SKM100GB12T4G_09 SEMIKRON | Alldatasheet

Document overview

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Technical content

Features

  • IGBT4 = 4. Generation (Trench)IGBT
  • VCEsat with positive temperature coefficient
  • High short circuit capability, self limiting to 6 x ICNOM
  • Soft switching 4. Generation CAL diode (CAL4) Typical Applications
  • AC inverter drives
  • U P S
  • Electronic welders at fsw up to 20 kHz Remarks
  • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =2 5° C 154 A Tc =8 0° C 118 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =2 5° C 118 A Tc =8 0° C 89 A IFnom 100 A IFRM IFRM = 3xIFnom 300 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 486 A Tj -40 ... 175 °C Module It(RMS) 500 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =1 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.85 2.1 V Tj = 150 °C 2.2 2.4 V VCE0 Tj =2 5° C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =1 5V Tj =2 5° C 10.5 12.0 m Ω Tj = 150 °C 15.0 16.0 m Ω VGE(th) VGE=VCE, IC =3 . 4m A 5 5 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =2 5V VGE =0V f=1M H z 5.54 nF Coes f=1M H z 0.41 nF Cres f=1M H z 0.32 nF QG VGE =- 8 V . . . + 1 5 V 560 nC RGint Tj =2 5° C 2.0 Ω td(on) VCC = 600 V IC =1 0 0A VGE =± 1 5V RG on =1 Ω RG off =1 Ω di/dton = 3300 A/µs di/dtoff = 1300 A/µs Tj = 150 °C 167 ns tr Tj = 150 °C 37 ns Eon Tj = 150 °C 16.1 mJ td(off) Tj = 150 °C 380 ns tf Tj = 150 °C 78 ns Eoff Tj = 150 °C 8.6 mJ Rth(j-c) per IGBT 0.29 K/W

2 Rev. 0 – 19.02.2009 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =1 0 0A VGE =0V chip Tj =2 5° C 2.22 2.54 V Tj = 150 °C 2.18 2.5 V VF0 Tj =2 5° C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V rF Tj =2 5° C 9.2 10.4 m Ω Tj = 150 °C 12.8 14.0 m Ω IRRM IF =1 0 0A di/dtoff = 1600 A/µs VGE =± 1 5V VCC = 600 V Tj = 150 °C 47 A Qrr Tj = 150 °C 17 µC Err Tj = 150 °C 6m J Rth(j-c) per diode 0.49 K/W Module LCE 15 20 nH RCC'+EE' terminal-chip TC =2 5° C 0.25 m Ω TC = 125 °C 0.5 m Ω Rth(c-s) per module 0.02 0.038 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm Nm w 325 g SEMITRANS®3 GB Fast IGBT4 Modules SKM100GB12T4G

  • IGBT4 = 4. Generation (Trench)IGBT
  • VCEsat with positive temperature coefficient
  • High short circuit capability, self limiting to 6 x ICNOM
  • Soft switching 4. Generation CAL diode (CAL4) Typical Applications
  • AC inverter drives
  • U P S
  • Electronic welders at fsw up to 20 kHz Remarks
  • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°

© by SEMIKRON Rev. 0 – 19.02.2009 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 0 – 19.02.2009 © by SEMIKRON Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge

© by SEMIKRON Rev. 0 – 19.02.2009 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Semitrans 3 GB