SKM50GA123D SEMIKRON | Alldatasheet
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Technical content
Cases D 61... 64 semiTraNs®2 | Section 6: b=2x23mm SEMITRANS® IGBT Modules; New Range 1995/96 ms. 3rd Version: Low Inductance, lower Vcesat, wo, 19 26105 soft and fast CAL diodes"); Preliminary Data * 5 | Type te |Veeu] Pi | Fie [Room Cirout ree i i . @ ele *
2 Tom te_| Tea | IGBT | Modul
— * under development . 2 ‘SKM 50GA123D i200 | 50) 32 | stola4 [0.05 [Dee 3] a a a A ‘SKM 75GA163D |1600 | 75| 3.8 | 600/0.25 |0,05 pee IKE REALE Skuooca reed foo | 100| 32 | e020 Joos lost| te 3] HOHE IUSHS ‘SKM 100 GA 1630 _|1600 | 100| 38 | 625/020 |o0s |ose,* ' ors ish ere Sean Gnies0 fleur | aunt Se fisefone foes ose 4 t ‘SKM300GA 1230 |1200 | 300) 32 |1550]008 0,038 }059 | [at] | ‘SkM300GA 1630 |1600 | 900) 3,8 |1750/007 0,038 |os9 | > $ i ‘8xM300GA 173021700 | 900| 3.8 | 1750/0907 |0,038 |oso* | ‘SKM400GA 1230°|1200 | 400] 3.2 |2500|0,05 |0,098 | 59 o SKM 400GA 163°| 1600 | 400| 3,9 | 2500] 05 |o,038 |p59 . '8KM490GA 173011700 | 400| 3.9 |2500|0.05_ 0,038 |059 Cases D 56... 58 ‘SEMITRANS® 3 * SKM 500 GA 12305|1200 | 520| 3.2 |2700|0,045 |0,038 |D0 Ce2x28mm i Low inductance Lor < 20 nH SKM 75GAL 1230 [1200 | 75 400030 [0,05 |[Ds2 SKM _100GAL 1230/1200 | 100 625]0.20 [0,05 |ps2 Fal ‘SKM 100 GAL 163 D |1600 | 100 625|020 |0,05_|082 .| a aeee ‘SKM 150GAL 123 /1200 | 160] 3.2 | 800/016 [0,038 /D57 Ye 4 ‘SKM 200 GAL 123 D |1200 | 200] 3.2 |1120/0.10 /0,038 |057 Pa 2 Sobel TE | | parseaamaoloey alas peoleas os ost mete ane SKM100.GAR 123D|1200 | 100 625]020 (0,05 |D83 rire SKM 100.GAR 169 [1600 | 100] 338 | e25|020_ 1008 loss + KF, — a ‘SKM 180 GAR 1231200 | 150 200/0.16 [0,038 [se | F I Ae - ‘SKM 200 GAR 123 D 1200 | 200] 32 |1120/0.10 |0.038 |ose 2 sve fh iy ‘SKM 200 GAR 163 |1600 | 200] 3.9 |1120/0.10 |o,038 }psa LBA SKM 50681230 1200 | 60| 32 | 310/04 [005 [Dat 2 a SKM 7581230 1200 | 75| 32 | 400/030 |o05 {ps1 a | SKM 75GB 1630 (1600 | 75| 3,8 | 500|025 |0,05 |e a SKM 75GB173D 1700 | 75| 38 | 800/025 |o.05 |Dst SKM 100681230 1200 | 100| 3.2 | 625/020 |o.05 |pst SKM 10068 1630 |1600 | 100| 39 | 625/020 [0,05 [ps1 7 3} 49 | | SKM100681730°!1700 | 100| a9 | 625/020 |o.0s lost | «_|{ uses D8 GO ay SEMTRANS? 4 | eae me iol oe | Some ms [oe NSE ” — Sku 1g0. 81280 frzo0 |1s0/ 32 | eno|o.6 Jose fos] © KE \\ SKM 150681630 | 1600 | 150| 3.8 | 1000/0.13 |0.098 |os6 \\ , SKM 15068 173D"|1700 | 150| 3,8 | 1000/0.12 Jo,039 |pse | F es SKM 200 GB 1230"| 1200 | 200| 3.2 | 1250/0.10 |0.038 |ps6 dO i km 200 GB 1630 |:600 | 200) 3.9 |1250/0,10 |o.038 [056 —— '8kM200GB 173"|1700 | 200] 3,9 | 1250|0,10 |0,03e |s6 se pee) Ly | = a 6 in Al! —— aa {1 ‘8KM40GD 1230 |1200 | 40) 9,9 | 200/060 j0,05 | ozs, [Fy {Fy 7 oy *aursaniso lem | 7 92 | sofas fous Jom TE TE | i Gea a a= La ? CAL = Controlled Axial Lifetime Technology Lo Loe [me | 2 1600 V and 1700 V IGBTs have Viax = 4 KVine/t min |S | 3 1700 V types will replace 1600 V types in 1996, [ ni ) All data apply to one single IGBT element ® Option enlarged diode, add suffix "1" © Option collector sense, add suttix“S* = case 60