SKM100GAR17E4 SEMIKRON | Alldatasheet

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Technical content

Features

• IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequenzies up to 8kHz • UL recognized, file no. E63532 Typical Applications* • Electronic welders •D C / D C – c o n v e r t e r • Brake chopper • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended T op = -40 ... +150°C • Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =2 5° C 1700 V IC Tj = 175 °C Tc =2 5° C 164 A Tc =8 0° C 127 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V tpsc VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =2 5° C 113 A Tc =8 0° C 83 A IFnom 100 A IFRM IFRM = 2xIFnom 200 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 650 A Tj -40 ... 175 °C Freewheeling diode IF Tj = 175 °C Tc =2 5° C 113 A Tc =8 0° C 83 A IFnom 100 A IFRM IFRM = 2xIFnom 200 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 650 A Tj -40 ... 175 °C Module It(RMS) 200 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =1 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.90 2.20 V Tj =1 5 0° C 2.30 2.60 V VCE0 chiplevel Tj =2 5° C 0.8 0.9 V Tj =1 5 0° C 0.7 0.8 V rCE VGE =1 5V chiplevel Tj =2 5° C 11 13 m Ω Tj =1 5 0° C 16 18 m Ω VGE(th) VGE=VCE, IC = 4 mA 5.2 5.8 6.4 V ICES VGE =0V VCE = 1700 V Tj =2 5° C 1m A Tj =1 5 0° C mA Cies VCE =2 5V VGE =0V f=1M H z 9n F Coes f=1M H z 0.34 nF Cres f=1M H z 0.29 nF QG VGE = - 8 V...+ 15 V 800 nC RGint Tj =2 5° C 7.5 Ω

2 Rev. 2.0 – 24.06.2015 © by SEMIKRON td(on) VCC = 1200 V IC =1 0 0A VGE = +15/-15 V RG on =2 Ω RG off =2 Ω di/dton = 2540 A/µs di/dtoff =6 1 0A / µ s du/dt = 5430 V/µs Tj =1 5 0° C 234 ns tr Tj =1 5 0° C 39 ns Eon Tj =1 5 0° C 43 mJ td(off) Tj =1 5 0° C 657 ns tf Tj =1 5 0° C 136 ns Eoff Tj =1 5 0° C 39 mJ Rth(j-c) per IGBT 0.234 K/W Inverse diode VF = VEC IF = 100 A VGE =0V chiplevel Tj =2 5° C 2.00 2.40 V Tj =1 5 0° C 2.15 2.57 V VF0 chiplevel Tj =2 5° C 1.32 1.56 V Tj =1 5 0° C 1.08 1.22 V rF chiplevel Tj =2 5° C 6.8 8.4 m Ω Tj =1 5 0° C 11 14 m Ω IRRM IF = 100 A di/dtoff =2 3 6 0A / µ s VGE =- 1 5V VCC = 1200 V Tj =1 5 0° C 86 A Qrr Tj =1 5 0° C 34 µC Err Tj =1 5 0° C 26 mJ Rth(j-c) per diode 0.504 K/W Freewheeling diode VF = VEC IF = 100 A VGE =0V chiplevel Tj =2 5° C 2.00 2.40 V Tj =1 5 0° C 2.15 2.57 V VF0 chiplevel Tj =2 5° C 1.32 1.56 V Tj =1 5 0° C 1.08 1.22 V rF chiplevel Tj =2 5° C 6.8 8.4 m Ω Tj =1 5 0° C 10.7 13.5 m Ω IRRM IF = 100 A di/dtoff =2 3 6 0A / µ s VGE =± 1 5V VCC = 1200 V Tj =1 5 0° C 86 A Qrr Tj =1 5 0° C 34 µC Err Tj =1 5 0° C 26 mJ Rth(j-c) per Diode 0.504 K/W Module LCE 30 nH RCC'+EE' terminal-chip TC =2 5° C 0.65 m Ω TC =1 2 5° C 1.09 m Ω Rth(c-s) per module 0.04 0.05 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M5 2.5 5 Nm Nm w 160 g Characteristics Symbol Conditions min. typ. max. Unit SEMITRANS® 2 GAR IGBT4 Modules SKM100GAR17E4 • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequenzies up to 8kHz • UL recognized, file no. E63532 Typical Applications* • Electronic welders •D C / D C – c o n v e r t e r • Brake chopper • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended T op = -40 ... +150°C • Product reliability results valid for Tj = 150°C

© by SEMIKRON Rev. 2.0 – 24.06.2015 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 2.0 – 24.06.2015 © by SEMIKRON Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge

© by SEMIKRON Rev. 2.0 – 24.06.2015 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. SEMITRANS 2 GAR