,000 3,000 178 / 60 100 400 100 400 8 4 Package Type Pocket BTM Length Pocket BTM Width Pocket Depth Index Hole Pitch Pocket Pitch Index Hole Diameter Index Hole to Tape Edge Index Hole to Pocket Center Tape Width A0 B0 K0 P0 P1 D0 E F W STQFN 18L 1.6x3mm 0.4P FC Green Refer to EIA-481 specification

Revision 1.04 Page 36 of 36 SLG59H1017V A 13.3 mΩ, 4 A Load Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output ©2022 Renesas Electronics Corporation

Revision History

2/2/2022 1.04 Updated Company name and logo Added SOA Protection Threshold to Features Fixed typos 10/17/2019 1.03 Updated Applications Info SOA Description Updated HFET Evaluation Board image 12/18/2018 1.02 Updated style and formatting Updated Charts Added Scopeshots Added Layout Guidelines Fixed typos 11/2/2017 1.01 Updated V IN Max and V IN(OVLO) Min Fixed typos and formatting 5/13/2016 1.00 Production Release

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