SKML2502 SKTECHNOLGY | Alldatasheet

Document overview

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Technical content

N-Channel Enhancement Mode MOSFET Feature  30V/4.5A, RDS(ON) = 35mΩ(MAX) @VGS = 10V . RDS(ON) =40mΩ(MAX) @VGS = 4.5V . RDS(ON) =55mΩ(MAX) @VGS = 2.5V .  Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged.  SOT- 23 for Surface Mount Package. SOT-23

Applications

  • Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings T A =25 Unless Otherwise noted Parameter Symbol Limit Units Drain-Source V oltage V DS V Gate-Source V oltage V GS ±12 V Drain Current-Continuous I D 4.5 A

Electrical Characteristics

T A =25 Unless Otherwise noted Parameter Symbol Test Conditions Min Typ. Max Units Off Characteristics Drain to Source Breakdown V oltage BVDSS VGS=0V , ID=250 μA V Zero-Gate V oltage Drain Current IDSS VDS=30V , VGS=0V μA Gate Body Leakage Current, Forward IGSSF VGS=12V , VDS=0V 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-12V , VDS=0V -100 nA On Characteristics Gate Threshold V oltage VGS(th) VGS= VDS, ID=250µA 0.6 1.5 V Static Drain-source On-Resistance RDS(ON) VGS =10V , ID =5.8 A mΩ VGS =4.5V , ID =5 A mΩ VGS =2.5V , ID =4 A mΩ Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward V oltage VSD VGS =0V , IS=1.25 A 1.2 V SKML2502 1 of 4 REV.08

Figure 5．On-Resistance vs. Gate-to-Source Figure 6 ．Source-Drain Diode Forward Voltage Voltage SKML2502 3 of 4 REV.08

Package Outline Dimensions (UNIT: mm) SOT-23 SKML2502 4 of 4 REV.08