DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • V-IGBT = 6. Generation Trench V-IGBT (Fuji)
  • CAL4 = Soft switching 4. Generation CAL-diode
  • Isolated copper baseplate using DBC technology (Direct Copper Bonding)
  • UL recognized, file no. E63532
  • Increased power cycling capability
  • With integrated gate resistor
  • Low switching losses at high di/dt Typical Applications*
  • A C i n v e r t e r d r i v e s
  • U P S
  • Electronic welders Remarks
  • Case temperature limited to T c = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =2 5° C 1200 V IC Tj = 175 °C Tc =2 5° C 612 A Tc =8 0° C 467 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V tpsc VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj =1 2 5° C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =2 5° C 440 A Tc =8 0° C 329 A IFnom 400 A IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 1980 A Tj -40 ... 175 °C Module It(RMS) Tterminal =8 0° C 500 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =4 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.75 2.20 V Tj =1 5 0° C 2.20 2.50 V VCE0 Tj =2 5° C 0.94 1.04 V Tj =1 5 0° C 0.88 0.98 V rCE VGE =1 5V Tj =2 5° C 2.02 2.9 m  Tj =1 5 0° C 3.30 3.80 m  VGE(th) VGE=VCE, IC = 16 mA 5.5 6 6.5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA Tj =1 5 0° C mA Cies VCE =2 5V VGE =0V f=1M H z 24.04 nF Coes f=1M H z 2.36 nF Cres f=1M H z 2.356 nF QG VGE = - 8 V...+ 15 V 4420 nC RGint 1.9  td(on) VCC = 600 V IC =4 0 0A VGE =± 1 5V RG on =3  RG off =3  di/dton = 9800 A/µs di/dtoff =5 0 0 0A / µ s du/dtoff = 7600 V/ µs Tj =1 5 0° C 350 ns tr Tj =1 5 0° C 60 ns Eon Tj =1 5 0° C 39 mJ td(off) Tj =1 5 0° C 700 ns tf Tj =1 5 0° C 65 ns Eoff Tj =1 5 0° C 42 mJ Rth(j-c) per IGBT 0.072 K/W

2 Rev. 3 – 23.03.2011 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF = 400 A VGE =0V chip Tj =2 5° C 2.20 2.52 V Tj =1 5 0° C 2.15 2.47 V VF0 Tj =2 5° C 1.3 1.5 V Tj =1 5 0° C 0.9 1.1 V rF Tj =2 5° C 2.3 2.5 m  Tj =1 5 0° C 3.1 3.4 m  IRRM IF = 400 A di/dtoff =9 5 0 0A / µ s VGE =± 1 5V VCC = 600 V Tj =1 5 0° C 450 A Qrr Tj =1 5 0° C 58 µC Err Tj =1 5 0° C 26 mJ Rth(j-c) per diode 0.14 K/W Module LCE 15 20 nH RCC'+EE' terminal-chip TC =2 5° C 0.25 m  TC =1 2 5° C 0.5 m  Rth(c-s) per module 0.02 0.038 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm Nm w 325 g SEMITRANS® 3 GB SKM400GB12V

  • V-IGBT = 6. Generation Trench V-IGBT (Fuji)
  • CAL4 = Soft switching 4. Generation CAL-diode
  • Isolated copper baseplate using DBC technology (Direct Copper Bonding)
  • UL recognized, file no. E63532
  • Increased power cycling capability
  • With integrated gate resistor
  • Low switching losses at high di/dt Typical Applications*
  • A C i n v e r t e r d r i v e s
  • U P S
  • Electronic welders Remarks
  • Case temperature limited to T c = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°

© by SEMIKRON Rev. 3 – 23.03.2011 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 3 – 23.03.2011 © by SEMIKRON Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge

© by SEMIKRON Rev. 3 – 23.03.2011 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. SEMITRANS 3 GB