SL20T80_V01 ZSELEC | Alldatasheet
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! T e rminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Mounting Position: Any ! Marking: Type Number Maximum R a tings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1 of 2 SL20T80 - SL20T200 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com TO-277B 0.45 0.20 1.20 1.00 6.60 6.40 1.00 0.80 1.20 1.00 3.20 2.90 0.65 0.45 5.50 5.30 1.90 1.70 4.20 3.80 1.95 1.65 3.85 3.25 Dimensions in millimeters Excellent High Temperature Stability High Thermal Reliability Ultra Low Power Loss, High Efficiency High Foward Surge Capability High Junction Temperture Bypass Diodes for Solar Panels! Patented Super Barrier Rectifier Technology! ! Schottky Barrier Chip mmended pad l ayout . 2. FR-4 PCB, 2oz. Copper, minimum reco Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 3. P oly 20 A UnitCharacteri stic Symbol 300 A V 110 °C/W -55 to +150 °C P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR( RMS) A v erage Rectified Output Current @T L = 100° C (Note 1) IO Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward Volt age Drop VFM P e ak R e v e r s e C u r r e n t @ TA = 25° C A t Rated DC Blocking Voltage @T A = 100° C IRM 0.3 15 mA Typic al Thermal Resistance (Note 1) R/G01JA Operat ing and Storage Temperature Range Tj, TSTG V V I t Rating for Fusing (t< 8.3ms)2 I t2 259.4 A s2 0.63 100 120 150 105 200 140 @IF = 1.0ATA = 25° C @IF = 5.0ATA = 25°C @IF = 20 ATA = 25°C 0.88 Typ. 0.37 0.45 Max. 0.66 0.80 Typ. 0.43 0.60 0.75 Max. 0.85 F = 10 ATA = 25°C 0.51 0. 63 0.67 - SL20T80 SL20T100 SL20T120 SL20T150 SL20T200
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SL20T80 - SL20T200 SL20T80 - SL20T200 VOLTAGE, VOLTS R RR FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.01 0.1 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 100 JUNCTION CAPACITANCE, pF 10000 1.0 4.0 10 100 1000 TJ=100 o C TJ=25 o C TJ = 25 o C f = 1.0 MHZ Vsig = 50mVp-p FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 25.0 20.0 10.0 5.0 15.0 0 50 100 150 LEAD TEMPERATURE, o C Hz Resistive or Inductive load FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 150 200 250 300 1 10 100 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) FIG.2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TJ=25 o C PULSE WIDTH=300uS 1% DUTY CYCLE