SL2009 ZARLINK | Alldatasheet

Document overview

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Technical content

Features

  • Single chip solution for tuner IF gain and AGC
  • Contains 34 dB of AGC shared between two AGC stages
  • Design optimised for high signal handling with low inter-modulation spurious generation
  • I/O ports optimised to interface with standard SAW filters
  • ESD protection (Normal ESD handling procedures should be observed)

Applications

  • Cable Network interface modules and tuners
  • Data communications systems

Description

The SL2009 is a dual IF amplifier intended for application in cable tuners, and integrates all of the IF gain and AGC required to deliver 1Vp-p in a standard tuner configuration. The devices includes two stages of IF gain which are both optimised to interface with inter-stage filters. Both stages contain independent AGC facility, and the first stage contains a level detect for control of the tuner AGC. Figure 1 - Pin allocation VCCIF SDRIVEOPB AGCOUTAGC2 IFOP VEE IFOPB VEE AGC1 SDRIVEIP SDRIVEIPB AGCBIAS IFIP VCCSAW SDRIVEOP IFIPB NP16 (15) SDRIVEOP AGC SENDER (14) SDRIVEOPB IFOPB (7) IFOP (5)(1) IFIP (2) IFIPB (4) AGC2 (11) SDRIVEIP (10) SDRIVEIPB (12) AGC1 AGCBIAS (9) AGCOUT (13) VccIF (3) VccSAW (16) Vee (6,8) SAW Driver AGC SENDER AGC SENDER

Input operating range 30 - 50 MHz Input NF , referred to 2k Ω 4d B OPIP3 4 dBV Gain 14 - 28 dB IF Amplifier stage Input operating range 30 - 50 MHz Input NF , referred to 2 k Ω 6d B OPIP3 8 dBV Gain 20 - 40 dB Table 1 - Quick reference data Functional Description The SL2009 is an IF amplifier intended primarily for application in cable tuners, and requiring a minimum external component count to integrate the IF gain, AGC facility and level detect. The pin allocation is contained in figure (1) and the block diagram in figure (2) SAWF driver stage In normal application the IF output of the tuner, which is typically in the region of 30-50 MHz, is interfaced to input preamplifier of the SAWF driver stage, which is optimised for both signal handling and NF referred to 2 k Ω The input preamplifier interfaces with the variable gain stage, which is under control of the first AGC sender and provides for 14 dB of gain control. The typical gain characteristic is contained in figure (3). The AGC stage then interfaces with the output buffer amplifier, which presents a balanced 50 Ω drive to the IF SAW filter and offers high signal handling to minimise intermodulation distortions. The SAWF amplifier also incorporates a level detect block whose output AGCOUT, can be used to control the gain of the SAWF amplifier or other gain stages in front of the SL2009. This AGC characteristic can be set up by a "current set" resistor connected between the AGCBIAS input and Vee. The typical characteristic curve for AGC set, output level under different AGCBIAS conditions is contained in figure (4). See figures (5) and (6) for SAW amplifier input and output impedances respectively. IF amplifier section In normal application the output of the SAW filter is coupled differentially to the input preamplifier of the IF amplifier, which presents a differential 2 k Ω 3 pF load to the SAW filter and is optimised for both signal handling and NF . See figure (8) for IF amplifier input impedance. The input preamplifier, then interfaces with the variable gain stage which is under control of the second AGC sender and this provides for 20 dB of gain control. The typical AGC characteristic is contained in figure (7) The AGC output is then connected to the output driver stage, which presents a low differential output impedance, see figure (9) and is optimised for output signal handling. The typical key performance data at 5V Vcc and 25 deg C ambient are shown in the table entitled 'QUICK REFERENCE DATA'.

Figure 5 - Typical SAWF driver input impedance, single-ended Figure 6 - Typical SAWF driver output impedance, single-ended CH1 S 11 1 U FS START 1.000 000 MHz STOP 100.000 000 MHz Cor Avg PRm

8 Feb 2001 16:27:29

Ω Ω 1: 2.3 K - 56 = 2.3 K 2.8 nF @ 1MHz 2: 1.2 K - 1.0 K = 1.2 K 4.4 pF @ 36 MHz 3: 932 - 1.1 K = 932 2.9 pF @ 50 MHz 4: 448 - 760 = 448 2.0 pF @100MHz CH1 S 11 1 U FS START 1.000 000 MHz STOP 100.000 000 MHz Cor Avg PRm Ω Ω Normalised to 2 K CH1 S 11 1 U FS START 1.000 000 MHz STOP 100.000 000 MHz Cor Avg PRm

9 Feb 2001 12:27:19

1_: 132.01 -1.5938 99.862 nF 1.000 000 MHz 234 Ω Ω 2_: 121.2 Ω -12.078 Ω 36MHZ 3_: 117.25 Ω 50MHz 4_: 110.06 Ω -7.5742W 100MHz Normalised to 50 Ω

Figure 7 - Typical IF amplifier stage AGC characteristic 0 1 2 3 4 5 AGC Voltage (V) Gain (dB) -20 -10 IFAmp AGC Slope ( Vcc = 5v, 25'C)

Figure 8 - Typical IF amplifier input impedance, single-ended Figure 9 - Typical IF amplifier output impedance, single-ended CH1 S 11 1 U FS START 1.000 000 MHz STOP 100.000 000 MH z Cor Avg PRm 4 3

8 Feb 2001 16:19:58

Ω Ω 1: 2.3 K - 60 = 2.38 K 2.6 nF @ 1MHz 2: 1.1 K - 1.2 K = 1.1 K 3.7 pF @ 36 MHz 3: 736 - 1.08 K = 733 2.9 pF @ 50 MHz 4: 340 - 728 = 344 2.2 pF Normalised to 2 K 114.26 17.66 nHCH1 S 11 1 U FS START 1.000 000 MHz STOP 100.000 000 MHz Cor PR m

9 Feb 2001 16:17:56

1_: 9.8564 m 1.029 700 MHz Ω Ω 2_: 7.8931 Ω 6.0146 Ω 36MHZ 3_: 11.521 Ω 9.3154 Ω 50MHz 4_: 26.014 Ω 2.7539 Ω 100MHz Normalised to 50 Ω

Electrical Characteristics

Test conditions (unless otherwise stated) Tamb = -40˚ to 85˚C, V ee = 0V, V cc IF = 5V+-5%, V cc SAW =5V+-5% These characteristics are guaranteed by either production test or design. They apply within the specified ambient temperature and supply voltage unless otherwise stated. Characteristics pin min typ max units Conditions Supply current 3,16 50 70 mA Pin (3) VccIF and pin (16) VccSAW are isolated on chip. Operating frequency 30 50 MHz Gain Flatness 1dB Over speci fied output range. Excluding SAW filter contributions. 8MHz B/W. See note (4) SAWF driver Input impedance 10,11 2 k Ω Differential, see figure (5) 3p F Noise Figure 4 6 dB Tamb=27 ˚C, referred to source impedance of 2 k Ω conversion gain set at 28 dB Variation in NF with gain adjust -1 dB/dB Output referred IP3 3 dBV Over speci fied gain range, see note (1) and (4) Gain Maximum Minimum 25.5 8.5 dB db Voltage conversion gain from 2 k Ω differential source to 1 k Ω //10 pF single-ended load, see note (4) Vagc1=1.5V Vagc1=3.5V AGC monotonic from V ee to V cc . See Figure (3) Output impedance 14,15 50 Ω Single-ended, see figure (6) Output return loss 14,15 9 dB Output limiting 14,15 1.8 Vp-p Single-ended into 1 k Ω // 10 pF load 3 rd Harmonic of wanted output signal better than 10dBC. AGC1 Leakage current 12 -110 110 µ A Vee<=Vagc1<=V cc -50 50 µ A 1.5V<=Vagc1<=3.5V AGCOUT charging current 13 150 200 350 µ A Source and sink AGCOUT voltage range 13 0.5 3.5 V See note (3), max load current 50 µ A AGC output level set See figure (4) Table 2 - Electrical Characteristics

Notes: (1) Two output tones at 104 dB µ V within operating range (2) Two output tones at 108 dB µ V within operating range (3) When controlling external AGC the current load on AGCOUT should be minimised (4) For maximum performance, capacitive load should be resonated with appropriate inductance at chosen IF frequency. Absolute Maximum Ratings All voltages are referred to Vee at 0V, and VccIF=VccSAW IF amplifier Input impedance 1,2 2 k Ω Differential, see figure (8) 3p F Noise Figure 4 6 dB Tamb=27 ˚C, referred to source impedance of 2 k Ω conversion gain set at 40 dB Variation in NF with gain adjust -1 dB/dB Output referred IP3 5,7 5 dBV With gains of 24dB and above, see note (2) 4 dBV With gains from 20dB to 24dB, see note (2) Gain Maximum Minimum dB dB Voltage conversion gain from 2 k Ω differential source to 1 k Ω // 15 pF single-ended load, see figure (7) Vagc2=1.0V Vagc2=4.25V AGC monotonic from V ee to V cc Output impedance 5,7 25 Ω Single-ended, see figure (9) Output limiting 5,7 1.8 Vp-p Single-ended into to 1 k Ω 15 pF load. 3 rd Harmonic of wanted output signal better than 10dBC. AGC2 leakage current 4 -110 110 µ A Characteristics pin min typ max units Conditions Table 2 - Electrical Characteristics (continued)

All voltages are referred to V ee at 0V, and V cc IF=VccSAW Characteristics min max units conditions Supply voltage -0.3 7 V All I/O port DC offsets -0.3 Vcc+0.3 V Storage temperature -55 150 ˚C Junction temperature 150 ˚C Package thermal resistance, chip to case 32.2 ˚C Package thermal resistance, chip to ambient 108.1 ˚C/W Power consumption at 5.25V 368 mW ESD protection 2 kV Mil-std 883B method 3015 cat1 Table 3 - Absolute Maximum Ratings

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