SKM200GAH123DKL MACMIC | Alldatasheet

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August 2011 PRELIMINARY R o H S C o m p l i a n t MacMic Science & Technology Co., Ltd. Version: 1 Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax ：+86-519-85162291 Post Code ：213022 Website ：www.macmicst.com

FEATURES

□ Ultra Low Loss □ High Ruggedness □ High Short Circuit Capability □ V CE(sat) With Positive Temperature Coefficient □ With Fast Free-Wheeling Diodes

APPLICATIONS

□ AC and DC motor control □ AC servo and robot drives □ Power supplies □ Welding inverters ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit IGBT-Inverter VCES Collector - Emitter Voltage T Vj=25°C 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 300 A TC=80°C 200 A ICM Repetitive Peak Collector Current t p=1ms 400 A Ptot Power Dissipation Per IGBT 1040 W Diode-Serial VRRM Repetitive Reverse Voltage T Vj=25°C 1200 V IF(AV) Average Forward Current TC=25°C 300 A TC=80°C 200 A IFRM Repetitive Peak Forward Current t p=1ms 400 A I2t T Vj =45°C, t=10ms, VR=0V 15312 A 2s Reverse-Diode VRRM Repetitive Reverse Voltage T Vj=25°C 1200 V IF(AV) Average Forward Current TC=25°C 45 A TC=80°C 30 A IFRM Repetitive Peak Forward Current t p=1ms 60 A I2t T Vj =45°C, t=10ms, VR=0V 450 A 2s

  • 2 - ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit IGBT-Inverter VGE(th) Gate - Emitter Threshold Voltage V CE=VGE, IC=8mA 5.2 6 7 V VCE(sat) Collector - Emitter Saturation Voltage IC=200A, VGE=15V, TVj=25°C 1.8 V IC=200A, VGE=15V, TVj=125°C 2.0 V ICES Collector Leakage Current VCE=1200V, VGE=0V, TVj=25°C 1 mA VCE=1200V, VGE=0V, TVj=125°C 10 mA IGES Gate Leakage Current V CE=0V,VGE±15V, TVj=125°C -400 400 nA Qge Gate Charge V CE=600V, IC=200A , VGE=±15V 2.1 µC Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 14.9 nF Cres Reverse Transfer Capacitance 0.7 nF td(on) Turn - on Delay Time VCC=600V,IC=200A, RG =5.1Ω, VGE=±15V, Inductive Load TVj =25°C 130 ns TVj =125°C 140 ns tr Rise Time TVj =25°C 65 ns TVj =125°C 65 ns td(off) Turn - off Delay Time VCC=600V,IC=200A, RG =5.1Ω, VGE=±15V, Inductive Load TVj =25°C 430 ns TVj =125°C 500 ns tf Fall Time TVj =25°C 65 ns TVj =125°C 80 ns Eon Turn - on Energy VCC=600V,IC=200A, RG =5.1Ω, VGE=±15V, Inductive Load TVj =25°C 17.2 mJ TVj =125°C 24.8 mJ Eoff Turn - off Energy TVj =25°C 13.6 mJ TVj =125°C 21.6 mJ ISC Short Circuit Current tpsc≤10µS , VGE=15V, TVj=150°C VCC=900V, VCEMCHIP≤1200V 900 A RthJC Junction-to-Case Thermal Resistance （ Per IGBT ） 0.12 K /W Diode-Serial VF Forward Voltage IF=200A , VGE=0V, TVj =25°C 1.95 V IF=200A , VGE=0V, TVj =125°C 1.95 V IRRM Max. Reverse Recovery Current I F=200A , VR=600V diF/dt=-2400A/μs TVj =125°C 155 A Qrr Reverse Recovery Charge 17.5 µC Erec Reverse Recovery Energy 8.5 mJ RthJCD Junction-to-Case Thermal Resistance （ Per Diode ） 0.25 K /W Reverse-Diode VF Forward Voltage IF=30A , VGE=0V, TVj =25°C 1.53 V IF=30A , VGE=0V, TVj =125°C 1.52 V IRRM Max. Reverse Recovery Current I F=30A , VR=600V diF/dt=-1000A/μs，TVj =125°C 60 A Qrr Reverse Recovery Charge 5.5 µC RthJCD Junction-to-Case Thermal Resistance （ Per Diode ） 1.0 K /W
  • 3 - MODULE CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit TVj max Max. Junction Temperature 150 °C TVj op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min 3000 V Md Mounting Torque Recommended （M6） 3 5 N ·m Weight 300 g IC (A) 400 240 160 VCE（V） Figure2. Typical Output characteristics IGBT-Inverter 543 210 6 VCE（V） Figure1. Typical Output characteristics IGBT-Inverter TVj =125°C TVj=25°C VGE=15V IC (A) 400 320 160 320 TVj=125°C VGE（V） Figure3. Typical Transfer characteristics IGBT-Inverter 05 10 20 Eon Eoff (mJ) Eon Eoff RG（Ω） Figure4. Switching Energy vs. Gate Resistor IGBT-Inverter VCC=600V IC=200A VGE=±15V TVj =125°C 240 IC (A) 160 400 TVj =125°C TVj =25°C VCE =20V 131110876 91 2 240 320
  • 4 - 0 50 IC（A） Figure5. Switching Energy vs. Collector Current IGBT-Inverter 400300 Eon

100 Eon Eoff (mJ)

VCC=600V RG=5.1Ω VGE=±15V TVj =125°C Eoff 350100 150 200 250 100 VCE（V） Figure6. Typical Capacitances vs. VCE IGBT-Inverter C (nF) VGE =0V f=1MHz Cies Coes Cres 0 5 10 15 20 25 30 35 Qg（nC） Figure7. Gate Charge characteristics IGBT-Inverter VGE (V) 400 0 800 1200 1600 2000 IC=200A TVj =25°C VCC=600V VCC=800V VF（V） Figure9. Diode Forward Characteristics Diode-Serial 100 200 300

400 IF (A)

TVj =125°C TVj =25°C 3.0 4.02.5 ICpuls (A) TVj=125°C VGE =15V 250 200 150 100 VCE（V） Figure8. Reverse Biased Safe Operating Area IGBT-Inverter 140012001000 800 400 400 600200 300 350Erec (mJ) IF (A) Figure10. Switching Energy vs. IF Diode-Serial 400200 1000 300 RG=5.1Ω VCE=600V TVj =125°C

  • 5 - VF（V） Figure11. Diode Forward Characteristics Reverse-Diode 0.5 01 . 0 1.5 2.0 IF (A) TVj =25°C TVj =125°C 2.5 Rectangular Pulse Duration (seconds) Figure12. Transient Thermal Impedance ZthJC (K/W) 0.001 0.01 0.1 1 10 0.01 0.1 Diode-Serial IGBT-Inverter Figure13. Circuit Diagram
  • 6 - Dimensions (mm) Figure14. Package Outline