SKM25GAH125D SEMIKRON | Alldatasheet
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V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Icnom Fast & soft inverse CAL diodes Large clearance (10 mm) and creepage distances (20 mm) Isolated copper baseplate using DBC Technology (Direct Copper Bonding) UL recognized, file no. E63532 Typical Applications* D C / D C – c o n v e r t e r Brake chopper Switched reluctance motor D C – m o t o r Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =2 5° C 1200 V IC Tj = 150 °C Tc =2 5° C 39 A Tc =8 0° C 27 A ICnom 25 A ICRM ICRM = 2xICnom 50 A VGES -20 ... 20 V tpsc VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj =1 2 5° C 10 µs Tj -55 ... 150 °C Inverse diode IF Tj = 150 °C Tc =2 5° C 47 A Tc =8 0° C 32 A IFnom 40 A IFRM IFRM = 2xIFnom 80 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 410 A Tj -40 ... 150 °C Freewheeling diode IF Tj = 150 °C Tc =2 5° C 47 A Tc =8 0° C 32 A IFnom 40 A IFRM IFRM = 2xIFnom 80 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 410 A Tj -40 ... 150 °C Module It(RMS) Tterminal =8 0° C 100 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =2 5A VGE =1 5V chiplevel Tj =2 5° C 3.20 3.70 V Tj =1 2 5° C 3.60 4.20 V VCE0 chiplevel Tj =2 5° C 1.5 1.75 V Tj =1 2 5° C 1.7 1.95 V rCE VGE =1 5V chiplevel Tj =2 5° C 68.00 78.00 m Tj =1 2 5° C 76.00 90.00 m VGE(th) VGE=VCE, IC = 1 mA 4.5 5.5 6.5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA mA Cies VCE =2 5V VGE =0V f=1M H z 1.65 nF Coes f=1M H z 0.25 nF Cres f=1M H z 0.11 nF QG VGE = - 8 V...+ 20 V 221 nC RGint Tj =2 5° C 0.00
2 Rev. 1 – 05.12.2012 © by SEMIKRON td(on) VCC = 600 V IC =2 5A VGE =± 1 5V RG on =1 6 RG off =1 6 Tj =1 2 5° C 25 ns tr Tj =1 2 5° C 19 ns Eon Tj =1 2 5° C 3.9 mJ td(off) Tj =1 2 5° C 184 ns tf Tj =1 2 5° C 8n s Eoff Tj =1 2 5° C 1.6 mJ Rth(j-c) per IGBT 0.56 K/W Inverse diode VF = VEC IF =4 0A VGE =0V chiplevel Tj =2 5° C 2.13 2.65 V Tj =1 2 5° C 1.94 2.46 V VF0 chiplevel Tj =2 5° C 1.1 1.45 V Tj =1 2 5° C 0.85 1.2 V rF chiplevel Tj =2 5° C 25.7 30.0 m Tj =1 2 5° C 27.1 31.4 m IRRM IF =2 5A VGE =± 1 5V VCC = 600 V Tj =1 2 5° C A Qrr Tj =1 2 5° C µC Err Tj =1 2 5° C mJ Rth(j-c) per diode 1 K/W Freewheeling diode VF = VEC IF =4 0A VGE =0V chiplevel Tj =2 5° C 2.00 2.5 V Tj =1 2 5° C 1.8 2.3 V VF0 chiplevel Tj =2 5° C 1.1 1.45 V Tj =1 2 5° C 1.18 1.2 V rF chiplevel Tj =2 5° C 22.5 30.0 m Tj =1 2 5° C 27.1 31.4 m IRRM IF =2 5A di/dtoff =2 5 0 0A / µ s VGE =± 1 5V VCC = 600 V Tj =1 2 5° C 50 A Qrr Tj =1 2 5° C 4µ C Err Tj =1 2 5° C 1.1 mJ Rth(j-c) per Diode 1 K/W Module LCE 60 nH RCC'+EE' terminal-chip TC =2 5° C m TC =1 2 5° C m Rth(c-s) per module 0.05 K/W Ms to heat sink M6 4 5 Nm Mt Nm Nm w 175 g Characteristics Symbol Conditions min. typ. max. Unit SEMITRANS® 6 GAH IGBT Modules SKM25GAH125D Target Data V CE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Icnom Fast & soft inverse CAL diodes Large clearance (10 mm) and creepage distances (20 mm) Isolated copper baseplate using DBC Technology (Direct Copper Bonding) UL recognized, file no. E63532 Typical Applications* D C / D C – c o n v e r t e r Brake chopper Switched reluctance motor D C – m o t o r
© by SEMIKRON Rev. 1 – 05.12.2012 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
4 Rev. 1 – 05.12.2012 © by SEMIKRON
© by SEMIKRON Rev. 1 – 05.12.2012 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. SEMITRANS 6 GAH