SL6619TP1N

SL6619 ZARLINK | Alldatasheet

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1V regulator control external PNP drive 1V regulator output voltage I channel pre-gyrator filter test point. Mixer output, I channel Mixer output, I channel Positive supply 1 LO input channel I Gyrator current adjust pin LO input channel Q Mixer output, Q channel Mixer output, Q channel Q channel pre-gyrator filter test point Reference voltage AFC output Battery economy control Data output pin Positive supply 2 Battery flag output AFC characteristic defining pin AFC characteristic defining pin Bit rate filter control Bit rate filter 1, output from detector Battery flag input voltage I channel limiter (post gyrator filter) test point, output only Audio AGC output current Audio AGC time constant adjust Audio AGC gain and threshold adjust. RSSI signal indicator Pin description Table 1 - SL6619 pin descriptions

Electrical Characteristics (1) Electrical Characteristics (1) are guaranteed over the following range of operating conditions unless otherwise stated TAMB = 125°C, VCC1 = 1·3V, VCC2 = 2·7V 0·95 1·9 1·20 260 0·95 0·25 375 1·15 7:9 VCC220·3V 21·0 21·0 1·04 1·0 21·0 21·0 Characteristic Value Typ. Max.Min. VCC1<VCC220·8V Including IRF ILOAD = 3mA, external PNP(b>100, VCE = 0·1V) External PNP (hFE>100, VCE = 0·1V) PTAT, voltage on pin 1 = 0·3V and 1·3V Typical temperature coefficient = 10·1mV/°C Output logic low, pin 21 voltage = 0·3V Output logic high, pin 21 voltage = V CC2 Preamble at 1200 baud, Df = 4kHz, pin 26 = 0V, BRF capacitor = 560pF, DATA OP pullup resistor = 200kΩ Pin 20 = logic low Pin 20 = logic low Powered up Powered down Powered up Powered down Current sunk by pin 23 = 1µA Pin 28 voltage = 1·04V Pin 28 voltage = 1·12V Pin 28 voltage = 1·14V V BATT = 1·14V VBATT = 1·04V V V mA µA V mA µA V µA µA µA µA µA µA V V µA µA V µA µA µA V µA µA 2·7 3·5 2·2 460 1·05 700 1·31 1·0 1·0 9:7 V CC2 0·3 1·0 1·0 1·12 1·0 2·0 1·0 1·0 1·3 2·7 1·60 350 1·0 500 1·25 0·5 2·0 1·08 ConditionsUnits Supply voltage, VCC1 Supply voltage, VCC2 Supply current, ICC1 Supply current, ICC2 1 volt regulator, VREG 1 volt regulator load current LNA current source, IRF Reference voltage, V REF VREF source current VREF sink current Data Amplifier DATA OP sink current DATA OP leakage current Output mark:space ratio Battery Economy Power down I CC1 Power down ICC2 BEC input logic high BEC input logic low BEC input current BEC input current Battery Flag V BATT trigger point BATT FLAG sink current BATT FLAG sink current BATT FLAG sink current V BATT input voltage VBATT input current VBATT input current Pin

Electrical Characteristics (1) (Cont.) Electrical Characteristics (1) are guaranteed over the following range of operating conditions unless otherwise stated TAMB = 125°C, VCC1 = 1·3V, VCC2 = 2·7V Characteristic Value Typ.Min. LO inputs (12, 14) driven in quadrature: 45mVrms at 450MHz, CW. Mixer inputs (3, 5) driven differentially: 0·45mVrms at 450·004MHz, CW. As gain to TPI As gain toTPI TPI, TPQ signals limiting No signal applied f C = fLO14·5kHz, CW fC = fLO12·5kHz, CW fC = fLO16·5kHz, CW 2400 baud 1200 baud 512 baud Pin 26 logic high Pin 26 logic low Pin 26 logic tristate (open circuit) V CC1 0·0 IAFC4k5 10·7 IAFC4k5 20·9 3·5 1·7 0·74 Conditions Mixers LO DC bias voltage Gain to TPI Gain to TPQ Match of gain to TPI and TPQ Audio AGC IAGC OP max. sink current IAGC OP leakage current AFC AFC DC current, I AFC4k5 AFC DC current AFC DC current Bit Rate Filter Control BRF CNT input logic high BRF CNT input logic low Tristate I/P current window BRF 1 output current BRF 1 output current BRF 1 output current BRF CNT input high current BRF CNT input low current Pin 12,14 3,5,8,12 3,5,14, 3,5,8, 12,14,17 IAFC4k5 10·2 VCC2 20·3 20·4 27·5 27·5 Max. IAFC4k5 20·2 VCC2 0·1 10·4 17·5 17·5 V dB dB dB µA µA µA µA µA V V µA µA µA µA µA µA Units

Electrical Characteristics (2) Electrical Characteristics (2) are guaranteed over the following range of operating conditions unless otherwise stated. Characteristics are tested at room temperature only and are guaranteed by characterisation test or design. TAMB = 210°C to 155°C, VCC1 = 1·4V to 2·0V, VCC2 = 2·3V to 3·2V. VCC1,VCC220·8V 0·95 1·9 0·93 0·25 375 1·13 7:9 VCC220·3V 21·0 21·0 1·04 21·5 21·5 Characteristic Value Typ. Max.Min. VCC1<VCC220·8V at >25°C only Including IRF ILOAD = 3mA, external PNP(b>100, VCE = 0·1V) External PNP(hFE>100, VCE = 0·1V) PTAT, voltage on pin 1 = 0·3V and 1·3V Typical temperature coefficient = 10·1mV/°C Stable data O/P when 3dB above sensitivity. C VREF = 2·2µF Fall to 10% of steady state ICC1. CVREF = 2·2µF Output logic low, pin 21 voltage = 0·3V Output logic high, pin 21 voltage = V CC2 Preamble at 1200 baud, Df = 4kHz, pin 26 = 0V, BRF capacitor = 560pF, DATA OP pullup resistor = 200kΩ Pin 20 = logic low Pin 20 = logic low Powered up Powered down Powered up Powered down Current sunk by pin 23 = 1µA Pin 28 voltage = 1·04V Pin 28 voltage = 1·12V Pin 28 voltage = 1·14V V BATT = 1·14V VBATT = 1·04V V V mA µA V mA µA V µA µA ms ms µA µA µA µA V V µA µA V µA µA µA V µA µA 2·7 3·5 2·4 510 1·05 800 1·33 0·8 1·5 9:7 V CC2 0·3 1·5 1·5 1·12 2·0 1·5 1·5 1·3 2·7 1·60 350 1·0 500 1·25 0·5 2·0 1·08 ConditionsUnits Supply voltage, VCC1 Supply voltage, VCC2 Supply current, ICC1 Supply current, ICC2 1 volt regulator, VREG 1 volt regulator load current LNA current source, IRF Reference voltage, V REF VREF source current VREF sink current Turn-on time Turn-off time Data Amplifier DATA OP sink current DATA OP leakage current Output mark:space ratio Battery Economy Power down I CC1 Power down ICC2 BEC input logic high BEC input logic low BEC input current BEC input current Battery Flag V BATT trigger point BATT FLAG sink current BATT FLAG sink current BATT FLAG sink current V BATT input voltage VBATT input current VBATT input current Pin

Electrical Characteristics (2) (Cont.) Electrical Characteristics (2) are guaranteed over the following range of operating conditions unless otherwise stated. Characteristics are tested at room temperature only and are guaranteed by characterisation test or design. TAMB = 210°C to 155°C, VCC1 = 1·4V to 2·0V, VCC2 = 2·3V to 3·2V. VCC1,VCC220·8V Characteristic Value Typ.Min. LO inputs (12, 14) driven in quadrature: 45mVrms at 450MHz, CW. Mixer inputs (3, 5) driven differentially: 0·45mVrms at 450·004MHz, CW. As gain to TPI As gain toTPI TPI, TPQ signals limiting No signal applied f C = fLO14·5kHz, CW fC = fLO12·5kHz, CW fC = fLO16·5kHz, CW 2400 baud 1200 baud 512 baud Pin 26 logic high Pin 26 logic low Pin 26 logic tristate (open circuit) V CC1 0·0 IAFC4k5 10·7 IAFC4k5 20·9 3·5 1·7 0·74 Conditions Mixers LO DC bias voltage Gain to TPI Gain to TPQ Match of gain to TPI and TPQ Audio AGC IAGC OP max. sink current IAGC OP leakage current AFC AFC DC current, I AFC4k5 AFC DC current AFC DC current Bit Rate Filter Control BRF CNT input logic high BRF CNT input logic low Tristate I/P current window BRF 1 output current BRF 1 output current BRF 1 output current BRF CNT input high current BRF CNT input low current Pin 12,14 3,5,8,12 3,5,14, 3,5,8, 12,14,17 21·5 IAFC4k5 10·1 VCC2 20·3 20·4 210 210 Max. 11·5 IAFC4k5 20·1 VCC2 0·1 10·4 110 110 V dB dB dB µA µA µA µA µA V V µA µA µA µA µA µA Units

Receiver Characteristics (450MHz) Receiver Characteristics (450MHz) are guaranteed over the following range of operating conditions unless otherwise stated. Characteristics are not tested but are guaranteed by characterisation test or design. All measurements made using the characterisation circuit Fig. 5. See Application Note AN137 for details of test method. TAMB = 210°C to 155°C, VCC1 = 1·04V to 2·0V, VCC2 = 2·3V to 3·2V, VCC1,VCC220·8V, carrier frequency = 450MHz, BER = 1 in 30, AFC open loop. LNA gain set such that an RF signal of273dBm at the LNA input, offset from the LO by 4kHz, gives a typical IF signal level of 300mV p-p at TPI and TPQ. LNA noise figure,2dB Characteristic 512bps, Df = 4·5kHz 1200bps, Df = 4·0kHz 2400bps, Df = 4·5kHz. LO = 215dBm 512bps, Df = 4·5kHz 1200bps, Df = 4·0kHz 2400bps, Df = 4·5kHz. LO = 215dBm. Channel spacing 25kHz 512bps, Df = 4·5kHz 1200bps, Df = 4·0kHz 2400bps, Df = 4·5kHz. LO = 215dBm. Channel spacing 25kHz 512bps, Df = 4·5kHz, no AFC 512bps, Df = 4·5kHz, no AFC 1200bps, Df = 4·0kHz, no AFC 1200bps, Df = 4·0kHz, no AFC 2400bps, Df = 4·5kHz, no AFC 2400bps, Df = 4·5kHz, no AFC 512bps, Df = 4·5kHz, no AFC 1200bps, Df = 4·0kHz, no AFC 2400bps, Df = 4·5kHz, no AFC 512bps, Df = 4·5kHz. All at sensitivity 13dB or above 1200bps, Df = 4·0kHz. All at sensitivity 13dB or above 2400bps, Df = 4·5kHz. All at sensitivity 13dB or above Conditions Sensitivity Intermodulation, IM3 Adjacent Channel Deviation Acceptance Up Down Up Down Up Down Centre Frequency Acceptance AFC Capture Range (AFC Closed Loop) Value Typ.Min. 2128 2126 2123 11·9 22·5 13·0 22·3 12·5 22·3 62·8 62·5 62·5 63·5 62·5 11·8 22·7 11·7 62·0 62·0 Max. dBm dBm dBm dB dB dB dB dB dB kHz kHz kHz kHz kHz kHz kHz kHz kHz kHz kHz kHz Units 2122 2119 14·6 21·7 14·6 21·7 62·9 63·2

Receiver Characteristics (280MHz) Receiver Characteristics (280MHz) are guaranteed over the following range of operating conditions unless otherwise stated. Characteristics are not tested but are guaranteed by characterisation test or design. All measurements made using the characterisation circuit Fig. 5. See Application Note AN137 for details of test method. TAMB = 210°C to 155°C, VCC1 = 1·04V to 2·0V, VCC2 = 2·3V to 3·2V, VCC1,VCC220·8V, carrier frequency = 280MHz, BER = 1 in 30, AFC open loop. LNA gain set such that an RF signal of273dBm at the LNA input, offset from the LO by 4kHz, gives a typical IF signal level of 300mV p-p at TPI and TPQ. LNA noise figure,2dB Characteristic 512bps, Df = 4·5kHz 1200bps, Df = 4·0kHz 2400bps, Df = 4·5kHz. LO = 215dBm 512bps, Df = 4·5kHz 1200bps, Df = 4·0kHz 2400bps, Df = 4·5kHz. LO = 215dBm. Channel spacing 25kHz 512bps, Df = 4·5kHz 1200bps, Df = 4·0kHz 2400bps, Df = 4·5kHz. LO = 215dBm. Channel spacing 25kHz 512bps, Df = 4·5kHz, no AFC 512bps, Df = 4·5kHz, no AFC 1200bps, Df = 4·0kHz, no AFC 1200bps, Df = 4·0kHz, no AFC 2400bps, Df = 4·5kHz, no AFC 2400bps, Df = 4·5kHz, no AFC 512bps, Df = 4·5kHz, no AFC 1200bps, Df = 4·0kHz, no AFC 2400bps, Df = 4·5kHz, no AFC 512bps, Df = 4·5kHz. All at sensitivity 13dB or above 1200bps, Df = 4·0kHz. All at sensitivity 13dB or above 2400bps, Df = 4·5kHz. All at sensitivity 13dB or above 512bps, Df = 4·5kHz 1200bps, Df = 4·0kHz 2400bps, Df = 4·5kHz. LO = 215dBm Conditions Sensitivity Intermodulation, IM3 Adjacent Channel Deviation Acceptance Up Down Up Down Up Down Centre Frequency Acceptance AFC Capture Range (AFC Closed Loop) 1MHz Blocking Value Typ.Min. 2129 2127 2124 53·5 11·9 22·5 13·0 22·3 12·5 22·3 62·8 62·5 62·5 63·5 2128 2127 62·5 11·8 22·7 11·7 23·0 62·0 62·0 Max. dBm dBm dBm dB dB dB dB dB dB kHz kHz kHz kHz kHz kHz kHz kHz kHz kHz kHz kHz dB dB dB Units 2124 2121 14·6 21·7 14·6 21·7 62·9 63·2

To achieve optimum performance it is necessary to incor- porate a Low Noise RF Amplifier at the front end of the receiver. This is easily biased using the on-chip voltages and current source provided. All voltages and current sources used for bias of the RF amplifier, receiver and mixers should be RF decoupled using 1nF capacitors. The receiver also requires a stable Local Oscillator at the required channel frequency. Local Oscillator The Local Oscillator signal is applied to the device in phase quadrature. This can be achieved with the use of two RC networks operating at their 23dB/45° transfer character- istic. The RC characteristics for I and Q channels are com- bined to give a full 90° phase differential between the LO ports of the device. Each LO port also requires an equal level of drive from the oscillator. This is achieved by forming the two RC networks into a power divider. Gyrator Filters The on-chip filters include an adjustable gyrator filter. This may be adjusted by changing the value of the resistor con- nected between pin 13 and GND. This allows adjustment of the filters’ cutoff frequency and allows for compensation for possible process variations. Audio AGC (Fig. 3) The Audio AGC consists of a current sink which is control- led by the audio (baseband) signal. It has three parameters that may be controlled by the user. These are the attack (turn on ) time, decay (duration) time and threshold level. The attack time is simply determined by the value of the external capacitor connected to TCADJ. The external capacitor is in series with an internal 100k Ω resistor and the time constant of this circuit dictates the attack time of the AGC. i.e. t ATTACK = 100kΩ3C18 The decay time is determined by the external resistor connected in parallel with the capacitor CTC. The decay time is simply t DECAY = R173C18 When a large audio (baseband) signal is incident on the input to the AGC circuit, the variable current source is turned on. This causes a voltage drop across R13. The voltage potential between V REF and the voltage on pin 31 causes a current to flow in pin 30. This charges up C18 through the 100kΩ internal resistor. As the voltage across the capacitor increases, a current source is turned on and this sinks current from pin 32. The current sink on pin 32 can be used to drive the external AGC circuit by causing a PIN diode to conduct, reducing the signal to the RF amplifier. RF AGC The RF AGC is an automatic gain control loop that protects the mixer’s RF inputs, Pins 3 and 5, from large out of band RF signals. The loop consists of an RF received signal strength indicator which detect the signal at the inputs of the mixers. This RSSI signal is then used to control the LNA current source (pin 1). Regulator The on-chip regulator should be used in conjunction with a suitable PNP transistor to achieve regulation. As the transis- tor forms part of the regulator feedback loop the transistor should exhibit the following characteristics: H FE.100 for VCE. = 0·1V If no external transistor is used, the maximum current sourcing capability of the regulator is limited to 30 µA. Automatic Frequency Control (Fig. 4) The Automatic Frequency Control consists of a detection circuit which gives a current output at AFC OP whose magni- tude and sign is a function of the difference between the local oscillator (f LO) and carrier frequencies (fC). This output current is then filtered by an off-chip integrating capacitor. The integrator’s output voltage is used to control a voltage control crystal oscillator. This closes the AFC feedback loop giving the automatic frequency control function. For an FSK modu- lated incoming RF carrier, the AFC OP current’s polarity is positive, i.e.current is sourced for f LO,fC,fLO14kHz and magnitude of the AFC OP current is a function of frequency offset and the transmitted data’s bit stream. If the carrier frequency, (f C), equals the local oscillator frequency, (f LO) then the magnitude of the current is zero. BIT RATE FILTER CONTROL The logic level on pin 26 controls the cutoff frequency of the 1st order bit rate for a given bit rate filter capacitor at pin 27. This allows the cutoff frequency to be changed between f C, 2f C and 0·43f C through the logic level on pin 26. This function is achieved by changing the value of the current in the 4f detector’s output stage. A logic zero (0V to 0·1V) on pin 26 gives a cutoff frequency of f C a logic one (VCC220·3V to VCC2) gives a cut off frequency of 2f C and an open circuit at pin 26 gives a cutoff frequency of 0·43f C.

V REG TPI 9 1 01 11 21 31 41 51 6 32 31 30 29 28 27 26 25 AFC1 BATT FLAG V CC2 DATA OP BEC AFC OP V REF TPQ V CC1 LOIP I GYR I LOIP Q GTH ADJ TC ADJ IAGC OP TP LIM I VBATT BRF1 BRF CNT AFC2 VCC1R13 R17 C18 VCC1 C34 VREF VCC1 TP LIM I BRF CNT C27 R10 C22 R11 C21 C23 C24 C16 C17 VCC1 VCC2 VCC1 VCC2 DATA OP BEC AFC OP VREF C15 C30 R15 R16 C19 C20 TO TR2 C25 C26 VCC1 TR3 C6 C33 VCC1 T1VC1R3 FROM IRF (PIN 1) VREF VREG TR1 TR2 C2C1 L1RF IN R12 C28 VREG VREG C9 C10 R14 C12 EXT LO C11R4 C13 C6 C33 C32C29 VCC1 C14 Figure 5 - SL6619 characterisation circuit (see Tables 3 and 4 for component values) SL6619

Resistors Capacitors Capacitors (cont.) Inductors L1 56nH T1 30nH 1:1, Coilcraft M1686-A Transistors TR1 Toshiba 2SC5065 TR2 Toshiba 2SC5065 TR3 FMMT589 (Zetex ZTX550) R1 4·7k Ω R2 4·7k Ω R3 2k Ω R4 100 Ω R5 100 Ω R6 100 Ω R7 100 Ω R8 430k Ω R9 220k Ω R10 S/C R11 15k Ω R12 2k Ω R13 33k Ω R14 180k Ω R15 430k Ω R16 220k Ω R17 220k Ω C1 12pF C2 O/C C3 220nF C4 1nF C5 1nF C6 1nF C7 1nF C8 3·3pF C9 4·7nF C10 4·7nF C11 4·7pF C12 5·6pF C13 1nF C14 1nF C15 1nF C16 1nF C17 2·2 µF C18 100nF C19 1nF C20 2·2 µF C21 1·5nF C22 560pF C23 1nF C24 2·2 µF C25 100nF C26 100nF C27 560pF C28 1nF C29 1nF C30 1nF C32 100nF C33 100nF C34 100nF VC1 3-10pF Table 3 - Component list for 280MHz characterisation board Table 4 - Component list for 450MHz characterisation board Resistors Capacitors Capacitors (cont.) Inductors L1 47nH T1 16nH 1:1, Coilcraft Q4123-A Transistors TR1 Philips BFT25A TR2 Philips BFT25A TR3 FMMT589 (Zetex ZTX550) R1 4·7k Ω R2 4·7k Ω R3 1·8k Ω R4 100 Ω R5 100 Ω R6 100 Ω R7 100 Ω R8 430k Ω R9 220k Ω R10 S/C R11 15k Ω R12 2k Ω R13 33k Ω R14 180k Ω R15 430k Ω R16 220k Ω R17 220k Ω C1 O/C C2 O/C C3 1nF C4 1nF C5 1nF C6 1nF C7 1nF C8 3·3pF C9 4·7nF C10 4·7nF C11 3·9pF C12 3·3pF C13 1nF C14 1nF C15 1nF C16 1nF C17 2·2 µF C18 100nF C19 1nF C20 2·2 µF C21 1·5nF C22 560pF C23 1nF C24 2·2 µF C25 100nF C26 100nF C27 560pF C28 1nF C29 1nF C30 1nF C32 100nF C33 100nF C34 100nF VC1 3-10pF

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