SLF65R170E7

SLP65R170E7 MSEMITEK | Alldatasheet

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Technical content

Features

• 22A, 650V, RDS(on) =170mΩ@VGS = 10 V - Low gate charge(typ. Qg = 30.2nC) - High ruggedness Ultra - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP65R170E7 / SLF65R170E7 Units VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25℃) 22 * A - Continuous (TC = 100℃) 12* A IDM Drain Current - Pulsed (Note 1) 57 * A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 985 mJ IAR Avalanche Current (Note 1) 4 A EAR Repetitive Avalanche Energy (Note 1) 1.62 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns MOSFET dv/dt 100 PD Power Dissipation (TC = 25℃) 36 W - Derate above 25℃ 0.29 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 260 ℃ 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter SLP65R170E7 / SLF65R170E7 Units RθJC Thermal Resistance, Junction-to-Case 3.5 ℃/W RθJS Thermal Resistance, Case-to-Sink Typ. - ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃/W * Drain current limited by maximum junction temperature. G S D General Description This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies. G D S TO-220C TO-220FG D S

Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1mA 650 -- -- V BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1mA,TJ = 150℃ 650 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 uA VDS =480 V, TC = 125℃ -- 2 -- uA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1.7mA 2.5 -- 4.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 10 A -- 150 170 mΩ Dynamic Characteristics Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 250KHz -- 1240 -- pF Coss Output Capacitance -- 34 -- pF Crss Reverse Transfer Capacitance -- -- -- pF Switching Characteristics td(on) Turn-On Delay Time VDS = 400 V, ID = 10 A, RG = 10 Ω,VGS = 10 V (Note 4, 5) -- 12 -- ns tr Turn-On Rise Time -- 8 -- ns td(off) Turn-Off Delay Time -- 53 -- ns tf Turn-Off Fall Time -- 10 -- ns Qg Total Gate Charge VDS = 400 V, ID = 10 A, VGS = 10 V (Note 4, 5) -- 30.2 -- nC Qgs Gate-Source Charge -- 5.8 -- nC Qgd Gate-Drain Charge -- 15.4 -- nC RG Gate Resistance f = 1MHz 1.3 Ω Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 22 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 57 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A -- -- 1.2 V trr Reverse Recovery Time VDD = 400 V, IS = 10A, -- 274 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/us (Note 4) -- 3.33 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=79mH IAS = ID, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD  ID di/dt  200A/us, VDD 400, Starting TJ = 25°C 4. Pulse Test : Pulse width  300us, Duty cycle  2% 5. Essentially independent of operating temperature

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Vin Vout 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd Vary tp to obtain required peak ID 10V VDDC LL VDS ID RG t p DUT VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG 3mA VGS Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Current Regulator R1 R2 EAS = LL IAS2---- BVDSS t p VDD IAS VDS (t) ID (t) Time

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS L I S DriverVGS RG Same Type as DUT VGS • dv/dt controlled by 밨G

• IS controlled by Duty Factor 밆? VDD 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period
• dv/dt controlled by RG
• ISD controlled by pulse period

OUTLINE UNIT mm DESIGNED Shawn Chen THIRD ANGLE SYSTEM DWGNO PAGE 1 OF 1 CHECKED VERSION Ver1.0 ISSUE DATE APPROVED

2.54±0.2 10.16±0.2 Φ3.18±0.2 1.3±0.2 12.57±0.2 0.8±0.2 12.95±0.4 0.5±0.1 4.70±0.2 2.54±0.2 6.68±0.3 2.76±0.2 15.87±0.3 NOTE： 1The plastic package is not marked as smooth surfaceRa=0.1;Subglossy surfaceRa=0.8 2.Undeclared tolerance±0.15,Unmarked filletRmax=0.25 TO-220F OUTLINE

The content specified herein is for the purpose of introducing Msemitek's products (here in after "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Msemitek does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). Msemitek shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although, Msemitek endeavors to improve the quality and reliability of it's products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions . Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Msemitek's product. The content specified herein is subject to change for improvement without notice. When using a Msemitek's product, be sure to obtain the latest specifications.