SLA5081

SLA5081 SANKEN | Alldatasheet

Document overview

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Technical content

(Ta=25°C) Symbol Unit VDSS 150 V VGSS +20, –10 V ID ±7A ID (pulse)*1 ±15 A EAS *2 100 mJ 5 (Ta=25°C, with all circuits operating, without heatsink) W 47 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 2.66 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C *1 : PW≤100µs, duty≤1% *2 : VDD =25V, L=3.4mH, ID =7A, unclamped, RG =50Ω , see Fig. E on page 15. SLA5081 External dimensionsA • • • SLA (15-pin) I Equivalent circuit diagram Absolute maximum ratings N-channel General purpose PT Ratings FET 1 FET 2 FET1 FET2 FET2 FET2 FET2

15 Pins 4, 5, 6 : NC

ID (A) VDS (V) 02468 1 0 VGS =2.0V 2.2V 2.4V 2.6V 3.0V 10V ID -VDS Characteristics (Typical) I D -VGS Characteristics (Typical) R DS(ON) -ID Characteristics (Typical) R DS(ON) -TC Characteristics (Typical) VGS (V) 01234 ID (A) –40 °CT C=125°C ID (A) 012 34567 100 R DS (ON) (mΩ ) VGS =10V TC (°C) R DS (ON) (mΩ ) 200 100 –40 0 50 100 150 (ID =3.5A) VGS=10V VDS (V) ID (A) 10V 2.8V 2.6V 2.4V 024 68 1 0 VGS =2.2V VGS (V) ID (A) Tc=125 01 23 4 (VDS =10V) –40 R DS (ON) (mΩ ) 200 150 100 01 2 345 6 7 ID (A) VG S=10V TC (°C) R DS (ON) (mΩ ) VGS=10V 500 400 200 100 300 –40 0 50 100 150 (ID =3.5A)

Electrical characteristics

Re (yfs)-ID Characteristics (Typical) Safe Operating Area (SOA) Capacitance-VDS Characteristics (Typical) IDR -VSD Characteristics (Typical) P T-Ta Characteristics ID (A) Re (yfs) (S) 125°C25°CTC=–40°C 100 0.1 0.05 0.1 1 7 (VDS =10V) VSD (V) IDR (A) 10V VGS =0V 0 0.5 1.0 1.5 VDS (V) (TC =25°C) ID (A) ID (pulse) MAX 1-Circuit Operation R DS (on) LIMITED 10ms (1shot) 1ms 100µs 0.5 0.1 0.05 0.01 0.5 1 5 10 50 200 100 VDS (V) 01 0 2 03 0 4 0 5 0 Capacitance (pF) 10000 1000 100 VGS =0V f=1MHz Ciss Coss Crss ID (A) Re (yfs) (S) TC=–40°C 0.5 0.3 0.05 0.1 0.5 1 5 7 125 25°C (VDS =10V) Capacitance (pF) Coss Crss 5000 500 1000 100 01 0 2 03 0 4 0 5 0 VDS (V) Ciss VGS =0V f=1MHz VSD (V) IDR (A) 10V VGS =0V 0 0.5 1.0 1.5 VDS (V) ID (A) 10ms (1shot) 1ms 100 µs 0.5 0.1 0.05 0.01 0.5 1 5 10 50 200 100 ID (pulse) MAX R DS (on) LIMITED (TC =25°C) 1-Circuit Operation 0 50 100 150 Ta (°C) PT (W) All Circuits Operating With Infinite H eatsink Without Heatsink R DS(ON) (Ta=25°C) FET 1 FET 2 Symbol Specification Unit Conditions Specification Unit Conditions min typ max min typ max V(BR)DSS 150 V I D =100µA, VGS =0V 150 V I D =100µA, VGS =0V IGSS ±100 nA V GS =20V, –10V ±100 nA V GS =20V, –10V IDSS 100 µAV DS =150V, VGS =0V 100 µAV DS =150V, VGS =0V VTH 1.0 2.0 V V DS =10V, ID =250µA 1.0 2.0 V V DS =10V, ID =250µA Re (yfs) 71 2 S V DS =10V, ID =3.5A 4 9 S V DS =10V, ID =3.5A 80 105 m Ω VGS =10V, ID =3.5A 150 200 m Ω VGS =10V, ID =3.5A 85 115 m Ω VGS =4V, ID =3.5A 170 230 m Ω VGS =4V, ID =3.5A Ciss 1600 pF V DS =10V, 870 pF V DS =10V Coss 380 pF f=1.0MHz, 320 pF f=1.0MHz Crss 90 pF V GS =0V 210 pF V GS =0V td (on) 35 ns I D =3.5A, 25 ns I D =3.5A tr 70 ns V DD 70V, 55 ns V DD 70V td (off) 125 ns R L=20Ω ,8 0 n s R L=20Ω tf 90 ns VGS =5V, see Fig.3 on page 16. 50 ns VGS =5V, see Fig.3 on page 16. VSD 1.0 1.5 V I SD =7A, VGS =0V 1.0 1.5 V I SD =7A, VGS =0V trr 320 ns I F=±100mA 500 ns I F=±100mA