SKM260MB170SCH17 SEMIKRON | Alldatasheet
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© by SEMIKRON Rev. 1.0 04.11.2020 1 SEMITRANS® 3 MB SiC MOSFET Module SKM260MB170SCH17 Features* Full Silicon Carbide (SiC) power module High reliability 2 nd Generation SiC MOSFETs Optimized for fast switching and lowest power losses External SiC Schottky Barrier Diode embedded Insulated copper baseplate using DBC technology (Direct Bonded Copper) Improved thermal performances with Aluminum Nitride (AlN) substrate UL recognized, file no. E63532 Typical Applications High frequency power supplies AC inverters Traction APU EV Chargers Industrial Test Systems Remarks Case temperature limited to TC = 125°C max. Recommended T jop = -40 ... +150°C Gate-Source SURGE VOLTAGE (tsurge<300ns), VGS_surge = -10V ... +26V Absolute Maximum Ratings Symbol Conditions Values Unit MOSFET VDSS Tj = 25 °C 1700 V ID Tj = 175 °C Tc = 25 °C 378 A Tc = 80 °C 301 A IDM PW ≤ 10µs, Duty cycle ≤ 1% 980 A IDM,repetitive 790 A VGS -6 ... 22 V Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Inverse diode VRRM Tj = 25 °C 1700 V IF Tj = 175 °C Tc = 25 °C 552 A Tc = 80 °C 428 A IFnom 300 A IFRM 900 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C, including body diode 2030 A Tj -40 ... 175 °C Absolute Maximum Ratings Symbol Conditions Values Unit Module It(RMS) 500 A Tstg module without TIM -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V
2 Rev. 1.0 04.11.2020 © by SEMIKRON SEMITRANS® 3 MB SiC MOSFET Module SKM260MB170SCH17 Features* Full Silicon Carbide (SiC) power module High reliability 2 nd Generation SiC MOSFETs Optimized for fast switching and lowest power losses External SiC Schottky Barrier Diode embedded Insulated copper baseplate using DBC technology (Direct Bonded Copper) Improved thermal performances with Aluminum Nitride (AlN) substrate UL recognized, file no. E63532 Typical Applications High frequency power supplies AC inverters Traction APU EV Chargers Industrial Test Systems Remarks Case temperature limited to TC = 125°C max. Recommended T jop = -40 ... +150°C Gate-Source SURGE VOLTAGE (tsurge<300ns), VGS_surge = -10V ... +26V Characteristics Symbol Conditions min. typ. max. Unit MOSFET V(BR)DSS VGS = 0 V, I D = 1 mA, T j = 25 °C 1700 V VGS(th) VDS = V GS, ID = 57.75 mA 1.6 2.8 4 V IDSS VGS = 0 V, V DS = 1700 V, Tj = 25 °C 1.8 mA IGSS VGS = 22 V, V DS = 0 V 700 nA RDS(on) VGS = 18 V ID = 161 A chiplevel Tj = 25 °C 8.1 10 m Ω Tj = 150 °C 14 m Ω Ciss VGS = 0 V VDS = 800 V f = 1 MHz Tj = 25 °C 27 nF Coss Tj = 25 °C 0.88 nF Crss Tj = 25 °C 0.105 nF RGint Tj = 25 °C 2.1 Ω QG VDD=1000V, VGS=-5 ... 20V, ID = 300 A 1470 nC td(on) VDD = 900 V ID = 300 A VGS = -5 / +20 V RGon = 0.7 Ω RGoff = 0.7 Ω di/dton = 12 kA/µs di/dtoff = 9.5 kA/µs dv/dtoff = 22 kV/µs Tj = 150 °C 64 ns tr Tj = 150 °C 60 ns td(off) Tj = 150 °C 162 ns tf Tj = 150 °C 32 ns Eon Tj = 150 °C 7.59 mJ Eoff Tj = 150 °C 6.21 mJ Rth(j-c) per MOSFET 0.065 K/W Rth(c-s) per MOSFET (λgrease=0.81 W/(m*K)) 0.03 K/W Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VSD IF = 300 A chiplevel Tj = 25 °C 1.65 1.95 V Tj = 150 °C 2.51 2.86 V VF0 chiplevel Tj = 25 °C 1.00 1.10 V Tj = 150 °C 0.86 0.96 V rF chiplevel Tj = 25 °C 2.2 2.8 m Ω Tj = 150 °C 5.5 6.3 m Ω Cj parallel to Coss, f = 1 MHz, VR = 1700 V, Tj = 25 °C 1.026 nF Qc VR = 800 V, di/dtoff = 500 A/µs, Tj = 25 °C 0.95 µC Rth(j-c) per diode 0.056 K/W Rth(c-s) per diode (λgrease=0.81 W/(m*K)) 0.027 K/W
© by SEMIKRON Rev. 1.0 04.11.2020 3 SEMITRANS® 3 MB SiC MOSFET Module SKM260MB170SCH17 Features* Full Silicon Carbide (SiC) power module High reliability 2 nd Generation SiC MOSFETs Optimized for fast switching and lowest power losses External SiC Schottky Barrier Diode embedded Insulated copper baseplate using DBC technology (Direct Bonded Copper) Improved thermal performances with Aluminum Nitride (AlN) substrate UL recognized, file no. E63532 Typical Applications High frequency power supplies AC inverters Traction APU EV Chargers Industrial Test Systems Remarks Case temperature limited to TC = 125°C max. Recommended T jop = -40 ... +150°C Gate-Source SURGE VOLTAGE (tsurge<300ns), VGS_surge = -10V ... +26V Characteristics Symbol Conditions min. typ. max. Unit Module LDS 15 nH RDD'+SS' measured per switch TC = 25 °C 0.55 m Ω TC = 125 °C 0.85 m Ω Rth(c-s)1 calculated without thermal coupling (λgrease=0.81 W/(m*K)) 0.008 K/W Rth(c-s)2 including thermal coupling, Ts underneath module (λgrease=0.81 W/(m*K))
0.013 K/W
Mt to terminals M6 2.5 5 Nm Nm w 325 g
4 Rev. 1.0 04.11.2020 © by SEMIKRON Fig.1: Typ. MOSFET forward output characteristic, incl. RDD'+ SS' Fig. 2: Typ. reverse output characteristic, incl. RDD'+ SS' Fig. 3: Rated current vs. temperature ID = f (TC) Fig. 4: Typ. switching energy E = f (ID) at RG1 Fig. 5: Typ. switching energy E = f (ID) at RG2 Fig. 6: Typ. switching energy E = f (RG) at ID1
© by SEMIKRON Rev. 1.0 04.11.2020 5 Fig. 7: Typ. switching energy E = f (RG) at ID2 Fig. 8: Typ. MOSFET transfer characteristic Fig. 9: Typ. gate charge characteristic Fig. 10: Typ. switching times t = f (ID) at RG1 Fig. 11: Typ. switching times t = f (ID) at RG2 Fig. 12: Typ. switching times t = f (RG) at ID1
6 Rev. 1.0 04.11.2020 © by SEMIKRON Fig. 13: Typ. switching times t = f (RG) at ID2 Fig. 14: Transient thermal impedance
© by SEMIKRON Rev. 1.0 04.11.2020 7 SEMITRANS 3 MB
8 Rev. 1.0 04.11.2020 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.