SKM400GM17E4 SEMIKRON | Alldatasheet

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© by Semikron Danfoss Rev. 3.0 – 11.02.2025 1 SEMITRANS® 3 GM IGBT4 Modules SKM400GM17E4 Features* • IGBT4 = 4th generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4th generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequencies up to 8kHz • UL recognized, file no. E63532 Typical Applications • Matrix Inverter • Bidirectional switch Remarks • Case temperature limited to TC = 125°C max. • Recommended T j,op = -40 ... +150°C • Product reliability results valid for T j = 150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj = 25 °C 1700 V IC Tj = 175 °C Tc = 25 °C 614 A Tc = 80 °C 474 A ICnom 400 A ICRM 1200 A VGES -20 ... 20 V tpsc VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode VRRM Tj = 25 °C 1700 V IF Tj = 175 °C Tc = 25 °C 443 A Tc = 80 °C 327 A IFRM 800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2340 A Tj -40 ... 175 °C Module It(RMS) 500 A Tstg module without TIM -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC = 400 A VGE = 15 V chiplevel Tj = 25 °C 1.92 2.20 V Tj = 150 °C 2.30 2.60 V VCE0 chiplevel Tj = 25 °C 0.80 0.90 V Tj = 150 °C 0.70 0.80 V rCE VGE = 15 V chiplevel Tj = 25 °C 2.8 3.3 m Ω Tj = 150 °C 4.0 4.5 m Ω VGE(th) VGE=VCE, IC = 16 mA 5.2 5.8 6.4 V ICES VGE = 0 V, V CE = 1700 V, Tj = 25 °C 5 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 32.0 nF Coes f = 1 MHz 1.36 nF Cres f = 1 MHz 1.16 nF QG VGE = - 8 V...+ 15 V 3200 nC RGint Tj = 25 °C 1.9 Ω td(on) VCC = 1200 V IC = 400 A VGE = +15/-15 V RG on = 2 Ω RG off = 1 Ω di/dton = 10000 A/ µs di/dtoff = 2300 A/µs dv/dt = 5600 V/µs Tj = 150 °C 280 ns tr Tj = 150 °C 45 ns Eon Tj = 150 °C 157 mJ td(off) Tj = 150 °C 760 ns tf Tj = 150 °C 140 ns Eoff Tj = 150 °C 180 mJ Rth(j-c) per IGBT 0.066 K/W Rth(c-s) per IGBT, P12 (reference) 0.036 K/W Rth(c-s) per IGBT, HP-PCM 0.019 K/W

2 Rev. 3.0 – 11.02.2025 © by Semikron Danfoss SEMITRANS® 3 GM IGBT4 Modules SKM400GM17E4 Features* • IGBT4 = 4th generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4th generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequencies up to 8kHz • UL recognized, file no. E63532 Typical Applications • Matrix Inverter • Bidirectional switch Remarks • Case temperature limited to TC = 125°C max. • Recommended T j,op = -40 ... +150°C • Product reliability results valid for T j = 150°C Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel Tj = 25 °C 2.00 2.40 V Tj = 150 °C 2.16 2.57 V VF0 chiplevel Tj = 25 °C 1.32 1.56 V Tj = 150 °C 1.08 1.22 V rF chiplevel Tj = 25 °C 1.71 2.1 m Ω Tj = 150 °C 2.7 3.4 m Ω IRRM IF = 400 A di/dtoff = 10100 A/ µs VGE = -15 V VCC = 1200 V Tj = 150 °C 615 A Qrr Tj = 150 °C 150 µC Err Tj = 150 °C 130 mJ Rth(j-c) per diode 0.13 K/W Rth(c-s) per diode, P12 (reference) 0.044 K/W Rth(c-s) per diode, HP-PCM 0.027 K/W Module LCE 15 nH RCC'+EE' measured per switch TC = 25 °C 0.55 m Ω TC = 125 °C 0.85 m Ω Rth(c-s)1 calculated without thermal coupling, P12 (reference) 0.0099 K/W Rth(c-s)2 including thermal coupling, Ts underneath module, P12 (reference) 0.0162 K/W Rth(c-s)2 including thermal coupling, Ts underneath module, HP-PCM 0.0088 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm - Nm w 325 g

© by Semikron Danfoss Rev. 3.0 – 11.02.2025 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature Ic = f (Tc) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 0 1000 2000 3000 4000 [nC] [V] ICpulse = 400 A Vcc = 1200 V VGE QG

4 Rev. 3.0 – 11.02.2025 © by Semikron Danfoss Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge

© by Semikron Danfoss Rev. 3.0 – 11.02.2025 5 SEMITRANS 3 GM

6 Rev. 3.0 – 11.02.2025 © by Semikron Danfoss IMPORTANT INFORMATION AND WARNINGS This is an electrostatic discharge sensitive device (ESDS) according to international standard IEC 61340. *The specifications of Semikron Danfoss products may not be considered as any guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of Semikron Danfoss products describe only the usual characteristics of Semikron Danfoss products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Resulting from this, application adjustments of any kind may be necessary. Any user of Semikron Danfoss products is responsible for the safety of their applications embedding Semikron Danfoss products and must take adequate safety measures to prevent the applications from causing any physical injury, fire or other problem, also if any Semikron Danfoss product becomes faulty. Any user is responsible for making sure that the application design and realization are compliant with all laws, regulations, norms and standards applicable to the scope of application. Unless otherwise explicitly approved by Semikron Danfoss in a written document signed by authorized representatives of Semikron Danfoss, Semikron Danfoss products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Semikron Danfoss does not convey any license under its or a third party’s patent rights, copyrights, trade secrets or other intellectual property rights, neither does it make any representation or warranty of non-infringement of intellectual property rights of any third party which may arise from a user’s applications.