SL1ICS3001 PHILIPS | Alldatasheet
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I•CODE1 Label IC Chip Specification Product Specification Revision 2.1 Public 2000-05-02 Philips Semiconductors
I•CODE1 Chip Specification Rev. 2.1 May 2000 SL040521.doc/M Public Page 2 of 22
1 Contents
1 CONTENTS 2
2 DEFINITIONS 4
3 SCOPE 5
4 ORDERING INFORMATION 5
5 FUNCTIONAL DESCRIPTION 6
6 MECHANICAL DIE SPECIFICATIONS 9
7 MECHANICAL WAFER SPECIFICATIONS 10
8 DOCUMENTATION 11
9 QUALITY ASSURANCE 12
10 PACKING 13
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11 HANDLING RECOMMENDATIONS 14
12 COIL SPECIFICATION 14
13 ELECTRICAL SPECIFICATIONS 15
14 HINTS FOR LABEL IC ENCAPSULATION 16
15 INLET/LABEL CHARACTERISATION AND TEST 17
16 APPENDIX A: DIE PLAN 18
17 APPENDIX B: CLUSTER PLAN 19
18 APPENDIX C: CLUSTER MAP 20
19 APPENDIX D: WAFER MAP 21
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2 Definitions
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics section of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
2.1 Life Support Applications
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so on their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
2.2 Abbreviations
ASCII American Standard Code for Information Interchange CSC Cyclic Redundancy Check EAN European Article Number EAS Electronic Article Surveillance EEPROM Electrically Erasable and Programmable Read Only Memory EMI Electromagnetic Interference ETSI European Telecommunications Standards Institute FCC Federal Communications Commission FFC Film Frame Carrier Hex Value in hexadecimal notation IC Integrated Circuit ISM Industrial, Scientific, Medical LSB Least Significant Bit or Byte MSB Most Significant Bit or Byte MTBF Mean Time Between Failure PCB Printed Circuit Board PCM Process Control Module RF Radio Frequency rms Root Mean Square SNR Serial Number UV Ultraviolet
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3 Scope
This specification describes the electrical, physical and dimensional properties of unsawn and sawn wafers on FFC of I•CODE1 Label ICs on a Philips 6C15 IDFW process and is the base for delivery of tested I•CODE1 Label ICs. General recommendations are given for storage, handling and processing of wafers as well as assembly of labels. Reference documents: MIL-STD 883D Method 3023 MIL-STD 883D Method 3015 SNW-FQ-627 PICTOH-QS007 General Specification for 6” Wafer (Prod. Spec.) General Quality Specification I•CODE1 Label IC, Coil Design Guide This product specification is valid for VCOL1V0 from mask revision P/B upwards.
4 Ordering Information
Following ordering options are available: Type Name Description Ordering Code SL1 ICS30 01W/N5D Sawn wafer on foil (FFC), 150 µm, inked and mapped 9352 644 66005 SL1 ICS30 01U/N5D Unsawn wafer, 150 µm, inked and mapped 9352 644 65025 SL1 ICS30 01U/L6D Unsawn wafer, 525 µm, mapped (not inked) 9352 644 64025
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5 Functional Description
5.1 Basic Features
The I•CODE1 Label IC is a dedicated chip for intelligent label applications like logistics and retail (including EAS) as well as baggage and parcel identification in airline business and mail services. The I•CODE system offers the possibility of operating labels simultaneously in the field of the reader antenna (Anticollision). It is designed for long range applications. Whenever connected to a very simple and cheap type of antenna (as a result of the 13.56 MHz carrier frequency) made out of a few windings printed, winded, etched or punched coil the I•CODE1 Label IC can be operated without line of sight up to a distance of 1.5 m (gate width).
5.2 Block Diagram of the IC
The label requires no internal power supply. Its contactless interface generates the power supply and the system clock via the resonant circuitry by inductive coupling to the reader. The interface also demodulates data that are transmitted from the reader to the I•CODE Label, and modulates the electromagnetic field for data transmission from the I•CODE Label to the reader. Data are stored in a non-volatile memory (EEPROM). The EEPROM has a memory capacity of 512 bit and is organised in 16 blocks consisting of 4 bytes each (1 block = 32 bits). The higher 12 blocks contain user data and the lowest 4 blocks contain the serial number, the write access conditions and some configuration bits.
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5.3 Memory Organisation
The 512 bit EEPROM memory is divided into 16 blocks. A block is the smallest access unit. Each block consists of 4 bytes (1 block = 32 bits). Bit 0 in each byte represents the least significant bit (LSB) and bit 7 the most significant bit (MSB), respectively. Byte 0 Byte 1 Byte 2 Byte 3 Block 0 SNR0 SNR1 SNR2 SNR3 Serial Number (lower bytes) Block 1 SNR4 SNR5 SNR6 SNR7 Serial Number (higher bytes) Block 2 F0 FF FF FF Write Access Conditions Block 3 x x x x Special Functions (EAS/QUIET) Block 4 x x x x Family Code/Application Identifier/User Data Block 5 x x x x User Data Block 6 x x x x : Block 7 x x x x : Block 8 x x x x : Block 9 x x x x : Block 10 x x x x : Block 11 x x x x : Block 12 x x x x : Block 13 x x x x : Block 14 x x x x : Block 15 x x x x User Data The values (in hexadecimal notation) shown in the table above are stored in the EEPROM after the wafer production process. The contents of blocks marked with ‘x’ in the table are not defined at delivery.
5.3.1 Serial Number
The unique 64 bit serial number is stored in blocks 0 and 1 and is programmed during the production process. SNR0 in the table represents the least significant byte and SNR7 the most significant byte, respectively.
5.3.2 Write Access Conditions
The Write Access Condition bits in block 2 determine the write access conditions for each of the 16 blocks. These bits can be set only to 0 (and never be changed to 1), i.e. already write protected blocks can never be written to from this moment on. This is also true for block 2. If this block is set into write protected state by clearing of bits 4 and 5 at byte 0, no further changes in write access conditions are possible. Byte 0 Byte 1 Byte 2 Byte 3 âMSB LSBâ âMSB LSBâ âMSB LSBâ âMSB LSBâ Block 2: Write Access Conditions |1|1 |1|1 |0|0 |0|0 |1|1 |1|1 |1|1 |1|1 |1|1 |1|1 |1|1 |1|1 |1|1 |1|1 |1|1 |1|1 for Block à 3 2 1 0 7 6 5 4 11 10 9 8 15 14 13 12 Special Funct. Write Access Serial Number User Data The ones in the 16 pairs of bits have to be cleared together if the corresponding block is wanted to be write protected forever (1|1 à write access enabled, 0|0 à write access disabled). Writing of bit pairs 1|0 or 0|1 to block 2 is not allowed! It is extremely important to be particularly careful when clearing the Write Access bits in block 2, as you can lose write access to all of the blocks on the label in case of a mistake. Of course you can use this feature to put the label into a hardware write protected state!
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5.3.3 Special Functions (EAS/QUIET)
The Special Functions block holds the two EAS bits (Electronic Article Surveillance mode active à the label answers at an EAS command) as well as the two QUIET bits (QUIET mode enabled à the label is permanently disabled but can be activated again with the ‘Reset QUIET bit’ command). The state of QUIET mode does not influence the functionality of the EAS command. The remaining 28 bits (greyed ‘x’ in the following figure) are reserved for future use. Byte 0 Byte 1 Byte 2 Byte 3 âMSB LSBâ Block 3: Special Functions x|x x|x q|q e|e x|x x|x x|x x|x x|x x|x x|x x|x x|x x|x x|x x|x Quiet EAS Quiet: q|q = 1|1 à QUIET mode enabled q|q = 0|0 à QUIET mode disabled EAS: e|e = 1|1 à EAS mode enabled e|e = 0|0 à EAS mode disabled Writing of bit pairs 1|0 or 0|1 to block 3 is not allowed! Changing of the Write Access Control or Configuration must be done in secure environment (by reading the current value of the block and masking in the new values for bit positions that may be changed). The label must not be moved out of the communication field of the antenna during writing! We recommend to put the label close to the antenna and not to remove it during operation.
5.3.4 Family Code and Application Identifier
The I•CODE system offers the feature to use (independently) Family Codes and/or Application Identifiers with some reader commands (this allows for example the creation of ‘label families’). These two 8-bit values are located at the beginning of User Data (block 4) as shown in the following figure and are only evaluated if the corresponding bytes at the reader commands are unequal to zero. Only if both corresponding parameter bytes at the reader commands Anticollision/Select, EAS and Unselected Read, respectively, are set to zero, block 4 can be used for user data without restriction. Byte 0 Byte 1 Byte 2 Byte 3 âMSB LSBâ âMSB LSBâ Block 4: Family Code, Application ID x | x x | x x | x x | x x | x x | x x | x x | x x | x x | x x | x x | x x | x x | x x | x x | x Family Code Application ID The greyed bytes are for customer usage as well as the remaining blocks (5 to 15) are.
5.3.5 Configuration of delivered ICs
I•CODE1 Label ICs are delivered with the following configuration by Philips:
- Serial number is unique and read only
- Write Access Conditions allow to change all blocks (with the exception of both serial number blocks)
- Status of EAS mode is not defined
- Status of QUIET mode is not defined
- Family Code and Application Identifier are not defined
- User Data memory is not defined As the status of QUIET mode is not defined at delivery, the first command to be executed on the I•CODE1 Label IC should be the Reset QUIET Bit command!
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6 Mechanical Die Specifications
Designation: VCOL1V0 visible on each die location see attached die plan Bond pad location: see attached die plan Bond pad size: LA, LB 130 µm x 150 µm Test pad size: TEST, VSS 90 µm x 90 µm (the test pads are electrically neutral at sawn wafers) Bond pad metallisation material: AlSiCu Metallisation thickness: 1.4 µm Die dimensions (incl. 80 µm scribe line): 1460 µm x 1490 µm Die dimensions (excl. scribe line): 1380 µm x 1410 µm Tolerances for sawn dies: ± 25 µm Pin identification: see attached die plan Passivation attributes: The passivation is a protection of active areas against dust (particles) and humidity and general contamination (whole surface of the chip except for the bond pads). Top side passivation material: Oxynitride Passivation thickness: 1.6 µm Due to the glass-like physical properties careful handling and processing is required. Available die backside treatment: etched
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7 Mechanical Wafer Specifications
For further information as described in the following chapters please refer to the following Philips documents:
- Dicing Guidelines for Thin Wafers (< 200 µm)
- General Specification for 6” Wafer (Prod. Spec.) In case of doubt or inconsistency with the following chapters the above mentioned specifications are applicable. Designation: each wafer is laser scribed with batch and wafer number Wafer diameter: 150 mm (6") ± 0.3 mm Die separation lane width: 80 µm (Scribe line) Electrical connection of substrate: VSS Geometrically complete dies per wafer: approx. 7400 Orientation of dies relat. to wafer flat: see attached cluster map Position of test structures: see attached cluster map Wafer layout: see attached cluster map Batch size: 24 wafers Process: 6C15 IDFW
7.1 Wafer Status
- Tested, unsawn
- Tested, sawn on FFC Minimum yield per lot: 30 %
7.2 Backside Treatment
Wafers can be delivered with a thickness of 525 µm (untreated) or with 150 µm ± 15 µm (approx. 6 mil) grinded and etched backside.
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8 Documentation
8.1 Delivery Documentation
Each wafer container and each larger shipment container is individually marked with the identification information as follows:
- Diffusion Batch number (wafer lot number)
- Part designation (type) with revision number
- Ordering code (see chapter 4)
- Date code of lot acceptation
- Good die quantity The print out of the final test results is attached to the packing and contains the good die quantity related to every wafer number.
8.2 Fail-Die Identification
Every die is electrically tested according to data sheet. Identification of chips, which do not confirm with the electrical parameters of the data sheet is done by inking and/or wafer mapping (all dies at wafer periphery are identified by ‘FAIL’).
8.2.1 Ink Dot Specification
Diameter: min. 0.4 mm Height: max. 20 µm Colour: black Position: central third of die (x, y direction) Attributes: opaque, water resistant NOTE: Uncompleted dies with an area < 95 % (wafer periphery) are not inked!
8.2.2 Wafer Mapping
Wafer mapping for failed die identification is available on Floppy-Disk. Format: Electroglas ESC–ASCEND on 3.5″ Floppy-Disk NOTE: The wafer map refers to unsawn wafers. At sawn wafers (on FFC) additional ICs might be inked (marked as fail) if damaged during the sawing process (compared to wafer map)! See Appendix D for an example of the wafer map.
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9 Quality Assurance
9.1 Electrical Acceptance Test
The electrical acceptance test is performed in line (‘sampling on the fly’) according to the test specifications. Sampling plan: according General Quality Specification
9.2 Visual Inspection
9.2.1 After Wafer Final Test
Performed according document SNW-FQ-627. Sampling plan: according General Quality Specification
9.2.2 After Sawing (Film Frame Carrier)
Performed according document PICTOH-QS007. Sampling plan (3 wafers per lot): accept 0/3
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10 Packing
The packing for shipment of wafers has to protect the wafers against shock, severe impact, dust and electrostatic discharge. The packing of unsawn wafers or sawn wafers is done according to Philips ‘General Specification for 6” Wafer (Prod. Spec.)’.
10.1 Storage Recommendations
Unsawn/sawn wafers should be kept in their original packing whilst in storage. Recommended storage conditions: Temperature: 15 ... 25 °C Duration of storage: max. 6 months Deviating requirements have to be arranged between customer and Philips Semiconductors.
10.2 Possible Forms of Delivery
10.2.1 Packing of Unsawn Wafers
Delivery form: wafer box
10.2.2 Packing of Sawn Wafers
Delivery form: Film Frame Carrier (standard Philips carrier type P7) Foil material: sticky foil
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11 Handling Recommendations
Please refer to Philips ‘General Specification for 6” Wafer (Prod. Spec.)’ for the following items:
11.1 Sawing
11.2 Die Attach
11.3 Wire Bonding
12 Coil Specification
The I•CODE1 Label IC has to be connected at pads LA, LB to a coil characterised by its electrical parameters according to Philips application note ‘SL1 ICS30 01 I•CODE1 Label IC, Coil Design Guide’.
I•CODE1 Chip Specification Rev. 2.1 May 2000 SL040521.doc/M Public Page 15 of 22 ABSOLUTE MAXIMUM RATINGS1, 2 SYMBOL PARAMETER TEST CONDITIONS RATING UNIT Tstg Storage Temperature Range - 55 to +140 °C Tj Junction Temperature - 55 to +140 °C VESD ESD Voltage Immunity MIL-STD-883D, Method 3015.7, Human Body Model ± 2 kVpeak Imax LA-LB Maximum Input Peak Current ± 60 mApeak NOTES: 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical Characteristics section of this specification is not implied. 2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima. OPERATING CONDITIONS SYMBOL PARAMETER TEST CONDITIONS MIN TYP1 MAX UNIT Tamb Operating Ambient Temperature - 25 + 70 °C Tj op Operating Junction Temperature - 25 + 85 °C ILA-LB Input Current 30 mArms VLA-LB rd Minimum Supply Voltage 2 for READ/EAS Standard Mode ± 3.1 ± 3.7 Vpeak VLA-LB wr Minimum Supply Voltage 2 for WRITE Standard Mode ± 3.6 ± 4.1 Vpeak VLA-LB fm Minimum Supply Voltage 2 for READ/EAS/WRITE Fast Mode ± 5.2 ± 6.5 Vpeak fop Operating Frequency 3 13.553 13.560 13.567 MHz NOTES: 1. Typical ratings are not guaranteed. These values listed are at room temperature. 2. The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to parameter ILA-LB). 3. Bandwidth limitation (±7 kHz) according to ISM band regulations.
ELECTRICAL CHARACTERISTICS
Tamb = - 25 to +70 °C SYMBOL PARAMETER TEST CONDITIONS MIN TYP1 MAX UNIT Cres Input Capacitance between LA - LB 2 VLA-LB = 2 Vrms 22.3 23.5 24.7 pF Pmin Minimum Operating Supply Power 3 VLA-LB = 2 Vrms 200 µW mmin Minimum Modulation of RF Voltage for Demodulator Response m V - V V + V max min max min= 10 14 % mmax Maximum Modulation of RF Voltage for Demodulator Response m V - V V + V max min max min= 30 % tP sm Modulation Pulse Length of RF Voltage4 Standard Mode, m ≥ 10 % 3.54 5.315 9.44 µs tP fm Modulation Start-Pulse Length of RF Voltage4 Fast Mode, m ≥ 10 % 15.34 17.115 21.24 µs tD Demodulator Response Time m ≥ 10 % 0.1 0.8 2.4 µs Rmod Modulator ON Resistance ILA-LB = 30 mA 50 115 250 Ω tret EEPROM Data Retention Tamb ≤ 55 °C 10 Years nwrite EEPROM Write Endurance 100 000 Cycles NOTES: 1. Typical ratings are not guaranteed. These values listed are at room temperature. 2. Measured with an HP4285A LCR meter at 13.56 MHz. 3. Including losses in resonant capacitor and rectifier. 4. The given values are derived from the 13.56 MHz system frequency. 5. Recommended values for pulse duration generated at the read/write device.
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14 Hints for Label IC Encapsulation
14.1 Protection against Visible Light
As a result of the ultra low power design of the I•CODE1 Label IC some analogue circuits on the chip are light sensitive. This means that common sun light can impact the operation of the label if the chip is not protected against visible light radiation. Measurements have shown that a radiation of Emax = 60 W/m2 (spectrum: 400 to 1000 nm) causes a reduced operating range of the plain chip. Measurements of direct sunlight in summer deliver values up to 260 W/m2. To ensure proper operation an expected minimum radiation reduction factor of approx. 9 (2 x 260/60 = 8.7) must be provided by the encapsulation. That means special care has to be taken to ensure a sufficient light protection of the I•CODE1 Label IC (e.g. non translucent encapsulation or underfiller, ...) according to application requirements.
14.2 Protection against UV Light
An EEPROM memory, as it is also used in the I•CODE1 Label IC, has some principle sensitivity to UV light (applies to EEPROM-technology in general). Thus strong UV exposure in the production of inlets/labels has to be avoided. UV protection has to be ensured using appropriate assembly methods.
14.3 Resistance to X-Rays
X-ray exposure on comparable Philips ICs (with even smaller feature size) caused neither a long term influence on the behaviour of the ICs nor on the data retention of the EEPROMs.
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15 Inlet/Label Characterisation and Test
15.1 Characterisation of the Inlet/Label
The parameters recommended to be characterised for the inlet/label are: Parameter Symbol Conditions Resonant frequency fres Resonant frequency @ Tamb = 22 °C @ BTH No command transmitted to the inlet/label à Label generates no response à No modulation Threshold value for UNSELECTED READ command (standard mode) BTH UNSELECTED READ command OK Threshold value for WRITE command (standard mode) BWR WRITE (and Verifying READ) command OK
15.2 Final Test of the Inlet/Label
Basic flow for production and test: 1. Production of wafer 2. Testing of dies on wafer 3. Writing of serial numbers and pre-configuration 4. Sawing of wafer 5. Assembly of inlets/labels 6. Final test of inlets/labels 7. Writing of customer data To detect damage of EEPROM cells during production of inlets/labels a final test of the EEPROM after assembly of the inlet/label is recommended. This is necessary to achieve lowest failure rates.
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16 Appendix A: Die Plan
Measuring unit: µm The two test pads (TEST and VSS) are electrically neutral at sawn wafers!
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17 Appendix B: Cluster Plan
Measuring unit: mm
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18 Appendix C: Cluster Map
The three black lines show the position of the PCM structures on the 6 inch wafer!
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19 Appendix D: Wafer Map
The following screenshot shows an example of a wafer map: Map file of this example: ELECTROGLAS APPLICATIONS - WAFER TEST DATA FILE COPYRIGHT ASCEND LOT 09397 DEVICE VCOL1HE2 PRODUCTVCOL\\4020 WAFER 05 READER 09397-05-B6 XSTEP 575 UNITS (0.1)MIL YSTEP 587 UNITS (0.1)MIL XREF 16891 UNITS (0.1)MIL YREF -261 UNITS (0.1)MIL XDELTA 0 YDELTA 0 FLAT 0 XFRST 21 YFRST 50 PRQUAD 1 COQUAD 1 DIAM 6000 UNITS MIL DATE 2000-01-23 TIME 15:30:00 OPERATOR 4020 SETUP FILE M:\\SET\\VCOL1HE2.SET TEST SYSTEM SYS VCOL\\4020 TEST DATA PROBE CARD PC PROBER PIWP105 ### shortening of the file ### X40Y3 3 0 X41Y3 5 1 X42Y3 5 1 X43Y3 5 1 X44Y3 5 1 X45Y3 5 1 X46Y3 5 1 X47Y3 2 0 X48Y3 2 0 X49Y3 2 0 X50Y3 5 1 X51Y3 5 1 X52Y3 5 1 X53Y3 5 1 X54Y3 5 1 ### shortening of the file ### EDATE ETIME
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