SKM50GB121D

SKM50GB101D SEMIKRON | Alldatasheet

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‘Absolute Maximum Ratings Values 1 SEMITRANS® M Symbol _| Conditions ") «101D ..121D! Units ; IGBT Modules Voes 7000 1200 V-| SKM 50 GB 101 D Voor | Ror = 20 kQ 1000 1200 v SKM 50 GAL 101 D ©) Ic Tease = 25/80 °C 50/34 Va Temes anpre 0. : SKM 20 GAL tet §) 'Vaes ‘ | £ 6) Pit" per IGBT, Tease = 25 °C 400 w | SKM50GAR 121D 9 ‘Tj, Tote —55.. +150 Cc 7.20 - !Visot AC, 1 min 2.500 vi | TS Bl ‘humidity | DIN 40 040 | Class F : tolimate “DIN IEC 68 T.1 | 55/150/56 Inverse Diode : a Ire= lo j ' 50 A E> 4 FE lem=— lon 100 A, 32 . Characteristics : Be Symbol | Conditions? min. typ. max. | Units | LEE Vieryces | Vee=0, lc=1mA i2Vees — - Vv <5 Vaeith) | Vee = Vee, lo= 4 mA | 45 5,5 65 Vv x Ices | Vee =0 } T= 25°C | - 0,01 1 mA 3 jVoe=Vors J Tj= 125°C © - = 4 mA Ices! Vee = 20 V, Vee =0 - - 100 | mA Voesat ‘Vaz =15V } Tj= 25° 3 35 vo, ell 8) J ‘Io=50A Tj=150°C | - 40 45 v Gis | Voe = 20 V, lo = 50A, {17 24 - ji s ra a 6 Cc or IGBT. = = 100 Fo) ! Oo |) Vee=0 - 6 = nF GB GAL GAR Coes } Vee = 25V - 480 = pF Cres f=1MHz - 200 - pF Features Loe - - 20 nH * MOS input (voltage controlled) ta(on) Voc = 600 V nn: ns * Nchannel te Vor = 15V - 1509 — ns + Low saturation voltage tavom Ic=50A — 250 3/2504) — ns Very low tail current | t » | Reon = Reott = 3,3. 2 ! _ 400 1100 4) ns} ¢ Low semperature sensitivity = 125% - - 1 mW . ' Wore 5 |) Te t26°C > & 4 | MWe . © High short cirouit capability Mews : re « Nolatch-up ‘Inverse Diode ... 101 D ' * Fast inverse diodes [Wea Vec tem 50 A.Vog= 0; (Tin125°C)) - 1,8(1,8) 24 | V * Isolated copper baseplate {ter {T= 25°C - - - ns * Large clearances and creepage ! | T= 125°C?) - 20 - {| ms , distances 1 Qe Tj = 25/125 °C”) = 2B = | HE | + ULrecognized, tle no. E 63 532 ‘fe ife=tr/ (te—ti) - 17 | Inverse Diode ... 121 D Typical Applications - Ve = Vec } Ire 50 ANag = 0; (T=125°C)) - 2,4(1,9) 29 v . Suited mode power: supplies 7 = 125°C? . - 250 - ns © Self-commutated inverters fs f= til (tr = - a « Inductive heating frermal Oharactenttcs ost ecw * Uninterruptible power supplies tnje per IG | St) SCIW | General power switching Rite per diode f= - 99 | cw ! applications Ritheh per module ios 0,05 | °CW" _="n. Electronic welders Cases and mechanical data see page B 6 — 102 9) resistive load * Pulse frequencies above 15 kHz ) Tease = 25 °C, unless otherwise specified 4) inductive load 2) 1p =—Ic, Va = 600 V, —dir/dt = 800 Als, Veze=0 ©) see fig. 21; Raott = 6,3 2 ©) The free-wheeling diodes of the GAL and GAR types have the data of the inverse diodes of SKM 75 ... © by SEMIKRON ~~ B6-95

Yor! Vor} ——— ol ‘el | ton. 1 tort ‘ lot ! | | i ee Wor a= Jt Vog- dt i 1 ft rv | i | \\ I ! Wor20 [to Voe- at iI i SS = ami amt pot { ! ff oe 9 talon) tr tao) tr Fig. 21 Switching times and turn-off energies

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w EE ECT 38K 60 GB ... D mil J*SKM 50 GB. D_| | ot 4 e wo EEE = EFI erate —{—f4—b-} 4 oe oe Vee: 18 7\\ BEESSEE EEE HEE See EE EEC SSEE EE I~ 10]--——=T} = 28°C +] | 200} fF NE P| on Ct oe oe EESEEE m2 5174 es a S| | = — 4 WAI -REEE EEF yl re | fo} ff . 493 a HH a J Al LAS A SO = SI on 5} a i pai > da eo NI 7 SAITO ane oe ee rae aS 33 400 FREER EEE . 4. ZS as Perr er Woo | - |S Foe Or No erry | {| | PEER ESE FN CERES Err De oe 0080 Da er a er) Fig. 22 Rated power dissipation vs. temperature Fig. 23 Turn-on energy dissipation per pulse 8 TOT pe pepe 10? rE CRESS Sem . - y Trae rea 1 THT I} oii a wo elt Lt uu, i ° rer he a 2 a Sa Series iesorilll COECCee ree CATT i i Hi ail EERE EEE |, w SZUMNE NNT DS TTA Il Beeeeeoe as 4 tH CEPTS SECT ELA immeezapsse THIN (| eet FREE EEEIPOCER EEN esti ve CAZES Ere RHE Hil on err eho HH CnC EeN Ht Ph i a vos LUTTE T TTT TTT LI oig 10 20~« a= SSB 10? Voge 107 1 FV 108 Fig. 24 Turn-off energy dissipation per pulse Fig. 25 Maximum safe operating area B6-96 © by SEMIKRON

eo EECCA PAREREREEAUUAGURERERESAENG! ETRE TRL TAALE colt} TTT Ty HEHE SD HAH PEP PP TAUAAEEASETERRDNCCARTCUEY wt LPT TTT TTT TE » HOS eer et PALS [Titi ty yyy CECT PPE ESS COC fas HE PH PECCECEEEEEE ET, eee eet BECCEEEECEEEE THEE Et Fig. 26 Turn-off safe operating area Fig. 27 Rated current vs. pulse frequency 50 — 7 —s 4 HERE wet marae | ie rr] ‘ jouer

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vot tt LTT ETN TT] wot Lear TET LT | LT itty tty TPT tN | Pee iT e-LELT TT ETT TEN wort LTTE TTT | ett tT yr TT | LLU SLOPE, “Seo Fig, 28 Rated current vs. temperature Fig. 29 Short-circuit current vs. turn-on gate voltage rT oy CoCo 0 7 TTT "LLL I 0 eA [EEE ee ov a reel em Aa COC PLCC 2° SKM 50 GB .. D+ ot ttt tt eer oo INI a Li] TTT errr ry Son) SevaeSeeeeenees COA EP Cece zc SEE Ee PIA TT «COC LTA SRRRe EERE n COAPZECCCP RET ETE Er rot CLEC! «HERE CE oFEErereeEePRee | APE

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“I }skM 50 GB ... D man ia Hl vf g’SKM 50 enn D ——— 1: ssore| hraranl BERT RREREE LEH pear tf | sol LTTE Tey eo LLCO ET Hee RL fs EAE | _ | E | a o - | HE LPP | I I H aa Ly] b-HEEEEER i: nee : EEE eee CHER SEELEY 25 7 | LTT] HH “TET CPREEEES A EEE CT oe SSE E EES) CECE | am AER oS le bee EAE Noel | | ff } H oL LITT TA TET TTT ot LTT - | OMe 8 0 sv 20 8 Vee 0 6 20 Fig. 32 Transfer characteristic Fig. 33 Saturation characteristics STI 1 mor 20 Fi re 5 COLT Lh PEL 9 4 AAA HEE [EEE EEE EEEL LE [face « seu EL]

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SENBNANGHEEREE [| eee danneadeanan CONE r| © PrP eErer aaa a BEBNBSEXG HEE HY WEEE ETE ‘LOAN SST HEH -EEEEH HEHE PEREEREEREEE fi eee ye aan HEEEEE RECAPS SES “EEE EEE an ae LL Penoeeeeaea HEH vet AC 4 aaa seCCCCCCCCeCeCeere Pr “EEA HAE ELE : o LTT TTT TT CPT TTT ° CECCPre rere oR 20 3 A ao 0 Oy, 100 200 300 a0 400 Fig. 34 Rate of rise of collector current Fig. 35 Gate charge characteristic \\SSSSSSSaasaSaesa=san EPP ERE EER EEEEFEFEEPEEEEEE) BEESEREEE EEE EEE Cont “SKM 50 GB .. DLL EH FERRER EEEEEEEE 1 " wD: F] eee i . NCgUAAAAAHRAAGAAAAAT CEE. Jerr le || oA TT Heer eee REP RSS SERRE RES EEEE Pea AREER RASS EEEEERE FE il ESSERE EEE Peete of PEEECEELL LLL EE PEEL CPPS ree Cr PEEEEEEPRSEEE EEE G ES CCCP PERE HEFT ET EEeLceeeePer | oe EEEEEEL EER Te SS SS==———= SSS See aS | i ft manent il i FEEEEEEEEEEERREE TEC oo LEEEEEET EIT | LLL EL FEEEEREEEEE EER EH : agga0giescaedall : ° y 7 lott H F ({-skm s0 ap ... o{ {1 i « EEEY HTH [pana wee || ol LETT soot LLLETELIEELELT i °° Vor 10 20 3 yO 0 Rg 10 a Fig. 36 Capacitances vs. collector-emitter voltage Fig. 37 Switching times vs. gate resistor Be-% OOS © by SEMIKRON

———r—re nee 1-39-31 - 100 100 uae a T 7 TOE “ES-skm 60 ap tot vt 1}414 “FS-skm 50 ep 121 oj} +++ eo | ——1- 0 annannn 4. 80 UEC =oa mee CECE 1s [aap eaee CEE poo CCC ye] Ann on CeCe Ep oeee ree ere eo FER EEEEEE HEHEHE H7K- FEE CCCCCCCeCe eA CIN ECACC Chore 20 | BEEECHEEHEEH GEE EH Seeeeeeee see cece

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ECCECCCCCC eer] COCCCCeCAC COCCECCCeCC eee CeCe CEE eee eee FCECCEEEC ee a COE CEE Eee ao EEC ECE COCOA Ce CCCP Sonens 4e5 4a eee Fann | ° HES Cee ° HEEBEER EEE EHH ove 08 1 1s rv Re oe 2 sy 4 Fig. 38 a Diode forward characteristic Fig. 38 b Diode forward characteristic c[FSKM 60 GB 101 DBP a neue [SKM 60 Ge 121 p [TTT T) POCO ere 7 PCCCEP Eee oor ST Cece cr HEE EP RPT iets SEER EEE TESS saperecadser-auGen a panera eee eT Nera Pec eer CR bay bas Sn) 46 Crier eer . “ETC ae Woe ev sac’ b2eaCeaue aera - - 4 ae COC CCT A064" c/ Sense COE IL te 50 MACE i _ mre PALE «9 | CeCe eere 0 Leet rrr Coco Cor Cee oer ry arta JLo es eerie e2cencesefcauennee | pee rie u Zeaese= Le ou ey on EFT mee) — (CeCe . oC LEE EEC e err im oO -avat 600 7000 1800 A7ys 2000 956 -ay7e 00 750 00 Avy 1250 Fig. 39 a Diode recovered charge Fig. 39 b Diode recovered charge 100 18 eo eS a ween LTT it fy Pre [Tors itd Po Ee septa re | of Ter Tt PS <! =| eS eH HH ee eee EE Ce eS Le EEE Koo A Fd | Leet eaan ee HEBER arr pd Cry ee a a cl 2 Abeer EAA LETTE PrP eee Pe eee TEC RERREEE SoS Cae Heer Coo "rae H-F a] “SKM 50 GB 101 D ‘ea 1. st 2 oLLE LTT 12’ SKM 50 GB 121 D op 20 800A a a a ee a) Fig. 40 a Diode peak reverse recovery current (Ir) Fig. 40 b Diode peak reverse recovery current (Ir) © by SEMIKRON B6-99

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ms cdc eeeenaseeeegee SS URBRERERERERE ol b292,2 EEEEEEEEA EE TUTTI 0 -agrat 500 7000 7600 Avs 2000 Ys0-agrat 500 766 1000 A7/ye 7250 Fig. 41 a Diode peak reverse recovery current (-dir/dt) _ Fig. 41 b Diode peak reverse recovery current (-di/dt) 3 29 rere [T Fes} 82 1] ue 4 “(}'SKM 50 GB 101 D Le “EL .skM 60 GB 101 D = a4 oce 600¥ TT 2 [veces #0ov ARE Noe TOT a vee Ee seer are er soe RET sche HEH aon DELETE ceed COLCA eer "re ieeeccoeadaeccrase Caer Ceri] EAE e Str rea Ler Le ‘st nD Pt bri TT 4 FO Bibecpectansecensices 68 hee tf | EEE 1 454 tert a sc A A | Maes eaceoseee teh EEE ER EE EEE EEE NEEL Gee c epee tenecsn ea 91 EEE EEEEEEEE™Enge=0E=e Ee Eee ert i, a a on =a wen LL] PEEP Erererr TT Tr et Won PEE EERE oF ol LEO UT) ° EEEEE EERE REE EEE EH ip 10 ET) wo A 80 oe 3080 ao A 80 Fig. 42 a Diode turn-off energy dissipation per pulse Fig. 42 b Diode turn-off energy dissipation per pulse B6-100 © by SEMIKRON

a $-skm 50 GB... D pee ae iui “PIR oa L eee mt a A o3 [FEET HEHT His EHH HE Pr Seer ET AE Con te EHH FHI er Ch oo CHIME HHI EH A EHH CoCo Fo See Samet ame ct ee 2 oo FE EZ ea CoCo Zoo EET eer PHP torre o eect Pe rE to* tt 109 102 107 10° 5 108 Fig. 51 Transient thermal impedance CC —— See sari] ERR SE Se Sect eee ste a sti SETHE BS ES Serene cers tty 5 ez0 a oS 1m 50 cs .. od SE atti ta ene ee aa a a CENT TI 4.4 al see ZL LAE ——eet H ona meail| Pail aA iit we LINE TUTE TUTTE TUTTI TTT PTT 0% 104 108 1 107 109 3h Fig. 52 Thermal impedance under pulse conditions © by SEMIKRON B6-101

SEMIKRON INC _ so, T-39-31 SKM 50 GB 101 D UL recognized, file no. E 63 532 SKM 50 GB 121 D 2.8x0.5 | Case D 27 (| i A oe eee Wy" Boa | 66.4( 1] 80 i MB a Bi} akg | ee el Y Lae [ee ta] * 67 J —J ? Ba" te 2. 3 c2 2 ct : Js at : Dimensions in mm : ' SKM 50 GAL 101 D | * SKM 50 GAL 121D SKM 50 GAR 121 D Case D33 cen Case D 34 7 ko * . 2 . Br ae ae : AL * Fs 1 2,

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l i 1 This Is an electrostatic discharge |Mechanical Data i ; sensitive device (ESDS). Please, |Symbol | Conditions Values Units | observe the International standard : mine max. IEC 747-1, Chapter IX, Mi to heatsink, SI Units 1 3 - 6 Nm : | to heatsink, US Units 6287 = 88 | bain, § Me for terminals, S! Units * 25 - 5 Nm for terminals US Units ; 22 - 44 | Ib.in. » a too = 5x9,81 | ms? | w - - 20] g The free-wheeling diode has the data of the Inverse diode of SKM 75 ... B6-102 ©by SEMIKRON .