SKM300GB17E4 SEMIKRON | Alldatasheet

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Technical content

Features

• IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequenzies up to 8kHz • UL recognized, file no. E63532 Typical Applications* •A C i n v e r t e r d r i v e s •U P S • Electronic welders •W i n d p o w e r • Public transport Remarks • Case temperature limited to Tc = 125°C max. • Recommended T op = -40 ... +150°C • Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =2 5° C 1700 V IC Tj = 175 °C Tc =2 5° C 476 A Tc =8 0° C 368 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V tpsc VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =2 5° C 314 A Tc =8 0° C 231 A IFnom 300 A IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 1836 A Tj -40 ... 175 °C Module It(RMS) 500 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =3 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.90 2.20 V Tj =1 5 0° C 2.30 2.60 V VCE0 chiplevel Tj =2 5° C 0.8 0.9 V Tj =1 5 0° C 0.7 0.8 V rCE VGE =1 5V chiplevel Tj =2 5° C 3.67 4.33 m Ω Tj =1 5 0° C 5.33 6.00 m Ω VGE(th) VGE=VCE, IC = 12 mA 5.2 5.8 6.4 V ICES VGE =0V VCE = 1700 V Tj =2 5° C 4m A Tj =1 5 0° C mA Cies VCE =2 5V VGE =0V f=1M H z 27.2 nF Coes f=1M H z 1.06 nF Cres f=1M H z 0.88 nF QG VGE = - 8 V...+ 15 V 2400 nC RGint Tj =2 5° C 2.1 Ω td(on) VCC = 1200 V IC =3 0 0A VGE = +15/-15 V RG on =2 Ω RG off =2 Ω di/dton = 10209 A/ µs du/dt = 4580 V/µs Tj =1 5 0° C 207 ns tr Tj =1 5 0° C 37.5 ns Eon Tj =1 5 0° C 88 mJ td(off) Tj =1 5 0° C 756 ns tf Tj =1 5 0° C 154 ns Eoff Tj =1 5 0° C 121 mJ Rth(j-c) per IGBT 0.083 K/W

2 Rev. 1 – 06.03.2015 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF = 300 A VGE =0V chiplevel Tj =2 5° C 2.00 2.40 V Tj =1 5 0° C 2.14 2.56 V VF0 chiplevel Tj =2 5° C 1.32 1.56 V Tj =1 5 0° C 1.08 1.22 V rF chiplevel Tj =2 5° C 2.3 2.8 m Ω Tj =1 5 0° C 3.5 4.5 m Ω IRRM IF = 300 A di/dtoff =8 6 1 1A / µ s VGE =± 1 5V VCC = 1200 V Tj =1 5 0° C 489 A Qrr Tj =1 5 0° C 102 µC Err Tj =1 5 0° C 77 mJ Rth(j-c) per diode 0.19 K/W Module LCE 15 nH RCC'+EE' terminal-chip TC =2 5° C 0.55 m Ω TC =1 2 5° C 0.85 m Ω Rth(c-s) per module 0.02 0.038 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm Nm w 325 g SEMITRANS® 3 GB IGBT4 Modules SKM300GB17E4 • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequenzies up to 8kHz • UL recognized, file no. E63532 Typical Applications* •A C i n v e r t e r d r i v e s •U P S • Electronic welders •W i n d p o w e r • Public transport Remarks • Case temperature limited to Tc = 125°C max. • Recommended T op = -40 ... +150°C • Product reliability results valid for Tj = 150°C

© by SEMIKRON Rev. 1 – 06.03.2015 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 1 – 06.03.2015 © by SEMIKRON Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge

© by SEMIKRON Rev. 1 – 06.03.2015 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. SEMITRANS 3 GB