SKB06N60 INFINEON | Alldatasheet

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Technical content

1 Mar-00

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode G C E

  • 75% lower Eoff compared to previous generation combined with low conduction losses
  • Short circuit withstand time – 10 µs
  • Designed for: - Motor controls - Inverter
  • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
  • Very soft, fast recovery anti-parallel EmCon diode Type VCE IC VCE(sat) Tj Package Ordering Code SKP06N60 600V 6A 2.3V 150°C TO-220AB Q67040-S4230 SKB06N60 TO-263AB Q67040-S4231 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC 6.9 Pulsed collector current, tp limited by Tjmax ICpuls 24 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 24 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 24 A Gate-emitter voltage VGE ±20 V Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 68 W Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

2 Mar-00

Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 1.85 Diode thermal resistance, junction – case RthJCD 3.5 Thermal resistance, junction – ambient RthJA TO-220AB 62 SMD version, device on PCB1) RthJA TO-263AB 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =6A Tj =25 °C Tj =150 °C 1.7 2.0 2.3 2.4 2.8 Diode forward voltage VF VGE =0V, IF =6A Tj =25 °C Tj =150 °C 1.2 1.4 1.25 1.8 1.65 Gate-emitter threshold voltage VGE(th) IC =250 µ A, VCE =VGE 345 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 700 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =6A -4 . 2- S Dynamic Characteristic Input capacitance Ciss - 350 420 Output capacitance Coss -3 8 4 6 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz -2 3 2 8 pF Gate charge QGate VCC =480V, IC =6A VGE =15V -3 2 4 2 n C Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-220AB - 7 - nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC ≤ 600V, Tj ≤ 150 °C -6 0- A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

3 Mar-00

Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 5 3 0 Rise time tr -1 8 2 2 Turn-off delay time td(off) - 220 264 Fall time tf -5 4 6 5 ns Turn-on energy Eon - 0.110 0.127 Turn-off energy Eoff - 0.105 0.137 Total switching energy Ets Tj =25 °C, VCC =400V, IC =6A, VGE =0/15V, RG =50Ω , Energy losses include “tail” and diode reverse recovery. - 0.215 0.263 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 200 183 ns Diode reverse recovery charge Qrr - 200 - nC Diode peak reverse recovery current Irrm -2 . 8- A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =25 °C, VR =200V, I F =6A, di F /dt =200A/ µ s - 180 - A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 4 2 9 Rise time tr -1 7 2 0 Turn-off delay time td(off) - 248 298 Fall time tf -7 0 8 4 ns Turn-on energy Eon - 0.167 0.192 Turn-off energy Eoff - 0.153 0.199 Total switching energy Ets Tj =150 °C VCC =400V, IC =6A, VGE =0/15V, RG =50 Ω Energy losses include “tail” and diode reverse recovery. - 0.320 0.391 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 290 263 ns Diode reverse recovery charge Qrr - 500 - nC Diode peak reverse recovery current Irrm -5 . 0- A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =150 °C VR =200V, I F =6A, di F /dt =200A/ µ s - 200 - A/µs

4 Mar-00

Figure 1. Collector current as a function of Figure 2. Safe operating area Figure 3. Power dissipation as a function Figure 4. Collector current as a function of

5 Mar-00

Figure 5. Typical output characteristics Figure 6. Typical output characteristics Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter

6 Mar-00

Figure 9. Typical switching times as a Figure 10. Typical switching times as a Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage

7 Mar-00

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses Figure 15. Typical switching energy losses Figure 16. IGBT transient thermal

8 Mar-00

Figure 17. Typical gate charge Figure 18. Typical capacitance as a Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector

9 Mar-00

Figure 21. Typical reverse recovery time as Figure 22. Typical reverse recovery charge Figure 23. Typical reverse recovery current Figure 24. Typical diode peak rate of fall of

10 Mar-00

Figure 25. Typical diode forward current as Figure 26. Typical diode forward voltage as Figure 27. Diode transient thermal

11 Mar-00

symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB dimensions symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.1 typ. F 0.65 0.85 0.0256 0.0335 G 5.08 typ. 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 TO-263AB (D2Pak) Z 16.15 0.6358

12 Mar-00

Figure A. Definition of switching times I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure B. Definition of switching losses

13 Mar-00

Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.