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Technical content

Features

  • V-IGBT = 6. Generation Trench V-IGBT (Fuji)
  • CAL4 = Soft switching 4. Generation CAL-diode
  • Isolated copper baseplate using DBC technology (Direct Copper Bonding)
  • UL recognized, file no. E63532
  • Increased power cycling capability
  • With integrated gate resistor
  • Low switching losses at high di/dt Typical Applications*
  • A C i n v e r t e r d r i v e s
  • U P S
  • Electronic welders Remarks
  • Case temperature limited to T c = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =2 5° C 1200 V IC Tj = 175 °C Tc =2 5° C 114 A Tc =8 0° C 87 A ICnom 75 A ICRM ICRM = 3xICnom 225 A VGES -20 ... 20 V tpsc VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj =1 2 5° C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =2 5° C 97 A Tc =8 0° C 73 A IFnom 75 A IFRM IFRM = 3xIFnom 225 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 430 A Tj -40 ... 175 °C Module It(RMS) Tterminal =8 0° C 200 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =7 5A VGE =1 5V chiplevel Tj =2 5° C 1.85 2.30 V Tj =1 5 0° C 2.25 2.55 V VCE0 Tj =2 5° C 0.94 1.04 V Tj =1 5 0° C 0.88 0.98 V rCE VGE =1 5V Tj =2 5° C 12.13 16.8 m  Tj =1 5 0° C 18.27 20.93 m  VGE(th) VGE=VCE, IC = 3 mA 5.5 6 6.5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA Tj =1 5 0° C mA Cies VCE =2 5V VGE =0V f=1M H z 4.5 nF Coes f=1M H z 0.44 nF Cres f=1M H z 0.442 nF QG VGE = - 8 V...+ 15 V 830 nC RGint 10.0  td(on) VCC = 600 V IC =7 5A VGE =± 1 5V RG on =1 . 3 RG off =1 . 3 di/dton = 3900 A/µs di/dtoff =1 0 2 0A / µ s du/dtoff = 9000 V/ µs Tj =1 5 0° C 258 ns tr Tj =1 5 0° C 32 ns Eon Tj =1 5 0° C 6.7 mJ td(off) Tj =1 5 0° C 388 ns tf Tj =1 5 0° C 62 ns Eoff Tj =1 5 0° C 7.1 mJ Rth(j-c) per IGBT 0.38 K/W

2 Rev. 5 – 23.03.2011 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =7 5A VGE =0V chip Tj =2 5° C 2.17 2.49 V Tj =1 5 0° C 2.11 2.42 V VF0 Tj =2 5° C 1.3 1.5 V Tj =1 5 0° C 0.9 1.1 V rF Tj =2 5° C 11.6 13.2 m  Tj =1 5 0° C 16.1 17.6 m  IRRM IF =7 5A di/dtoff =2 9 5 0A / µ s VGE =± 1 5V VCC = 600 V Tj =1 5 0° C 85 A Qrr Tj =1 5 0° C 10 µC Err Tj =1 5 0° C 4.2 mJ Rth(j-c) per diode 0.58 K/W Module LCE 30 nH RCC'+EE' terminal-chip TC =2 5° C 0.65 m  TC =1 2 5° C 1m  Rth(c-s) per module 0.04 0.05 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M5 2.5 5 Nm Nm w 160 g SEMITRANS® 2 GB SKM75GB12V

  • V-IGBT = 6. Generation Trench V-IGBT (Fuji)
  • CAL4 = Soft switching 4. Generation CAL-diode
  • Isolated copper baseplate using DBC technology (Direct Copper Bonding)
  • UL recognized, file no. E63532
  • Increased power cycling capability
  • With integrated gate resistor
  • Low switching losses at high di/dt Typical Applications*
  • A C i n v e r t e r d r i v e s
  • U P S
  • Electronic welders Remarks
  • Case temperature limited to T c = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°

© by SEMIKRON Rev. 5 – 23.03.2011 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 5 – 23.03.2011 © by SEMIKRON Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge

© by SEMIKRON Rev. 5 – 23.03.2011 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. SEMITRANS 2 GB