SKM150GB12M7 SEMIKRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
© by Semikron Danfoss Rev. 1.0 12.03.2025 1 SEMITRANS® 2 GB IGBT M7 Modules SKM150GB12M7 Features* V CE(sat) with positive temperature coefficient High overload capability Low loss high density IGBT´s Fast & soft switching inverse CAL diodes Large clearance (10 mm) and creepage distances (20 mm) Insulated copper baseplate using DBC Technology (Direct Bonded Copper) UL recognized, file no. E63532 Typical Applications AC inverter drives UPS Electronic welders Remarks Max. case temperature limited to T C = TS = 125 °C Product reliability results are valid for T j = 150 °C (recommended Tj,op = -40...+150 °C) For storage and case temperature with TIM see document: ″Technical Explanations Thermal Interface Materials″ Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj = 25 °C 1200 V IC Tj = 175 °C Tc = 25 °C 220 A Tc = 80 °C 166 A ICnom 150 A ICRM 300 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C 8 µs Tj -40 ... 175 °C Inverse diode VRRM Tj = 25 °C 1200 V IF Tj = 175 °C Tc = 25 °C 182 A Tc = 80 °C 136 A IFRM 300 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A Tj -40 ... 175 °C Module It(RMS) 200 A Tstg module without TIM -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C 1.56 1.88 V Tj = 150 °C 1.80 V VCE0 chiplevel Tj = 25 °C 0.85 1.02 V Tj = 150 °C 0.75 V rCE VGE = 15 V chiplevel Tj = 25 °C 4.7 5.7 m Ω Tj = 150 °C 7.0 m Ω VGE(th) VCE = 10 V, IC = 15 mA 5.4 6 6.6 V ICES VGE = 0 V, V CE = 1200 V, Tj = 25 °C 1.5 mA Cies VCE = 10 V VGE = 0 V f = 1 MHz 30.0 nF Coes f = 1 MHz 0.90 nF Cres f = 1 MHz 0.32 nF QG VGE = -8V ... + 15V 1340 nC RGint Tj = 25 °C 4.0 Ω td(on) VCC = 600 V IC = 150 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω di/dton = 1250 A/µs di/dtoff = 1600 A/µs dv/dt = 5650 V/µs Ls = 25 nH Tj = 150 °C 265 ns tr Tj = 150 °C 77 ns Eon Tj = 150 °C 20 mJ td(off) Tj = 150 °C 310 ns tf Tj = 150 °C 75 ns Eoff Tj = 150 °C 16 mJ Rth(j-c) per IGBT 0.246 K/W Rth(c-s) per IGBT, P12 (reference) 0.066 K/W Rth(c-s) per IGBT, HP-PCM 0.039 K/W
2 Rev. 1.0 12.03.2025 © by Semikron Danfoss SEMITRANS® 2 GB IGBT M7 Modules SKM150GB12M7 Features* V CE(sat) with positive temperature coefficient High overload capability Low loss high density IGBT´s Fast & soft switching inverse CAL diodes Large clearance (10 mm) and creepage distances (20 mm) Insulated copper baseplate using DBC Technology (Direct Bonded Copper) UL recognized, file no. E63532 Typical Applications AC inverter drives UPS Electronic welders Remarks Max. case temperature limited to T C = TS = 125 °C Product reliability results are valid for T j = 150 °C (recommended Tj,op = -40...+150 °C) For storage and case temperature with TIM see document: ″Technical Explanations Thermal Interface Materials″ Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel Tj = 25 °C 2.14 2.46 V Tj = 150 °C 2.07 V VF0 chiplevel Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 V rF chiplevel Tj = 25 °C 5.6 6.4 m Ω Tj = 150 °C 7.8 m Ω IRRM IF = 150 A di/dtoff = 2230 A/µs VGE = -15 V VCC = 600 V Tj = 150 °C 106 A Qrr Tj = 150 °C 22 µC Err Tj = 150 °C 9.4 mJ Rth(j-c) per diode 0.329 K/W Rth(c-s) per diode, P12 (reference) 0.074 K/W Rth(c-s) per diode, HP-PCM 0.046 K/W Module LCE 30 nH RCC'+EE' measured per switch TC = 25 °C 0.55 m Ω TC = 125 °C 0.77 m Ω Rth(c-s)1 calculated without thermal coupling 0.0174 K/W Rth(c-s)2 including thermal coupling, Ts underneath module, P12 (reference) 0.028 K/W Rth(c-s)2 including thermal coupling, Ts underneath module, HP-PCM 0.0170 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M5 2.5 5 Nm - Nm w 160 g
© by Semikron Danfoss Rev. 1.0 12.03.2025 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature Ic = f (Tc) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 100 150 200 250 300 0 1 2 3 4 [V] IC [A] VCE Tj = 25 °C VGE = 15 V Tj = 150 °C VGE = 17 V VGE = 15 V VGE = 11 V 100 150 200 250 300 0 50 100 150 200 [A] TC IC Tj = 175 °C VGE 15 V [°C] Limited by terminals to I DC = 200 A 0 50 100 150 200 250 300 350 [A] [mJ] Eon Eoff Err IC E Tj = 150 °C VCC = 600 V VGE = +15/-15 V RGon = 1 Ω RGoff = 1 Ω 0 2 4 6 8 10 12 [Ω] [mJ] Eon Eoff Err E RG Tj = 150 °C VCC = 600 V VGE = +15/-15 V IC = 150 A 100 150 200 250 300 0 5 10 15 [V] [A] tp = 80 μs VCE = 10 V IC VGE Tj = 150 °C Tj = 25 °C -10 0 400 800 1200 1600 [nC] [V] ICpulse = 150 A Vcc = 600 V VGE QG
4 Rev. 1.0 12.03.2025 © by Semikron Danfoss Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 100 1000 0 80 160 240 320 [A] [ns] td off td on tr tf t IC Tj = 150 °C VCC = 600 V VGE = +15/-15 V RGon = 1 Ω RGoff = 1 Ω 100 1000 0 2 4 6 8 10 12 tr [Ω] t [ns] td off td on tf RG Tj = 150 °C VCC = 600 V VGE = +15/-15 V IC = 150 A 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 single pulse[K/W] [s] Zth(j-c) tP diode IGBT 100 150 200 250 300 0 1 2 3 4 VF [A] [V] IF Tj = 150 °C Tj = 25 °C 120 0 1000 2000 3000 [A] 4.7 2.4 RG [Ω] = 0.5 diF/dt [A/μs] IRR VCC = 600 V Tj = 150 °C VGE = +15/-15 V IF = 150 A 0 1000 2000 3000 [A/μs] [μC] = IF [A] 230 4.7 2.410 1 RG [Ω] = 0.5 300 150 diF/dt Qrr VCC = 600 V Tj = 150 °C VGE = +15/-15 V
© by Semikron Danfoss Rev. 1.0 12.03.2025 5 SEMITRANS 2 GB
6 Rev. 1.0 12.03.2025 © by Semikron Danfoss IMPORTANT INFORMATION AND WARNINGS This is an electrostatic discharge sensitive device (ESDS) according to international standard IEC 61340. *The specifications of Semikron Danfoss products may not be considered as any guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of Semikron Danfoss products describe only the usual characteristics of Semikron Danfoss products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Resulting from this, application adjustments of any kind may be necessary. Any user of Semikron Danfoss products is responsible for the safety of their applications embedding Semikron Danfoss products and must take adequate safety measures to prevent the applications from causing any physical injury, fire or other problem, also if any Semikron Danfoss product becomes faulty. Any user is responsible for making sure that the application design and realization are compliant with all laws, regulations, norms and standards applicable to the scope of application. Unless otherwise explicitly approved by Semikron Danfoss in a written document signed by authorized representatives of Semikron Danfoss, Semikron Danfoss products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Semikron Danfoss does not convey any license under its or a third partys patent rights, copyrights, trade secrets or other intellectual property rights, neither does it make any representation or warranty of non-infringement of intellectual property rights of any third party which may arise from a users applications.