SKM200GB12T4_0906 SEMIKRON | Alldatasheet

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Technical content

Features

  • V CE(sat) with positive temperature coefficient
  • High short circuit capability, self limiting to 6 x Icnom
  • Fast & soft inverse CAL diodes
  • Large clearance (10 mm) and creepage distances (20 mm)
  • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) Typical Applications
  • AC inverter drives
  • U P S
  • Electronic welders at fsw up to 20 kHz Remarks
  • Case temperature limited to T c = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =2 5° C 314 A Tc =8 0° C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =2 5° C 229 A Tc =8 0° C 172 A IFnom 200 A IFRM IFRM = 3xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 990 A Tj -40 ... 175 °C Module It(RMS) 500 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =2 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj =2 5° C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =1 5V Tj =2 5° C 5.0 5.8 m Ω Tj = 150 °C 7.5 8.0 m Ω VGE(th) VGE=VCE, IC =7 . 6m A 5 5 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =2 5V VGE =0V f=1M H z 12.3 nF Coes f=1M H z 0.81 nF Cres f=1M H z 0.69 nF QG VGE =- 8 V . . . + 1 5 V 1130 nC RGint Tj =2 5° C 3.8 Ω td(on) VCC = 600 V IC =2 0 0A VGE =± 1 5V RG on =1 Ω RG off =1 Ω di/dton = 5500 A/µs di/dtoff = 2300 A/µs Tj = 150 °C 185 ns tr Tj = 150 °C 40 ns Eon Tj = 150 °C 21 mJ td(off) Tj = 150 °C 425 ns tf Tj = 150 °C 82 ns Eoff Tj = 150 °C 20 mJ Rth(j-c) per IGBT 0.14 K/W

2 Rev. 2 – 16.06.2009 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =2 0 0A VGE =0V chip Tj =2 5° C 2.2 2.52 V Tj = 150 °C 2.15 2.47 V VF0 Tj =2 5° C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V rF Tj =2 5° C 4.5 5.1 m Ω Tj = 150 °C 6.3 6.8 m Ω IRRM IF =2 0 0A di/dtoff = 4450 A/µs VGE =± 1 5V VCC = 600 V Tj = 150 °C 174 A Qrr Tj = 150 °C 33 µC Err Tj = 150 °C 13 mJ Rth(j-c) per diode 0.26 K/W Module LCE 15 20 nH RCC'+EE' terminal-chip TC =2 5° C 0.25 m Ω TC = 125 °C 0.5 m Ω Rth(c-s) per module 0.02 0.038 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm Nm w 325 g SEMITRANS®3 GB Fast IGBT4 Modules SKM200GB12T4

  • V CE(sat) with positive temperature coefficient
  • High short circuit capability, self limiting to 6 x Icnom
  • Fast & soft inverse CAL diodes
  • Large clearance (10 mm) and creepage distances (20 mm)
  • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) Typical Applications
  • AC inverter drives
  • U P S
  • Electronic welders at fsw up to 20 kHz Remarks
  • Case temperature limited to T c = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°

© by SEMIKRON Rev. 2 – 16.06.2009 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 2 – 16.06.2009 © by SEMIKRON Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge

© by SEMIKRON Rev. 2 – 16.06.2009 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Semitrans 3 GB