SLA5022

SLA5022_06 SANKEN | Alldatasheet

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Characteristic curves (N-channel) R 1 R 2 OUT 1 OUT 2 OUT 3 5 12 VM (Ta=25°C) Symbol Ratings Unit VM 60 V IO ±6 (PW≤100ms) A IOP ±10 (PW≤1ms) A VGSS ±10 V IB –0.5 A 5 (Ta=25°C) 35 (Tc=25°C) θ j-a 25 °C/W θ j-c 3.57 °C/W VISO 1000 (Between fin and lead pin, AC)Vrms Tj 150 °C Tstg –40 to +150 °C PT W SLA5022 (Ta=25°C) Symbol Unit Conditions V(BR)DSS 60 V I D =250µA, VGS =0V IGSS ±500 nA V GS =±10V IDSS 250 µAV DS =60V, VGS =0V VTH 1.0 2.0 V V DS =10V, ID =250µA Re(yfs) 3.1 4.6 S V DS =10V, ID =4A 0.17 0.22 V GS =10V, ID =4A 0.25 0.30 V GS =4V, ID =4A C iss 400 pF V DS =25V, f=1.0MHz, C oss 160 pF V GS =0V ton 80 ns I D =4A, VDD =30V, toff 50 ns V GS =5V VSD 1.1 1.5 V I SD =4A, VGS =0V trr 150 ns I F=±100mA Specification min typ max R DS(ON) R 1: 3kΩ typ R2: 80Ω typ 02 1 0 VGS =3V 3.5V 46 8 10V VDS (V) ID (A) (VDS =10V) 25°C 125°C 01234 ID (A) VGS (V) TC =–40°C VGS =10V 00 17 1 0 0.1 0.2 0.3 ID (A) R DS (ON) (Ω ) 23456 89 0.3 0.05 0.5 1 VDS =10V 25°C 125 ID (A) Re (yfs) (S) 51 0 0.5 TC=–40°C 0.1 –40 0 50 100 150 0.1 0.2 0.3 0.4R DS (ON) (Ω ) TC (°C) VGS =10V (ID =2.5A) 0 1 02 03 04 05 0 100 1000 Ciss Coss Crss VDS (V) Capacitance (pF) 500 VGS =0V f=1MHz 0 0 1.0 1.5 VGS=0V IDR (A) VSD (V) 0.5 10V 0.5 0.1 1 5 10 50 100 (TC =25°C) ID (pulse) max 1ms 100 µs 10 ms (1shot) RDS (ON) LIMITED ID (A) VDS (V) 0.5 PNP Darlington + N-channel MOSFET 3-phase motor drive Absolute maximum ratings Electrical characteristics (Sink : N channel MOSFET) Ω I Equivalent circuit diagram External dimensionsA • • • SLA (12-pin) VDS -ID Characteristics (Typical) V GS -ID Temperature Characteristics (Typical) I DS -RDS(ON) Characteristics (Typical) ID -Re(yfs) Temperature Characteristics (Typical) T C -RDS(ON) Characteristics (Typical) V DS -Cpacitance Characteristics (Typical) VSD -IDR Characteristics (Typical) Safe Operating Area (SOA)

Characteristic curves (PNP) SLA5022 (Ta=25°C) Symbol Unit Conditions ICBO –10 µAV CB =–60V IEBO –1 –5m A V EB =–6V VCEO –60 V I C =–25mA hFE 2000 5000 12000 V CE =–4V, IC =–4A VCE (sat) –1.5 V VBE (sat) –2.0 V VFEC 2.0 V I FEC =4A trr 1.0 µsI F=±0.5A ton 1.0 µsV CC –25V, tstg 1.4 µsI C =–4A, tf 0.6 µsI B1=–IB2=–10mA fT 120 MHz V CE =–12V, IE=1A C ob 150 pF V CB =–10V, f=1MHz Specification min typ max Electrical characteristics (Source: PNP transistor) IC =–4A, IB=–10mA –12 –10 0 –2 –4 –6 IB=–10mA –1mA –0.5mA –2mA –3mA–5mA IC (A) VCE (V) 20000 10000 5000 1000 500 200 typ (VCE =–4V) hFE IC (A) 20000 10000 5000 1000 500 200 –0.1 –0.5 –1 –5 Ta=125 75°C 25°C –30°C –10 (VCE =–4V) hFE IC (A) –0.1 –0.5 –1 –5 –10 125°C 75°C 25°C –20 (IC / IB=1000) VCE (sat) (V) IC (A) Ta=–30°C –0.3 –0.5 IC =–2A IC =–4A IC =–8A VCE (sat) (V) IB (mA) 0 –1 –2 –3 –30 °CT a=125°C –12 –10 (VCE =–4V) IC (A) VBE (V) 0.5 1 5 10 50 100 500 1000 PW (mS) θch-c (°C / W) VCE (V) –100–50–10–3 –20IC (A) –0.5 –0.1 Single Pulse Without Heatsink T a=25°C 10ms 1ms 100 µs–10 0 50 100 150 Ta (°C) PT (W) With Silicone Grease Natural Cooling All Circuits Operating With Infinite Heatsink Without Heatsink IC -VCE Characteristics (Typical) h FE -IC Characteristics (Typical) h FE -IC Temperature Characteristics (Typical) VCE (sat)-IC Temperature Characteristics (Typical) V CE (sat)-IB Characteristics (Typical) I C -VBE Temperature Characteristics (Typical) θ j-a-PW Characteristics Safe Operating Area (SOA) P T-Ta Characteristics