SL15T80_V01 ZSELEC | Alldatasheet

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Case:TO-277B Molded Plastic "Green" Molding Compound mmended pad layout . 2. FR-4 PCB, 2oz. Copper, minimum reco We ight: 0.093 grams (approx.) Lead Free: For RoHS/Lead Free Version 15.0 A SUPER BA RRIER RECTIFIER SL15T80 - SL15T200 Feat ures M echanical Data Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Mounting Position: Any ! Marking: Type Number M aximum Ratings and Electrical Characteristics @T A=2 5°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 1 of 2 SL15T80 - SL15T200 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com TO-277B 0.45 0.20 1.20 1.00 6.60 6.40 1.00 0.80 1.20 1.00 3.20 2.90 0.65 0.45 5.50 5.30 1.90 1.70 4.20 3.80 1.95 1.65 3.85 3.25 Dimensions in millimeters Excellent High Temperature Stability High Thermal Reliability Ultra Lo w Power Loss, High Efficiency High Foward Surge Capability High Junction Temperture Bypass Diodes for Solar Panels! Patented Super Barrier Rectifier Technology! ! Schottky Barrier Chip 15 A UnitCharacteristi c Symbol 250 A V 110 °C/W -55 to +150 °C Peak Repeti tive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RMS Revers e Voltage VR(RM A verage Rec tified Output Current @T L = 100°C (Not e 1) IO Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FS M Forward Voltage Drop VFM P e a k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0. 15 mA Ty pical Thermal Resistance (Note 1) R/G01JA Operating and St orage Temperature Range Tj, TST G V Typ. V I t Rating for Fusing (t< 8.3ms)2 I t2 259.4 A s2 0.47 0.63 100 120 150 105 200 140 @IF = 1.0ATA = 25°C @IF = 5.0ATA = 25°C @IF = 15ATA = 25°C Max. 0.66 0.92 Typ. 0.47 0.63 Max. 0.66 0.70 Typ. 0.48 0.68 0.80 Max. 0.85 0.55@I F = 10ATA = 25°C 0.63 0.55 0.63 0.74 - SL15T80 SL15T100 SL15T120 SL15T150 SL15T200

Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SL15T80 - SL15T200 SL15T80 - SL15T200 R RR FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.01 0.1 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 100 JUNCTION CAPACITANCE, pF 10000 1.0 4.0 10 100 1000 TJ=100 o C TJ=25 o C TJ = 25 o C f =

1.0 MHZ

Vsig = 50mVp-p FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 25.0 20.0 10.0 5.0 15.0 0 50 100 150 LEAD TEMPERATURE, o C

60 Hz Resistive

FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 150 200 250 300 1 10 100 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) FIG.2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TJ=25 o C PULSE WIDTH=300uS 1% DUTY CYCLE