SKR7_09 SEMIKRON | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
- high current density due to mesa technology
- high surge current
- compatible to thick wire bonding
- compatible to all standard solder processes Typical Applications
- uncontrolled rectifier bridges Absolute Maximum Ratings Symbol Conditions Values Unit VRRM Tj =2 5° C , IR =0 . 0 5m A 1600 V IF(AV) Ts =8 0° C , Tj = 150 °C 60 A I2t Tj = 150 °C, 10 ms, sin 180° 3961 A 2s IFSM 10 ms sin 180° Tj =2 5° C 1000 A Tj = 150 °C 890 A Tjmax 150 °C
Electrical Characteristics
Symbol Conditions min. typ. max. Unit IR Tj =2 5° C , VRRM 0.05 mA Tj = 145 °C, VRRM 1.1 mA VF Tj =2 5° C , IF =4 5A 11 . 2 1 V Tj = 125 °C, IF =4 5A 0.9 1.1 V V(TO) Tj = 125 °C 0.83 V rT Tj = 125 °C 3.7 m Ω trr Tj =2 5° C , ± 1A 23 µs Thermal Characteristics Symbol Conditions min. typ. max. Unit Tj -40 150 °C Tstg -40 150 °C Tsolder 10 min. 250 °C Tsolder 5 min. 320 °C Rth(j-s) soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip
0.8 K/W
Mechanical Characteristics Symbol Conditions Values Unit Raster size 7,0 x 7,0 mm Area total 49 mm 2 Anode bondable (Al) Cathode solderable (Ag/Ni) Wire bond Al, diameter ≤ 500 µm Package wafer frame Chips / Package 294 pcs
SKR 7,0 Qu bond 2 Rev. 0 – 22.09.2009 © by SEMIKRON This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding del ivery, performance or suitability.