SKT8_2 SEMIKRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- high current density due to double mesa technology
- high surge current
- compatible to thick wire bonding
- compatible to all standard solder processes Typical Applications*
- conrolled rect ifier circuits
- solid state relays Absolute Maximum Ratings Symbol Conditions Values Unit VRRM Tj =2 5° C , IR =0 . 2m A 1600 V VDRM Tj =2 5° C , ID =0 . 2m A 1600 V IT(AV) Tc =8 0° C , Tj = 130 °C 80 A ITSM Tj = 130 °C, 10 ms, sin 180° 1000 A i2t Tj = 130 °C, 10 ms, sin 180° 5000 A 2s Tjmax 130 °C
Electrical Characteristics
Symbol Conditions min. typ. max. Unit VT Tj = 130 °C, IT =7 5A 1.2 V VT(TO) Tj = 130 °C 0.85 V rT Tj = 130 °C 4.8 m Ω IGT Tj =2 5° C 100 mA VGT Tj =2 5° C 1.98 V IGD Tj = 115 °C 6m A VGD Tj = 130 °C 0.25 V IH Tj =2 5° C 220 mA IL Tj =2 5° C 440 mA Dynamic Characteristics Symbol Conditions min. typ. max. Unit tq Tj = 130 °C 150 µs (di/dt)cr Tj = 130 °C 50 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs Thermal Characteristics Symbol Conditions min. typ. max. Unit Tj -40 130 °C Tstg -40 130 °C Tsolder 255 °C Rth(j-c) Semipack 1 assembly 0.36 K/W Mechanical Characteristics Symbol Conditions Values Unit Raster size 8.9 x 8.9 mm 2 Area total 79.2 mm 2 Anode solderable (Ag/Ni) Gate and Cathode bondable (Al) Wire bond Al,diameter ≤ 500µm Package tray Chips / Package 64 pcs
SKT 8,9 Qu ZG bond. 2 Rev. 0 – 19.02.2010 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and syste ms is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.