SL74HC367N

SL74HC367 SLS | Alldatasheet

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Technical content

Hex 3-State Noninverting Buffer with Separate 2-Bit and 4-Bit Sections High-Performance Silicon-Gate CMOS The SL74HC367 is identical in pinout to the LS/ALS367. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs. This device is arranged into 2 -Bit and 4 -Bit sections, each having its own act ive-low Output Enable. When either of the enables is high, the affected buffer outputs are placed into high -impedance states. The SL74HC367 has noninverting outputs.

• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices

ORDERING INFORMATION

TA = -55° to 125° C for all packages PIN ASSIGNMENT FUNCTION TABLE Inputs Output Enable 1,Enable 2 A Y L L L L H H H X Z Z = high impedance X = don’t care LOGIC DIAGRAM PIN 16 =VCC PIN 8 = GND

MAXIMUM RATINGS* Symbol Parameter Value Unit VCC DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V VIN DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V VOUT DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V IIN DC Input Current, per Pin ±20 mA IOUT DC Output Current, per Pin ±35 mA ICC DC Supply Current, VCC and GND Pins ±75 mA PD Power Dissipation in Still Air, Plastic DIP+ 750 500 mW Tstg Storage Temperature -65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) 260 °C *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V VIN, VOUT DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V TA Operating Temperature, All Package Types -55 +125 °C tr, tf Input Rise and Fall Time (Figure 1) VCC =2.0 V VCC =4.5 V VCC =6.0 V 1000 500 400 ns This device contains protection circuitry to guard against damag e due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high -impedance circuit. For proper operation, V IN and VOUT should be constrained to the ran ge GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC). Unused outputs must be left open.

DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND) VCC Guaranteed Limit Symbol Parameter Test Conditions V 25 °C to -55°C ≤85 ≤125 Unit VIH Minimum High-Level Input Voltage VOUT= VCC-0.1 V IOUT≤ 20 µA 2.0 4.5 6.0 1.5 3.15 4.2 1.5 3.15 4.2 1.5 3.15 4.2 V VIL Maximum Low -Level Input Voltage VOUT=0.1 V IOUT ≤ 20 µA 2.0 4.5 6.0 0.3 0.9 1.2 0.3 0.9 1.2 0.3 0.9 1.2 V VOH Minimum High-Level Output Voltage VIN=VIH IOUT ≤ 20 µA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V VIN=VIH IOUT ≤ 6.0 mA IOUT ≤ 7.8 mA 4.5 6.0 3.98 5.48 3.84 5.34 3.7 5.2 VOL Maximum Low-Level Output Voltage VIN= VIL IOUT ≤ 20 µA 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V VIN= VIL IOUT ≤ 6.0 mA IOUT ≤ 7.8 mA 4.5 6.0 0.26 0.26 0.33 0.33 0.4 0.4 IIN Maximum Input Leakage Current VIN=VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA IOZ Maximum Three-State Leakage Current Output in High-Impedance State VIN= VIL or VIH VOUT=VCC or GND ICC Maximum Quiescent Supply Current (per Package) VIN=VCC or GND IOUT=0µA 6.0 8.0 80 160 µA

Figure 1. Switching Waveforms Figure 2. Switching Waveforms

Figure 3. Test Circuit Figure 4. Test Circuit