SKW15N120

SKW15N120 INFINEON | Alldatasheet

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Technical content

Power Semiconductors 1J u l - 0 2 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for: - Motor controls - Inverter - SMPS
• NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Package Ordering Code SKW15N120 1200V 15A 1.5mJ 150°C TO-247AC Q67040-S4281 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 52 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 52 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 50 A Gate-emitter voltage VGE ±20 V Short circuit withstand time1) VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 198 W Operating junction and storage temperature Tj , Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E P-TO-247-3-1 (TO-247AC)

Power Semiconductors 2J u l - 0 2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.63 Diode thermal resistance, junction – case RthJCD 1.5 Thermal resistance, junction – ambient RthJA TO-247AC 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =1000 µ A 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =15A Tj =25 °C Tj =150 °C 2.5 3.1 3.7 3.6 4.3 Diode forward voltage VF VGE =0V, IF =15A Tj =25 °C Tj =150 °C - 2.0 1.75 2.5 Gate-emitter threshold voltage VGE(th) IC =600 µ A, VCE =VGE 345 V Zero gate voltage collector current ICES VCE =1200V,V GE =0V Tj =25 °C Tj =150 °C 200 800 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =15A 11 - S Dynamic Characteristic Input capacitance Ciss - 1250 1500 Output capacitance Coss - 155 185 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz -6 5 8 0 pF Gate charge QGate VCC =960V, IC =15A VGE =15V - 130 175 nC Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-247AC - 13 - nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 10 µ s 100V ≤ VCC ≤ 1200V, Tj ≤ 150 °C - 145 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 3J u l - 0 2 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -1 8 2 4 Rise time tr -2 3 3 0 Turn-off delay time td(off) - 580 750 Fall time tf -2 2 2 9 ns Turn-on energy Eon -1 . 1 1 . 5 Turn-off energy Eoff -0 . 8 1 . 1 Total switching energy Ets Tj =25 °C, VCC =800V, IC =15A, VGE =15V/0V, RG =33 Ω , Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. -1 . 9 2 . 6 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF ns Diode reverse recovery charge Qrr -0 . 5 µC Diode peak reverse recovery current Irrm -1 5 A Diode peak rate of fall of reverse recovery current during tF di rr /dt Tj =25 °C, VR =800V, I F =15A, di F /dt =650A/ µ s - 500 A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -3 8 4 6 Rise time tr -3 0 3 6 Turn-off delay time td(off) - 652 780 Fall time tf -3 1 3 7 ns Turn-on energy Eon -1 . 9 2 . 3 Turn-off energy Eoff -1 . 5 2 . 0 Total switching energy Ets Tj =150 °C VCC =800V, IC =15A, VGE =15V/0V, RG =33 Ω , Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. -3 . 4 4 . 3 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 200 ns Diode reverse recovery charge Qrr -2 . 0 µC Diode peak reverse recovery current Irrm -2 3 A Diode peak rate of fall of reverse recovery current during tF di rr /dt Tj =150 °C VR =800V, I F =15A, di F /dt =650A/ µ s - 140 A/µs 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Power Semiconductors 11 Jul-02 dimensions symbol [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 ∅ P 3.61 0.1421 Q 6.12 6.22 0.2409 0.2449 TO-247AC

Power Semiconductors 12 Jul-02 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF.

Power Semiconductors 13 Jul-02 Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.