SKM100GB125DN_12 SEMIKRON | Alldatasheet

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! " &$' & )*+ , )-+ , Typical Applications* . -+ /0 *++ /0 . -+ /0 GB Absolute Maximum Ratings ( 3 -4 5$ Symbol Conditions Values Units IGBT $ (7 3 *4+ 5$ ( 3 -4 5$ *++ % 3 94 5$ 9+ % $1: $1:3- $ *4+ % 6;2 < -+ 6 6$$ 3 ++ 6= 6;2 > -+ 6= 6$2 ? *-++ 6 (7 3 *-4 5$ *+ @ Inverse Diode ! (7 3 *4+ 5$ ( 3 -4 5$ A4 % 3 9+ 5$ 4 % !1: !1:3- ! *4+ % Module )1:, -++ % (#7 D E+ BBB F *4+ 5$ ( *-4 5$ * B E+++ 6 Characteristics ( 3 -4 5$ Symbol Conditions min. typ. max. Units IGBT ;2), 6;2 3 6$2 $ 3 - % E 4 4 4 6 $2 6;2 3 + 6 *4 + E4 % (7 3 *-4 5$ % 6$2+ (7 3 -4 5$ 6 (7 3 *-4 5$ 6 $2 6;2 3 *4 6 (7 3 -45$ G (7 3 *-45$ G 6$2), $

3 C4 %

6;2 3 *4 6 (7 3 5$ #B H H H 94 6 6$2 3 -4 6;2 3 + 6 3 * :0 + C- + A ! H9 + 4 ! I; 6;2 3 + D F-+6 4+ $ 1; (7 3 5$ 4 J , 9+ 3 9 G 6$$ 3 ++6 E+ $3 C4% A K , 1; 3 9 G (7 3 *-4 5$ H 6;2 3 < *46 -+ H 4 K 1)7D, ;'( + *9 LMN SKM 100GB125DN 1 02-08-2012 DIL © by SEMIKRON

SEMITRANS® 2N Ultra Fast IGBT Module SKM 100GB125DN ! " &$' & )*+ , )-+ , Typical Applications* . -+ /0 *++ /0 . -+ /0 GB Characteristics Symbol Conditions min. typ. max. Units Inverse Diode ! 3 62$ !

3 C4 %= 6;2 3 + 6 (7 3 -4 5$

#B - - 4 6 (7 3 *-4 5$ #B * 9 6 6!+ (7 3 -4 5$ * * * - 6 (7 3 *-4 5$ 6 ! (7 3 -4 5$ *- *C H G (7 3 *-4 5$ G I M 3 9++ %M@ ** 4 @$ 2 6;2 3 + 6= 6$$ 3 ++ 6 E K 1)7D,&

4 LMN

$2 -+ -4 1$$OF22O B D ( 3 -4 5$ + C4 G 3 *-4 5$ * G 1)D, +4 LMN / : H 4 :4 - 4 4 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. SKM 100GB125DN 2 02-08-2012 DIL © by SEMIKRON

SEMITRANS® 2N Ultra Fast IGBT Module SKM 100GB125DN ! " &$' & )*+ , )-+ , Typical Applications* . -+ /0 *++ /0 . -+ /0 GB Zth Symbol Conditions Values Units Zth(j-c)l1 3 * A4 /MN 1 3 - 4 /MN 1 3 H *C 4 /MN 1 3 E - 4 /MN 3 * + +H-C 3 - + ++9

3 H +

++*C

3 E +

++9 Zth(j-c)D1 3 * H++ /MN 1 3 - * + /MN 1 3 H H /MN 1 3 E E /MN 3 * + +4E 3 - + ++* ++*4 3 02-08-2012 DIL © by SEMIKRON

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic SKM 100GB125DN 4 02-08-2012 DIL © by SEMIKRON

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge SKM 100GB125DN 5 02-08-2012 DIL © by SEMIKRON

& AH ;' $ & AH SKM 100GB125DN 6 02-08-2012 DIL © by SEMIKRON