SKM900GA12E4 SEMIKRON | Alldatasheet
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IGBT4 = 4. generation medium fast trench IGBT (Infineon) CAL4 = Soft switching 4. generation CAL-diode Isolated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 12kHz UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Switched reluctance motor Remarks Case temperature limited to Tc = 125°C max. Recommended T op = -40 ... +150°C Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj = 25 °C 1200 V IC Tj = 175 °C Tc = 25 °C 1305 A Tc = 80 °C 1003 A ICnom 900 A ICRM ICRM = 3xICnom 2700 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc = 25 °C 871 A Tc = 80 °C 651 A IFnom 800 A IFRM IFRM = 3xIFnom 2400 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 3520 A Tj -40 ... 175 °C Module It(RMS) Tterminal = 80 °C 500 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC = 900 A VGE = 15 V chiplevel Tj = 25 °C 1.83 2.08 V Tj = 150 °C 2.23 2.44 V VCE0 chiplevel Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE = 15 V chiplevel Tj = 25 °C 1.14 1.31 m Ω Tj = 150 °C 1.70 1.82 m Ω VGE(th) VGE=VCE, IC = 32.8 mA 5 5.8 6.5 V ICES VGE = 0 V VCE = 1200 V Tj = 25 °C 5 mA Tj = 150 °C mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 54.4 nF Coes f = 1 MHz 3.52 nF Cres f = 1 MHz 3.00 nF QG VGE = - 8 V...+ 15 V 5000 nC RGint Tj = 25 °C 0.9 Ω td(on) VCC = 600 V IC = 900 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω di/dton = 6900 A/µs di/dtoff = 5600 A/µs Tj = 150 °C 220 ns tr Tj = 150 °C 112 ns Eon Tj = 150 °C 130 mJ td(off) Tj = 150 °C 652 ns tf Tj = 150 °C 139 ns Eoff Tj = 150 °C 121 mJ Rth(j-c) per IGBT 0.035 K/W
2 Rev. 3 – 09.07.2014 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF = 900 A VGE = 0 V chiplevel Tj = 25 °C 2.31 2.65 V Tj = 150 °C 2.31 2.64 V VF0 chiplevel Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V rF chiplevel Tj = 25 °C 1.1 1.3 m Ω Tj = 150 °C 1.6 1.7 m Ω IRRM IF = 900 A di/dtoff = 7900 A/µs VGE = ±15 V VCC = 600 V Tj = 150 °C 576 A Qrr Tj = 150 °C 124 µC Err Tj = 150 °C 53 mJ Rth(j-c) per diode 0.07 K/W Module LCE 15 20 nH RCC'+EE' terminal-chip TC = 25 °C 0.18 m Ω TC = 125 °C 0.22 m Ω Rth(c-s) per module 0.02 0.038 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm M4 1.1 2 Nm w 330 g SEMITRANS® 4 GA IGBT4 Modules SKM900GA12E4 IGBT4 = 4. generation medium fast trench IGBT (Infineon) CAL4 = Soft switching 4. generation CAL-diode Isolated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 12kHz UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Switched reluctance motor Remarks Case temperature limited to Tc = 125°C max. Recommended T op = -40 ... +150°C Product reliability results valid for Tj = 150°C
© by SEMIKRON Rev. 3 – 09.07.2014 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
4 Rev. 3 – 09.07.2014 © by SEMIKRON Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
© by SEMIKRON Rev. 3 – 09.07.2014 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. SEMITRANS 4 GA