SL74HC251 SLS | Alldatasheet
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Technical content
8-Input Data Selector/Multiplexer with 3-State Outputs High-Performance Silicon-Gate CMOS The SL74HC251 is identical in pinout to the LS/ALS251. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs. The device selects one of the eight binary Data Inputs, as determined by the Address Inputs. The Output Enable pin must be at a low level for the selected data to appear at the outputs. If Output Enable is high, the Y and the Y outputs are in the high -impedance state. This 3-State feature allows the IN74HC251 to be used in bus -oriented systems.
- Outputs Directly Interface to CM OS, NMOS, and TTL
- Operating Voltage Range: 2.0 to 6.0 V
- Low Input Current: 1.0 µA
- High Noise Immunity Characteristic of CMOS Devices
ORDERING INFORMATION
TA = -55° to 125° C for all packages PIN ASSIGNMENT FUNCTION TABLE Inputs Outputs A2 A1 A0 OE Y Y X X X H Z Z L L L L D0 D0 L L H L D1 D1 L H L L D2 D2 L H H L D3 D3 H L L L D4 D4 H L H L D5 D5 H H L L D6 D6 H H H L D7 D7 D0,D1...D7=the level of the respective D input Z = high-impedance state X = don’t care LOGIC DIAGRAM PIN 16 =VCC PIN 8 = GND
MAXIMUM RATINGS* Symbol Parameter Value Unit VCC DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V VIN DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V VOUT DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V IIN DC Input Current, per Pin ±25 mA IOUT DC Output Current, per Pin ±50 mA ICC DC Supply Current, VCC and GND Pins ±75 mA PD Power Dissipation in Still Air, Plastic DIP+ 750 500 mW Tstg Storage Temperature -65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) 260 °C *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V VIN, VOUT DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V TA Operating Temperature, All Package Types -55 +125 °C tr, tf Input Rise and Fall Time (Figure 1) VCC =2.0 V VCC =4.5 V VCC =6.0 V 1000 500 400 ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high -impedance circuit. For proper operation, V IN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC). Unused outputs must be left open.
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND) VCC Guaranteed Limit Symbol Parameter Test Conditions V 25 °C to -55°C ≤85 ≤125 Unit VIH Minimum High-Level Input Voltage VOUT=0.1 V or VCC-0.1 V IOUT≤ 20 µA 2.0 4.5 6.0 1.5 3.15 4.2 1.5 3.15 4.2 1.5 3.15 4.2 V VIL Maximum Low -Level Input Voltage VOUT=0.1 V or VCC-0.1 V IOUT ≤ 20 µA 2.0 4.5 6.0 0.3 0.9 1.2 0.3 0.9 1.2 0.3 0.9 1.2 V VOH Minimum High-Level Output Voltage VIN=VIH or VIL IOUT ≤ 20 µA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V VIN=VIH or VIL IOUT ≤ 4.0 mA IOUT ≤ 5.2 mA 4.5 6.0 3.98 5.48 3.84 5.34 3.7 5.2 VOL Maximum Low-Level Output Voltage VIN=VIH or VIL IOUT ≤ 20 µA 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V VIN=VIH or VIL IOUT ≤ 4.0 mA IOUT ≤ 5.2 mA 4.5 6.0 0.26 0.26 0.33 0.33 0.4 0.4 IIN Maximum Input Leakage Current VIN=VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA IOZ Maximum Three-State Leakage Current Output in High-Impedance State VIN= VIL or VIH VOUT=VCC or GND ICC Maximum Quiescent Supply Current (per Package) VIN=VCC or GND IOUT=0µA 6.0 8.0 80 160 µA
Figure 1. Switching Waveforms Figure 2. Switching Waveforms