SKM1200GB17E4S2I4 SEMIKRON | Alldatasheet
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© by Semikron Danfoss Rev. 1.0 30.01.2025 1 SEMITRANS® 20 GB IGBT4 Modules SKM1200GB17E4S2I4 Features* Open standard module platform Low losses and high power density Low inductance design Ideal for paralleling and scaling Highest reliability Remarks Case temperature limited to TC = 125°C max. Recommended T j,op = -40 ... +150°C Product reliability results valid for T j = 150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj = 25 °C 1700 V IC Tj = 175 °C Tc = 25 °C 1694 A Tc = 80 °C 1295 A ICnom 1200 A ICRM 2400 A VGES -20 ... 20 V tpsc VCC = 1000 V VGE = ± 15 V VCES ≤ 1700 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode VRRM Tj = 25 °C 1700 V IF Tj = 175 °C Tc = 25 °C 1485 A Tc = 80 °C 1093 A IFRM 2400 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 6240 A Tj -40 ... 175 °C Module It(RMS) 1000 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC = 1200 A VGE = 15 V chiplevel Tj = 25 °C 1.96 2.30 V Tj = 150 °C 2.46 V VCE0 chiplevel Tj = 25 °C 1.02 1.20 V Tj = 150 °C 0.92 V rCE VGE = 15 V chiplevel Tj = 25 °C 0.78 0.92 m Ω Tj = 150 °C 1.28 m Ω VGE(th) VGE=VCE, IC = 48 mA 5.2 5.8 6.4 V ICES VGE = 0 V, V CE = 1700 V, Tj = 25 °C 5 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 93.0 nF Coes f = 1 MHz 3.96 nF Cres f = 1 MHz 3.30 nF QG VGE = - 8 V...+ 15 V 9600 nC RGint Tj = 25 °C 1.0 Ω td(on) VCC = 900 V IC = 1200 A VGE = +15/-15 V RG on = 1.8 Ω RG off = 1 Ω di/dton = 9700 A/µs di/dtoff = 5100 A/µs dv/dt = 3200 V/µs Ls = 25 nH Tj = 150 °C 330 ns tr Tj = 150 °C 111 ns Eon Tj = 150 °C 430 mJ td(off) Tj = 150 °C 979 ns tf Tj = 150 °C 192 ns Eoff Tj = 150 °C 458 mJ Rth(j-c) per IGBT 0.024 K/W Rth(c-s) per IGBT, P12 (reference) 0.020 K/W Rth(c-s) per IGBT, HP-PCM 0.012 K/W
2 Rev. 1.0 30.01.2025 © by Semikron Danfoss SEMITRANS® 20 GB IGBT4 Modules SKM1200GB17E4S2I4 Features* Open standard module platform Low losses and high power density Low inductance design Ideal for paralleling and scaling Highest reliability Remarks Case temperature limited to TC = 125°C max. Recommended T j,op = -40 ... +150°C Product reliability results valid for T j = 150°C Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF = 1200 A VGE = 0 V chiplevel Tj = 25 °C 1.89 2.25 V Tj = 150 °C 1.97 V VF0 chiplevel Tj = 25 °C 1.32 1.56 V Tj = 150 °C 1.08 V rF chiplevel Tj = 25 °C 0.47 0.57 m Ω Tj = 150 °C 0.74 m Ω IRRM IF = 1200 A di/dtoff = 9900 A/µs VGE = -15 V VCC = 900 V Tj = 150 °C 1082 A Qrr Tj = 150 °C 396 µC Err Tj = 150 °C 242 mJ Rth(j-c) per diode 0.04 K/W Rth(c-s) per diode, P12 (reference) 0.020 K/W Rth(c-s) per diode, HP-PCM 0.010 K/W Module LCE Between C1(main) and E2 (main) 10 12 nH RCC'+EE' measured per switch, RC AUX C´ + RE AUX E´ TC = 25 °C 0.3 m Ω TC = 125 °C 0.4 m Ω Rth(c-s)1 per switch 0.005 K/W Rth(c-s)2 including thermal coupling, Ts underneath module, P12 (reference) 0.0082 K/W Rth(c-s) including thermal coupling, Ts underneath module, HP-PCM 0.0045 K/W Ms to heat sink M6 4 6 Nm Mt to terminals M3 0.9 1.1 Nm to terminals M8 9 11 Nm w 1200 g Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 Tc=100°C 493.3 ± 5% Ω B25/100 R(T)=R100*exp[B25/100*(1/T-1/T100)], T[K]; 3480 ± 1% K
© by Semikron Danfoss Rev. 1.0 30.01.2025 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature Ic = f (Tc) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 400 800 1200 1600 2000 2400 0 1 2 3 4 5 [V] IC [A] VCE Tj = 25 °C VGE = 15 V Tj = 150 °C VGE = 17 V VGE = 15 V VGE = 11 V 400 800 1200 1600 2000 2400 0 50 100 150 200 [A] TC IC Tj = 175 °C VGE 15 V [°C] limited by terminals 500 1000 1500 0 600 1200 1800 2400 [A] [mJ] Eon Eoff Err IC E Tj = 150 °C VCC = 900 V VGE = +15/-15 V RGon = 1.8 Ω RGoff = 1.0 Ω 200 400 600 800 1000 0 1 2 3 4 5 6 [Ω] [mJ] Eon Eoff Err E RG Tj = 150 °C VCC = 900 V VGE = +15/-15 V IC = 1200 A 400 800 1200 1600 2000 2400 0 5 10 15 [V] [A] tp = 80 μs VCE = 20 V IC VGE Tj = 150 °C Tj = 25 °C -10 0 3000 6000 9000 12000 [nC] [V] ICpulse = 1200 A Vcc = 900 V VGE QG
4 Rev. 1.0 30.01.2025 © by Semikron Danfoss Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 100 1000 0 600 1200 1800 2400 [A] [ns] td off td on tr tf t IC Tj = 150 °C VCC = 900 V VGE = +15/-15 V RGon = 1.8 Ω RGoff = 1.0 Ω 100 1000 0 2 4 6 tr [Ω] t [ns] td off td on tf RG Tj = 150 °C VCC = 900 V VGE = +15/-15 V IC = 1200 A 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.0001 0.001 0.01 0.1 1 10 single pulse[K/W] [s] Zth(j-c) tP diode IGBT 400 800 1200 1600 2000 2400 0 1 2 3 4 VF [A] [V] IF Tj = 150 °C Tj = 25 °C 500 1000 1500 0 5000 10000 15000 [A] 4.1 5.1 1.8 RG [Ω] = diF/dt [A/μs] IRR VCC = 900 V Tj = 150 °C VGE = +15/-15 V IF = 1200 A 100 200 300 400 500 600 0 4000 8000 12000 16000 [A/μs] [μC] = IF [A] 1800 600 300 4.1 35.1 1.8 RG [Ω] = 2400 1200 diF/dt Qrr VCC = 900 V Tj = 150 °C VGE = +15/-15 V
© by Semikron Danfoss Rev. 1.0 30.01.2025 5 SEMITRANS 20
6 Rev. 1.0 30.01.2025 © by Semikron Danfoss IMPORTANT INFORMATION AND WARNINGS This is an electrostatic discharge sensitive device (ESDS) according to international standard IEC 61340. *The specifications of Semikron Danfoss products may not be considered as any guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of Semikron Danfoss products describe only the usual characteristics of Semikron Danfoss products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Resulting from this, application adjustments of any kind may be necessary. Any user of Semikron Danfoss products is responsible for the safety of their applications embedding Semikron Danfoss products and must take adequate safety measures to prevent the applications from causing any physical injury, fire or other problem, also if any Semikron Danfoss product becomes faulty. Any user is responsible for making sure that the application design and realization are compliant with all laws, regulations, norms and standards applicable to the scope of application. Unless otherwise explicitly approved by Semikron Danfoss in a written document signed by authorized representatives of Semikron Danfoss, Semikron Danfoss products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Semikron Danfoss does not convey any license under its or a third partys patent rights, copyrights, trade secrets or other intellectual property rights, neither does it make any representation or warranty of non-infringement of intellectual property rights of any third party which may arise from a users applications. GB