SKP02N60 INFINEON | Alldatasheet

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Technical content

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

  • 75% lower Eoff compared to previous generation combined with low conduction losses
  • Short circuit withstand time – 10 µs
  • Designed for: - Motor controls - Inverter
  • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
  • Very soft, fast recovery anti-parallel EmCon diode
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Package Ordering Code SKP02N60 600V 2A 2.2V 150°C TO-220AB Q67040-S4214 SKB02N60 TO-263AB Q67040-S4215 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC 6.0 2.9 Pulsed collector current, tp limited by Tjmax ICpuls 12 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 12 Diode forward current TC = 25°C TC = 100°C IF 6.0 2.9 Diode pulsed current, tp limited by Tjmax IFpuls 12 A Gate-emitter voltage VGE ±20 V Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 30 W Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) G C E

Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 4.2 Diode thermal resistance, junction – case RthJCD 7 Thermal resistance, junction – ambient RthJA TO-220AB 62 SMD version, device on PCB1) RthJA TO-263AB 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =2A Tj =25 °C Tj =150 °C 1.7 1.9 2.2 2.4 2.7 Diode forward voltage VF VGE =0V, IF =2.9A Tj =25 °C Tj =150 °C 1.2 1.4 1.25 1.8 1.65 Gate-emitter threshold voltage VGE(th) IC =150 µ A, VCE =VGE 345 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 250 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =2A -1 . 6- S Dynamic Characteristic Input capacitance Ciss - 142 170 Output capacitance Coss -1 8 2 2 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz -1 0 1 2 pF Gate charge QGate VCC =480V, IC =2A VGE =15V -1 4 1 8 n C Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-220AB - 7 - nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC ≤ 600V, Tj ≤ 150 °C -2 0- A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 0 2 4 Rise time tr -1 3 1 6 Turn-off delay time td(off) - 259 311 Fall time tf -5 2 6 2 ns Turn-on energy Eon - 0.036 0.041 Turn-off energy Eoff - 0.028 0.036 Total switching energy Ets Tj =25 °C, VCC =400V, IC =2A, VGE =0/15V, RG =118 Ω , Lσ 1) =180nH, Cσ 1) =180pF Energy losses include “tail” and diode reverse recovery. - 0.064 0.078 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 130 118 ns Diode reverse recovery charge Qrr -6 5- n C Diode peak reverse recovery current Irrm -1 . 9- A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =25 °C, VR =200V, I F =2.9A, di F /dt =200A/ µ s - 180 - A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 0 2 4 Rise time tr -1 4 1 7 Turn-off delay time td(off) - 287 344 Fall time tf -6 7 8 0 ns Turn-on energy Eon - 0.054 0.062 Turn-off energy Eoff - 0.043 0.056 Total switching energy Ets Tj =150 °C VCC =400V, IC =2A, VGE =0/15V, RG =118 Ω , Lσ 1) =180nH, Cσ 1) =180pF Energy losses include “tail” and diode reverse recovery. - 0.097 0.118 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 150 131 ns Diode reverse recovery charge Qrr - 150 - nC Diode peak reverse recovery current Irrm -3 . 8- A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =150 °C VR =200V, I F =2.9A, di F /dt =200A/ µ s - 200 - A/µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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Figure 25. Typical diode forward current as Figure 26. Typical diode forward voltage as Figure 27. Diode transient thermal

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symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB dimensions symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.1 typ. F 0.65 0.85 0.0256 0.0335 G 5.08 typ. 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 TO-263AB (D2Pak) Z 16.15 0.6358

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Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =180pF.

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