SL74HC03 SLS | Alldatasheet
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Technical content
Quad 2-Input NAND Gate with Open-Drain Outputs High-Performance Silicon-Gate CMOS The SL74HC03 is identical in pinout to the LS/ALS03. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs. The SL74HC03 NAND gate has, as its output, a high -performance MOS N -Channel transistor. This NAND gate can, therefore, with a suitable pullup resistor, be used in wired -AND applications.
- Outputs Directly Interface to CMOS, NMOS, and TTL
- Operating Voltage Range: 2.0 to 6.0 V
- Low Input Current: 1.0 µA
- High Noise Immunity Characteristic of CMOS Devices
ORDERING INFORMATION
TA = -55° to 125° C for all packages LOGIC DIAGRAM PIN 14 =VCC PIN 7 = GND PIN ASSIGNMENT FUNCTION TABLE Inputs Output A B Y L L Z L H Z H L Z H H L Z= High Impedance
MAXIMUM RATINGS* Symbol Parameter Value Unit VCC DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V VIN DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V VOUT DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V IIN DC Input Current, per Pin ±20 mA IOUT DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air, Plastic DIP+ 750 500 mW Tstg Storage Temperature -65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) 260 °C *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V VIN, VOUT DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V TA Operating Temperature, All Package Types -55 +125 °C tr, tf Input Rise and Fall Time (Figure 1) VCC =2.0 V VCC =4.5 V VCC =6.0 V 1000 500 400 ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage h igher than maximum rated voltages to this high -impedance circuit. For proper operation, V IN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC). Unused outputs must be left open.
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND) VCC Guaranteed Limit Symbol Parameter Test Conditions V 25 °C to -55°C ≤85 ≤125 Unit VIH Minimum High-Level Input Voltage VOUT=0.1 V or VCC-0.1 V IOUT≤ 20 µA 2.0 4.5 6.0 1.5 3.15 4.2 1.5 3.15 4.2 1.5 3.15 4.2 V VIL Maximum Low -Level Input Voltage VOUT=0.1 V or VCC-0.1 V IOUT ≤ 20 µA 2.0 4.5 6.0 0.5 1.35 1.8 0.5 1.35 1.8 0.5 1.35 1.8 V VOL Maximum Low-Level Output Voltage VIN=VIH IOUT ≤ 20 µA 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V VIN=VIH IOUT ≤ 4.0 mA IOUT ≤ 5.2 mA 4.5 6.0 0.26 0.26 0.33 0.33 0.4 0.4 IIN Maximum Input Leakage Current VIN=VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA ICC Maximum Quiescent Supply Current (per Package) VIN=VCC or GND IOUT=0µA 6.0 1.0 10 40 µA IOZ Maximum Three-State Leakage Current Output in High-Impedance State VIN= VIL or VIH IOUT= VCC or GND
AC ELECTRICAL CHARACTERISTICS(CL=50pF,Input tr=tf=6.0 ns) VCC Guaranteed Limit Symbol Parameter V 25 °C to -55°C ≤85°C ≤125°C Unit tPLZ, tPZL Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2) 2.0 4.5 6.0 120 150 180 ns tTHL Maximum Output Transition Time, Any Output (Figures 1 and 2) 2.0 4.5 6.0 110 ns CIN Maximum Input Capacitance - 10 10 10 pF COUT Maximum Three-State Output Capacitance (Output in High-Impedance State) - 10 10 10 pF Power Dissipation Capacitance (Per Gate) Typical @25°C,VCC=5.0 V CPD Used to determine the no -load dynamic power consumption: PD=CPDVCC 2f+ICCVCC 8.0 pF .Figure 1. Switching Waveforms Figure 2. Test Circuit EXPANDED LOGIC DIAGRAM (1/4 of the Device)
- Denotes open -drain outputs