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Formosa MSSL22-MH1 THRU SL24-MH1 List Chip RectifierLow VF Schottky Barrier http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. DS-12165G 2014/03/21 - A 7

Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, l Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228

Features

ow forward voltage drop. High surge capability. Guardring for overvoltage protection.  Suffix "-H" indicates Halogen free parts, ex. SL22-MH1-H. Page 2 Formosa MS http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. 2.0A Surface Mount Schottky Barrier Rectifiers - 20V-40V Low VF Chip RectifierLow VF Schottky Barrier Maximum ratings and Electrical Characteristics (AT T =25A o C unless otherwise noted) Notes 1: Measured at 1 0 MHz and applied reverse voltage of 4.0 Volts. Peak forward surge current 8 3ms single half sine wave.- Maximum instantaneous forward voltage at I 2 0A=.F Maximum average forward rectified current Maximum repetitive peak reverse voltage Operating junction temperature range Typical junction capacitance Note 1() Maximum DC reverse current Maximum DC blocking voltage at rated DC blocking voltage Storage temperature range Maximum RMS voltage ()JEDEC Method PARAMETER TJ =25 °C SYMBOLS TSTG VDC VRRM IFSM VRMS IO VF IR CJ TJ SL22-MH1 0.38 -+55 to 150 -+55 to 100 SL23-MH1 2.0 1.0 160 0.40 SL24-MH1 0.40 UNITS Volts Volts Volts Volts Amps Amps mA pF Mechanical data Epoxy : UL94-V0 rated flame retardant Case : Molded plastic, Terminals :Plated terminals, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any SOD-123H1 Weight : Approximated 0.0103 gram DS-12165G 2014/03/21 - A 7 SL22-MH1 THRU SL24-MH1 Package outline Dimensions in inches and (millimeters) SOD-123H1 0.031(0.8) Typ. 0.146(3.7) 0.130(3.3) 0.004(0.1) Typ. 0.031(0.8) Typ. 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6)

Rating and characteristic curves (SL22-MH1 THRU SL24-MH1) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FOR WARD CURRENT ,(A) FIG.5-TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE,(V) JUNCTION CAP ACITANCE,(pF) 0.4 0.8 1.2 1.6 2.0 2.4 350 300 250 200 150 100 .01 .05 .1 .5 1 5 10 50 100 LEAD TEMPERATURE ( C)° 0 20 40 60 80 100 120 140 160 180 200 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. 100 1000 FIG.3 - TYPICAL REVERSE CHARACTERISTICS REVERSE LEAKAGE CURRENT , (mA) PERCENTAGE RATED PEAK REVERSE VOLTAGE,(%) 0 20 40 60 80 100 120 140 T =75 CJ T =25 CJ 0.1 1.0 .01 FIG.1-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FOR WARD CURRENT ,(A) FORWARD VOLTAGE,(V) Pulse Width 300us 1% Duty Cycle

3.0 SL22-MH1

SL23-MH1~ SL24-MH1 T =25 CJ FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FOR WAARD SURGE CURRENT ,(A) NUMBER OF CYCLES AT 60Hz 11 0 5 50 100 T =25 CJ 8.3ms Single Half Sine Wave JEDEC method DS-12165G 2014/03/21 - A 7

Pin Simplified outline Symbol Marking Type number Marking code SL22-MH1 L22 SL23-MH1 L23 SL24-MH1 L24 Suggested solder pad layout Dimensions in inches and (millimeters) A C B B 0.051 (1.30) A 0.071 (1.80) C 0.067 (1.70) PACKAGE SOD-123H1 Page 4 Formosa MS http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. Chip RectifierLow VF Schottky Barrier DS-12165G 2014/03/21 - A 7 SL22-MH1 THRU SL24-MH1

unit:mm E B d F W PA D D1D2 C T Page 5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Item Tolerance SOD-123H1 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width P E B C d F T W P A D D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 2.00 3.85 1.10 Formosa MS http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. Chip RectifierLow VF Schottky Barrier DS-12165G 2014/03/21 - A 7 SL22-MH1 THRU SL24-MH1

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Reel packingReel packing SOD-123H1 7" 3,000 4.0 30,000 183*183*123 178 382*262*387 240,000 8.5 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) Document ID Issued Date Revised Date Revision Page. 1.Storage environment: Temperature=5 ~40 Humidity=55% 25% 2.Reflow soldering of surface-mount devices oo CC Suggested thermal profiles for soldering processes Profile Feature Soldering Condition Average ramp-up rate(T to T ) <3 /sec Preheat -Temperature Min(Tsmin) 150 -Temperature Max(Tsmax) 200 -Time(min to max)(t ) 60~120sec Tsmax to T -Ramp-upRate <3 /sec Time maintained above: -Temperature(T ) 217 -Time(t ) 60~260sec Peak Temperature(T ) 255 0/ 5 Time within 5 of actual Peak Temperature(t ) Ramp-down Rate <6 /sec Time 25 to Peak Temperature <6minutes LP s L L L P P o o o o o oo o o o C C C C C C- + C C C C 10~30sec 3.Reflow soldering Critical Zone TL to TP Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat t25 C to Peak o Time TL TP Ramp-down Temperature Chip RectifierLow VF Schottky Barrier DS-12165G 2014/03/21 - A 7 SL22-MH1 THRU SL24-MH1

http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. 1. Solder Resistance 2. Solderability 3. High Temperature Reverse Bias 4. Forward Operation Life 5. Intermittent Operation Life 6. Pressure Cooker 7. Temperature Cycling 8. Forward Surge 9. Humidity 10. High Temperature Storage Life at 260 5 for 10 2sec. immerse body into solder 1/16" 1/32" at 245 5 for 5 sec. V =80% rate at T =100 for 168 hrs. Rated average rectifier current at T =25 for 500hrs. T = 25 C, I = I On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. 15P at T =121 for 4 hrs. -55 to +125 dwelled for 30 min. and transferred for 5min. total 10 cycles. 8.3ms single half sine-wave , one surge. at T =85 , RH=85% for 1000hrs. at 175 for 1000 hrs. ±C ± C C C CC C C O O O O O OO O O RJ A AF O SIG A A O MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 MIL-STD-750D METHOD-1038 MIL-STD-750D METHOD-1027 MIL-STD-750D METHOD-1036 MIL-STD-750D METHOD-1051 MIL-STD-750D METHOD-4066-2 MIL-STD-750D METHOD-1021 MIL-STD-750D METHOD-1031 JESD22-A102 Item Test Conditions Reference High reliability test capabilities Chip RectifierLow VF Schottky Barrier DS-12165G 2014/03/21 - A 7 SL22-MH1 THRU SL24-MH1