SKM1400GB17R8H1 SEMIKRON | Alldatasheet

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© by SEMIKRON Rev. 1.0 – 20.06.2023 1 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj = 25 °C 1700 V IC Tj = 175 °C Tc = 25 °C 2337 A Tc = 100 °C 1527 A ICnom 1400 A ICRM 2800 A VGES -20 ... 20 V tpsc VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C 10 μs Tj -40 ... 175 °C Inverse diode VRRM Tj = 25 °C 1700 V IF Tj = 175 °C Tc = 25 °C 1874 A Tc = 100 °C 1168 A IFRM 2800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 9024 A Tj -40 ... 175 °C Module It(RMS) 1000 A Tstg -40 ... 150 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC = 1400 A VGE = 15 V chiplevel Tj = 25 °C 1.63 1.95 V Tj = 150 °C 1.96 2.27 V VCE0 chiplevel Tj = 25 °C 1.06 1.12 V Tj = 150 °C 0.95 1.05 V rCE VGE = 15 V chiplevel Tj = 25 °C 0.41 0.59 mΩ Tj = 150 °C 0.72 0.87 mΩ VGE(th) VCE = 10 V, IC = 52.8 mA 5 5.8 6.5 V ICES VGE = 0 V, VCE = 1700 V, Tj = 25 °C 6.0 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 139.2 nF Coes f = 1 MHz 4.80 nF Cres f = 1 MHz 0.43 nF QG VGE = - 15 V / + 15 V 8640 nC RGint Tj = 25 °C 1.7 Ω td(on) VCC= 900 V IC= 1400 A VGE = +15 V/-15 V RGon= 2 Ω RGoff= 2 Ω di/dton= 6.3 kA/µs di/dtoff= 6.3 kA/µs dv/dt = 4500 V/µs LS= 25 nH Tj = 150 °C 775 ns tr Tj = 150 °C 205 ns Eon Tj = 150 °C 830 mJ td(off) Tj = 150 °C 865 ns tf Tj = 150 °C 180 ns Eoff Tj = 150 °C 520 mJ Rth(j-c) per IGBT 0.02 K/W Rth(c-s) per IGBT, (λgrease = 0.81 W/(m*K)) 0.010 K/W Rth(c-s) per IGBT, pre-applied phase change material

0.009 K/W

Features*

  • Symmetrical current sharing
  • Low-inductive module design
  • High mechanical robustness
  • UL recognized, file no. E63532 Typical Applications
  • Motor Drives
  • UPS Systems
  • Solar Inverters Remarks
  • Max. case temperature limited to Tc = Ts = 125 °C
  • Recommended Tj,op = -40...+150 °C
  • IDC ≤ 1000 A for TTerminal = 100 °C GB SEMITRANS® 10

© by SEMIKRON Rev. 1.0 – 20.06.2023 2 Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF = 1400 A VGE = 0 V chiplevel Tj = 25 °C 1.84 2.19 V Tj = 150 °C 1.89 2.25 V VF0 chiplevel Tj = 25 °C 1.32 1.56 V Tj = 150 °C 1.08 1.22 V rF chiplevel Tj = 25 °C 0.37 0.45 mΩ Tj = 150 °C 0.58 0.74 mΩ IRRM IF = 1400 A di/dtoff = 6.4 kA/µs VGE = -15 V VCC = 900 V Tj = 150 °C 925 A Qrr Tj = 150 °C 420 µC Err Tj = 150 °C 208 mJ Rth(j-c) per diode 0.032 K/W Rth(c-s) per diode, (λgrease = 0.81 W/(m*K)) 0.013 K/W Rth(c-s) per diode, pre-applied phase change material

0.011 K/W

RCC'+EE' measured per switch, TC = 25 °C 0.20 mΩ Rth(c-s)1 calculated without thermal coupling (λgrease=0.81 W/(m*K)) 0.0028 K/W Rth(c-s)2 including thermal coupling, Ts underneath module (λgrease=0.81 W/(m*K))

0.005 K/W

Rth(c-s)2 including thermal coupling, Ts underneath module, pre-applied phase change material

0.004 K/W

to terminal M4 1.8 2.1 Nm w 1250 g Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω ±2% K SEMITRANS® 10 IGBT R8 Modules SKM1400GB17R8H1 Features*

  • Symmetrical current sharing
  • Low-inductive module design
  • High mechanical robustness
  • UL recognized, file no. E63532 Typical Applications
  • Motor Drives
  • UPS Systems
  • Solar Inverters Remarks
  • Max. case temperature limited to Tc = Ts = 125 °C
  • Recommended Tj,op = -40...+150 °C
  • IDC ≤ 1000 A for TTerminal = 100 °C GB

© by SEMIKRON Rev. 1.0 – 20.06.2023 3 Fig.1: Output characteristics IGBT (typical); IC = f(VCE); VGE = 15V; (chiplevel) Fig. 2: Output characteristics IGBT (typical); IC = f(VCE); Tj = 150°C; (chiplevel) Fig. 3: Switching losses IGBT (typical); E = f(IC) Fig. 4: Switching losses IGBT (typical); E = f(RG) Fig. 5: Transient thermal impedance IGBT Fig. 6: RBSOA IGBT

© by SEMIKRON Rev. 1.0 – 20.06.2023 4 Fig. 7: Forward characteristics Diode (typical), IF = f(VF); (chiplevel) Fig. 8: Switching losses Diode (typical); E = f(IF) Fig. 9: Switching losses Diode (typical); E = f(RG) Fig. 10: Transient thermal impedance Diode Fig. 11: RBSOA Diode Fig. 12: NTC characteristics (typical)

© by SEMIKRON Rev. 1.0 – 20.06.2023 5 Fig. 13: Typical transfer characteristic Fig. 14: Typical gate charge characteristic

© by SEMIKRON Rev. 1.0 – 20.06.2023 6 SEMITRANS 10 GB

© by SEMIKRON Rev. 1.0 – 20.06.2023 7 This is an electrostatic discharge sensitive device (ESDS) according to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as any guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of SEMIKRON products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Resulting from this, application adjustments of any kind may be necessary. Any user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing any physical injury, fire or other problem, also if any SEMIKRON product becomes faulty. Any user is responsible for making sure that the application design and realization are compliant with all laws, regulations, norms and standards applicable to the scope of application. Unless otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not convey any license under its or a third party’s patent rights, copyrights, trade secrets or other intellectual property rights, neither does it make any representation or warranty of non- infringement of intellectual property rights of any third party which may arise from a user’s applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all previous SEMIKRON information of comparable content and scope. SEMIKRON may update and/or revise this document at any time.