SKM200GAL12T4_13 SEMIKRON | Alldatasheet
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IGBT4 = 4. generation fast trench IGBT (Infineon) CAL4 = Soft switching 4. generation CAL-diode Isolated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 20kHz UL recognized, file no. E63532 Typical Applications* Electronic welders at fsw up to 20 kHz D C / D C – c o n v e r t e r Brake chopper Switched reluctance motor Remarks Case temperature limited to Tc = 125°C max. Recommended T op = -40 ... +150°C Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =2 5° C 1200 V IC Tj = 175 °C Tc =2 5° C 313 A Tc =8 0° C 241 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =2 5° C 229 A Tc =8 0° C 172 A IFnom 200 A IFRM IFRM = 3xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 990 A Tj -40 ... 175 °C Freewheeling diode IF Tj = 175 °C Tc =2 5° C 229 A Tc =8 0° C 172 A IFnom 200 A IFRM IFRM = 3xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 990 A Tj -40 ... 175 °C Module It(RMS) Tterminal =8 0° C 500 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =2 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.80 2.05 V Tj =1 5 0° C 2.20 2.40 V VCE0 chiplevel Tj =2 5° C 0.8 0.9 V Tj =1 5 0° C 0.7 0.8 V rCE VGE =1 5V chiplevel Tj =2 5° C 5.00 5.75 m Tj =1 5 0° C 7.50 8.00 m VGE(th) VGE=VCE, IC = 7.6 mA 5 5.8 6.5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 2.7 mA Tj =1 5 0° C mA Cies VCE =2 5V VGE =0V f=1M H z 12.3 nF Coes f=1M H z 0.81 nF Cres f=1M H z 0.69 nF QG VGE = - 8 V...+ 15 V 1130 nC RGint Tj =2 5° C 3.8
2 Rev. 3 – 03.09.2013 © by SEMIKRON td(on) VCC = 600 V IC =2 0 0A VGE =± 1 5V RG on =1 RG off =1 di/dton = 5500 A/µs di/dtoff =2 3 0 0A / µ s Tj =1 5 0° C 185 ns tr Tj =1 5 0° C 40 ns Eon Tj =1 5 0° C 21 mJ td(off) Tj =1 5 0° C 425 ns tf Tj =1 5 0° C 82 ns Eoff Tj =1 5 0° C 20 mJ Rth(j-c) per IGBT 0.14 K/W Inverse diode VF = VEC IF = 200 A VGE =0V chiplevel Tj =2 5° C 2.20 2.52 V Tj =1 5 0° C 2.15 2.47 V VF0 chiplevel Tj =2 5° C 1.3 1.5 V Tj =1 5 0° C 0.9 1.1 V rF chiplevel Tj =2 5° C 4.5 5.1 m Tj =1 5 0° C 6.3 6.8 m IRRM IF = 200 A di/dtoff =4 4 5 0A / µ s VGE =± 1 5V VCC = 600 V Tj =1 5 0° C 174 A Qrr Tj =1 5 0° C 33 µC Err Tj =1 5 0° C 13 mJ Rth(j-c) per diode 0.26 K/W Freewheeling diode VF = VEC IF = 200 A VGE =0V chiplevel Tj =2 5° C 2.20 2.52 V Tj =1 5 0° C 2.15 2.47 V VF0 chiplevel Tj =2 5° C 1.3 1.5 V Tj =1 5 0° C 0.9 1.1 V rF chiplevel Tj =2 5° C 4.5 5.1 m Tj =1 5 0° C 6.3 6.8 m IRRM IF = 200 A di/dtoff =4 4 5 0A / µ s VGE =± 1 5V VCC = 600 V Tj =1 5 0° C 174 A Qrr Tj =1 5 0° C 33.1 µC Err Tj =1 5 0° C 13 mJ Rth(j-c) per Diode 0.26 K/W Module LCE 15 20 nH RCC'+EE' terminal-chip TC =2 5° C 0.25 m TC =1 2 5° C 0.5 m Rth(c-s) per module 0.02 0.038 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm Nm w 325 g Characteristics Symbol Conditions min. typ. max. Unit SEMITRANS® 3 GAL Fast IGBT4 Modules SKM200GAL12T4 IGBT4 = 4. generation fast trench IGBT (Infineon) CAL4 = Soft switching 4. generation CAL-diode Isolated copper baseplate using DBC technology (Direct Bonded Copper) Increased power cycling capability With integrated gate resistor For higher switching frequenzies up to 20kHz UL recognized, file no. E63532 Typical Applications* Electronic welders at fsw up to 20 kHz D C / D C – c o n v e r t e r Brake chopper Switched reluctance motor Remarks Case temperature limited to Tc = 125°C max. Recommended T op = -40 ... +150°C Product reliability results valid for Tj = 150°C
© by SEMIKRON Rev. 3 – 03.09.2013 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
4 Rev. 3 – 03.09.2013 © by SEMIKRON Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
© by SEMIKRON Rev. 3 – 03.09.2013 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. SEMITRANS 3 GAL